Synthesis and Properties of the Ba2PrWO6 Double Perovskite.

We report details on the synthesis and properties of barium praseodymium tungstate, Ba2PrWO6, a double perovskite that has not been synthesized before. Room-temperature (RT) powder X-ray diffraction identified the most probable space group (SG) as monoclinic I2/m, but it was only slightly distorted from the cubic structure. X-ray photoelectron spectroscopy confirmed that the initial (postsynthesis) material contained praseodymium in both 3+ and 4+ charge states. The former (Pr3+) disappeared after exposure to UV light at RT. Photoluminescence studies of Pr3+ revealed that Ba2PrWO6 is an insulator with a band gap exceeding 4.93 eV. Pressure-dependent Raman spectroscopy excluded the possibility of a phase transition up to 20 GPa; however, measurements between 8 and 873 K signified that there might be a change toward the lower symmetry SG below 200 K. Electron paramagnetic resonance spectra revealed the presence of interstitial oxygen which acts as a deep electron trap.

Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology.

We report on the experimental realization of Pb1-xSnx Te pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability of NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundaries, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.

Density Functional Theory Study of the Spin-Orbit Insulating Phase in SnTe Cubic Nanowires: Implications for Topological Electronics.

We investigate the electronic, structural, and topological properties of the SnTe and PbTe cubic nanowires using ab initio calculations. Using standard and linear-scale density functional theory, we go from the ultrathin limit up to the nanowire thicknesses observed experimentally. Finite-size effects in the ultrathin limit produce an electric quadrupole and associated structural distortions; these distortions increase the band gap, but they get reduced with the size of the nanowires and become less and less relevant. Ultrathin SnTe cubic nanowires are trivial band gap insulators; we demonstrate that by increasing the thickness, there is an electronic transition to a spin-orbit insulating phase due to trivial surface states in the regime of thin nanowires. These trivial surface states with a spin-orbit gap of a few meV appear at the same k-point of the topological surface states. Going to the limit of thick nanowires, we should observe the transition to the topological crystalline insulator phase with the presence of two massive surface Dirac fermions hybridized with the persistent trivial surface states. Therefore, we have the copresence of massive Dirac surface states and trivial surface states close to the Fermi level in the same region of the k-space. According to our estimation, the cubic SnTe nanowires are trivial insulators below the critical thickness tc1 = 10 nm, and they become spin-orbit insulators between tc1 = 10 nm and tc2 = 17 nm, while they transit to the topological phase above the critical thickness of tc2 = 17 nm. These critical thickness values are in the range of typical experimental thicknesses, making the thickness a relevant parameter for the synthesis of topological cubic nanowires. Pb1-xSnxTe nanowires would have both these critical thicknesses tc1 and tc2 at larger values depending on the doping concentration. We discuss the limitations of density functional theory in the context of topological nanowires and the consequences of our results on topological electronics.

Wurtzite vs. rock-salt MnSe epitaxy: electronic and altermagnetic properties.

Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from specific symmetry operation that connects the spin sublattices. In this report, we show with ab initio calculations that semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such a space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.

Electronic Band Structure Changes across the Antiferromagnetic Phase Transition of Exfoliated MnPS3 Flakes Probed by µ-ARPES.

Exfoliated magnetic 2D materials enable versatile tuning of magnetization, e.g., by gating or providing proximity-induced exchange interaction. However, their electronic band structure after exfoliation has not been probed, presumably due to their photochemical sensitivity. Here, we provide micrometer-scale angle-resolved photoelectron spectroscopy of the exfoliated intralayer antiferromagnet MnPS3 above and below the Néel temperature down to one monolayer. Favorable comparison with density functional theory calculations enables identifying the orbital character of the observed bands. Consistently, we find pronounced changes across the Néel temperature for bands consisting of Mn 3d and 3p levels of adjacent S atoms. The deduced orbital mixture indicates that the superexchange is relevant for the magnetic interaction. There are only minor changes between monolayer and thicker films, demonstrating the predominant 2D character of MnPS3. The novel access is transferable to other MPX3 materials (M: transition metal, P: phosphorus, X: chalcogenide), providing several antiferromagnetic arrangements.

Altermagnetic surface states: towards the observation and utilization of altermagnetism in thin films, interfaces and topological materials.

