A Porous Nanostructured ZnO Layer for Ultraviolet Sensing with Quartz Crystal Microbalance Technique.

Porous films of metals and metal oxides have gained growing attention as potential materials for use in applications that require large, specific surface areas, such as sensors, supercapacitors, and batteries. In this study, a "black-metal"-like porous Zn-ZnO composite layer was grown by room temperature co-sputtering of Zn metal and ZnO:Ga (3 at/%) ceramic targets. Following deposition, a porous ZnO layer was obtained by a subsequent thermal annealing process at 400 °C in air. The morphology and structural properties of the obtained porous layered objects were analyzed. The porosity and chemical characteristics of the nanostructured ZnO layer obtained with the method herein described make it suitable to be used as a sensitivity-enhancing active layered element in quartz crystal microbalance (QCM)-based ultraviolet (UV) sensors. The prepared resonant ZnO/QCM sensors under UV radiation exhibited maximum shift up to 35 Hz for several "on-off" UV cycles, excellent response, and recovery times of 11 and 12 s, respectively.

On the Effect of the Co-Introduction of Al and Ga Impurities on the Electrical Performance of Transparent Conductive ZnO-Based Thin Films.

In this study, a set of ZnO-based thin films were prepared on glass substrates at various substrate temperatures via the direct current magnetron sputtering of ceramic targets with the following compositions: pure ZnO, Al-doped ZnO with doping levels of 1 and 2 at.%, Ga-doped ZnO with doping levels of 1 and 2 at.%, and (Al, Ga)-co-doped ZnO with doping levels of 1 and 2 at.% for each impurity metal. The dependencies of sheet resistance, carrier concentration, and Hall mobility on the substrate temperature were studied for the deposited films. The results of evaluating the electrical performances of the films were compared with the data of their XRD study. According to the XRD data, among all the deposited ZnO films, the maximum crystallinity was found in the co-doped thin film with doping levels of 2 at.% for each impurity metal, deposited at a substrate temperature of 300 °C. It was revealed that the observed increase in the Hall mobility and carrier concentration for the co-doped films may, in particular, be due to the difference in the preferred localization of Ga and Al impurities in the ZnO film: the Ga ions were mainly incorporated into the crystal lattice of ZnO nanocrystallites, while the Al impurity was mostly localized in the intercrystalline space at the grain boundaries.