The altermagnetism influences the electronic states allowing the presence of non-relativistic spin-splittings. Since altermagnetic spin-splitting is present along specific k-paths of the 3D Brillouin zone, we expect that the altermagnetic surface stateswill be present on specific surface orientations. We unveil the properties of the altermagnetic surface states considering three representative materials belonging to the orthorhombic, hexagonal and tetragonal space groups. We calculate the 2D projected Brillouin zone from the 3D Brillouin zone. We study the surfaces with their respective 2D Brillouin zones establishing where the spin-splittings with opposite sign merge annihilating the altermagnetic properties and on which surfaces the altermagnetism is preserved. Looking at the three principal surface orientations, we find that for several cases two surfaces are blind to the altermagnetism, while the altermagnetism survives for one surface orientation. Which surface preserves the altermagnetism depends also on themagnetic order. We qualitatively show that an electric field orthogonal to the blind surface can activate the altermagnetism. Our projection method was proven for strong altermagnetism, but it will be equivalently valid for recently discovered weak altermagnetism. Our results predict which surfaces to cleave in order to preserve altermagnetism in surfaces or interfaces and this paves the way to observe non-relativistic altermagnetic spin-splitting in thin films via spin-resolved ARPES and to interface the altermagnetism with other collective modes. We open future perspectives for the study of altermagnetic effects on the trivial and topological surface states.

Pattern Formation by Electric-Field Quench in a Mott Crystal.

The control of the Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca2RuO4 Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field; it is nonvolatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of nonvolatile electronics based on voltage-controlled nanometric phases.

Correlation-Driven Topological Transition in Janus Two-Dimensional Vanadates.

The appearance of intrinsic ferromagnetism in 2D materials opens the possibility of investigating the interplay between magnetism and topology. The magnetic anisotropy energy (MAE) describing the easy axis for magnetization in a particular direction is an important yardstick for nanoscale applications. Here, the first-principles approach is used to investigate the electronic band structures, the strain dependence of MAE in pristine VSi2Z4 (Z = P, As) and its Janus phase VSiGeP2As2 and the evolution of the topology as a function of the Coulomb interaction. In the Janus phase the compound presents a breaking of the mirror symmetry, which is equivalent to having an electric field, and the system can be piezoelectric. It is revealed that all three monolayers exhibit ferromagnetic ground state ordering, which is robust even under biaxial strains. A large value of coupling J is obtained, and this, together with the magnetocrystalline anisotropy, will produce a large critical temperature. We found an out-of-plane (in-plane) magnetization for VSi2P4 (VSi2As4), and an in-plane magnetization for VSiGeP2As2. Furthermore, we observed a correlation-driven topological transition in the Janus VSiGeP2As2. Our analysis of these emerging pristine and Janus-phased magnetic semiconductors opens prospects for studying the interplay between magnetism and topology in two-dimensional materials.

In-gap states and strain-tuned band convergence in layered structure trivalent iridate K0.75Na0.25IrO2.

Iridium oxides (iridates) provide a good platform to study the delicate interplay between spin-orbit coupling (SOC) interactions, electron correlation effects, Hund's coupling and lattice degrees of freedom. An overwhelming number of investigations primarily focus on tetravalent (Ir4+, 5d5) and pentavalent (Ir5+, 5d4) iridates, and far less attention has been paid to iridates with other valence states. Here, we pay our attention to a less-explored trivalent (Ir3+, 5d6) iridate, K0.75Na0.25IrO2, crystallizing in a triangular lattice with edge-sharing IrO6 octahedra and alkali metal ion intercalated [IrO2]- layers, offering a good platform to explore the interplay between different degrees of freedom. We theoretically determine the preferred occupied positions of the alkali metal ions from energetic viewpoints and reproduce the experimentally observed semiconducting behavior and nonmagnetic (NM) properties of K0.75Na0.25IrO2. The SOC interactions play a critical role in the band dispersion, resulting in NM Jeff = 0 states. More intriguingly, our electronic structure not only uncovers the presence of intrinsic in-gap states and nearly free electron character for the conduction band minimum, but also explains the abnormally low activation energy in K0.75Na0.25IrO2. Particularly, the band edge can be effectively modulated by mechanical strain, and the in-gap states feature enhanced band-convergence characteristics by 6% compressive strain, which will greatly enhance the electrical conductivity of K0.75Na0.25IrO2. The present work sheds new light on the unconventional electronic structures of trivalent iridates, indicating their promising application as a nanoelectronic and thermoelectric material, which will attract extensive interest and stimulate experimental works to further understand the unprecedented electronic structures and exploit potential applications of the triangular trivalent iridate.

Mott Insulator Ca2RuO4 under External Electric Field.

We have investigated the structural, electronic and magnetic properties of the Mott insulator Ca2RuO4 under the application of a static external electric field in two regimes: bulk systems at small fields and thin films at large electric fields. Ca2RuO4 presents S- and L-Pbca phases with short and long c lattice constants and with large and small band gaps, respectively. Using density functional perturbation theory, we have calculated the Born effective charges as response functions. Once we break the inversion symmetry by off-centering the Ru atoms, we calculate the piezoelectric properties of the system that suggest an elongation of the system under an electric field. Finally, we investigated a four-unit cell slab in larger electric fields, and we found insulator-metal transitions induced by the electric field. By looking at the local density of states, we have found that the gap gets closed on surface layers while the rest of the sample is insulating. Correlated to the electric-field-driven gap closure, there is an increase in the lattice constant c. Regarding the magnetic properties, we have identified two phase transitions in the magnetic moments with one surface that gets completely demagnetized at the largest field investigated. In all cases, the static electric field increases the lattice constant c and reduces the band gap of Ca2RuO4, playing a role in the competition between the L-phase and the S-phase.

Laser Irradiation Effect on the p-GaSe/n-HfS2 PN-Heterojunction for High-Performance Phototransistors.

Two-dimensional (2D)-based PN-heterojunction revealed a promising future of atomically thin optoelectronics with diverse functionalities in different environments. Herein, we reported a p-GaSe/n-HfS2 van der Waals (vdW) heterostructure for high-performance photodetectors and investigated the laser irradiation effect on the fabricated device. The fabricated 2D vdW heterostructure revealed a high photoresponsivity of 1 × 104 A W-1 with a photocurrent value of 377 nA due to unique type-II band alignment and enhanced surface potential under light illumination, which is further confirmed by density functional theory (DFT) calculations. Before laser irradiation, the device showed high field-effect mobility (µEF) of 26.37 cm2 V-1 s-1, ON/OFF ratio of ∼105, and threshold voltage swing (SS) of ∼463 mV dec-1. With the exposure of 690 mW cm-2 laser power density, µEF reached 204 cm2 V-1 s-1, although ∼2 V ΔVth shifts are observed along with the SS decreased to 175 mV dec-1. Interestingly, the reduced SS shows better channel control of the fabricated device with laser power. Similarly, the ON/OFF ratio decreased to ∼1.29 × 103. The results indicate that the creation of oxide trap charges at the interface of SiO2 and PN-heterojunction layers was observed with voltage biasing and high laser power density. The degradation of electrical parameters is attributed to fewer interface trap charges per surface area of the device rather than direct damage in PN-heterojunction layers. Considering the excellent 2D electronic properties, these materials are better candidates for future high-radiation environments.

Limited Ferromagnetic Interactions in Monolayers of MPS3 (M = Mn and Ni).

We present a systematic study of the electronic and magnetic properties of two-dimensional ordered alloys, consisting of two representative hosts (MnPS3 and NiPS3) of transition metal phosphorus trichalcogenides doped with 3d elements. For both hosts, our DFT + U calculations are able to qualitatively reproduce the ratios and signs of all experimentally observed magnetic couplings. The relative strength of all antiferromagnetic exchange couplings, both in MnPS3 and in NiPS3, can successfully be explained using an effective direct exchange model: it reveals that the third-neighbor exchange dominates in NiPS3 due to the filling of the t2g subshell, whereas for MnPS3, the first-neighbor exchange prevails, owing to the presence of the t2g magnetism. On the other hand, the nearest neighbor ferromagnetic coupling in NiPS3 can only be explained using a more complex superexchange model and is (also) largely triggered by the absence of the t2g magnetism. For the doped systems, the DFT + U calculations revealed that magnetic impurities do not affect the magnetic ordering observed in the pure phases, and thus, in general in these systems, ferromagnetism may not be easily induced by such a kind of elemental doping. However, unlike for the hosts, the first and second (dopant-host) exchange couplings are of similar order of magnitude. This leads to frustration in the case of antiferromagnetic coupling and may be one of the reasons of the observed lower magnetic ordering temperature of the doped systems.

Magnetic Instabilities in the Quasi-One-Dimensional K2Cr3As3 Material with Twisted Triangular Tubes.

The magnetic response of a frustrated K2Cr3As3 sample having triangular arrays of twisted tubes has been studied by means of dc magnetization measurements as a function of the magnetic field (H) at different temperatures ranging from 5 K up to 300 K. Looking at the magnetic hysteresis loops m(H), a diamagnetic behavior of the sample was inferred at temperatures higher than 60 K, whereas at lower temperatures the sample showed a hysteresis loop compatible with the presence of ferrimagnetism. Moreover, spike-like magnetization jumps, both positive and negative, were observed in a narrow range of the magnetic field around 800 Oe, regardless of the temperature considered and they were compared with the theoretical predictions on frustrated systems. The field position of the magnetization jumps was studied at different temperatures, and their distribution can be described by a Lorentzian curve. The analogies between the expected features and the experimental observations suggest that the jumps could be attributed to the magnetic frustration arising from the twisted triangular tubes present in the crystal lattice of this compound.

Dimensionality of the Superconductivity in the Transition Metal Pnictide WP.

We report theoretical and experimental results on the transition metal pnictide WP. The theoretical outcomes based on tight-binding calculations and density functional theory indicate that WP is a three-dimensional superconductor with an anisotropic electronic structure and nonsymmorphic symmetries. On the other hand, magnetoresistance experimental data and the analysis of superconducting fluctuations of the conductivity in external magnetic field indicate a weakly anisotropic three-dimensional superconducting phase.

Electronic properties of TaAs2topological semimetal investigated by transport and ARPES.

We have performed electron transport and angle-resolved photo-emission spectroscopy (ARPES) measurements on single crystals of transition metal dipnictide TaAs2cleaved along the (2¯01) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between magnetic field and the [2¯01] direction. The results indicate elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved (2¯01) surface and it was found that bulk states pockets at constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level (FL) is increased, which is due to a small n-doping of the samples. This shifts the FL closer to the Dirac point, allowing investigating the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.

Interfacial Dzyaloshinskii-Moriya interaction in the epitaxial W/Co/Pt multilayers.

The Dzyaloshinskii-Moriya interaction (DMI) manifesting in asymmetric layered ferromagnetic films gives rise to non-colinear spin structures stabilizing magnetization configurations with nontrivial topology. In this work magnetization reversal, magnetic domain alignment, and strength of DMI are related to the crystalline structure of W/Co/Pt multilayers grown by molecular beam epitaxy. The applied growth method enables the fabrication of layered systems with higher crystalline quality than commonly applied sputtering techniques. A relatively high value of the D coefficient was determined from the aligned magnetic domain stripe structure, substantially exceeding 2 mJ m-2. The highest value of DMI strength Deff = 2.64 mJ m-2 and surface DMI parameter DS = 1.83 pJ m-1 have been observed for a repetition number equal to 10. The experimental results correlate exactly with those obtained from the micromagnetic modelling and density functional theory calculations performed for the well-defined layered stacks. This high value of DMI strength originates from the additive contributions of the interfacial atomic Co layers at the two types of interfaces.

Coupling Lattice Instabilities Across the Interface in Ultrathin Oxide Heterostructures.

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here, we determine the effect of the cubic-tetragonal distortion of SrTiO3 on the electronic properties of thin films of SrIrO3, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, SrIrO3 orthorhombic domains couple directly to tetragonal domains in SrTiO3. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the SrIrO3 film. The close proximity to the metal-insulator transition in ultrathin SrIrO3 causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.

Publisher Correction: Atomic-scale engineering of ferroelectric-ferromagnetic interfaces of epitaxial perovskite films for functional properties.

A correction to this article has been published and is linked from the HTML version of this paper. The error has been fixed in the paper.

A systematic study of 4d and 5d transition metal mediated exchange coupling between Fe and Gd nanolaminates.

We present a systematic study of the magnetic coupling between iron and gadolinium layers intermediated by 4d and 5d transition metals using density functional theory. We demonstrate that it is possible to find a magnetic coupling for most of them. In particular, for the early transition metals (d 1, d 2, d 3 and d 4), a ferromagnetic coupling occurs even stronger than the 3d interlayers. Atomic size and the electronic configuration of the transition metals are crucial for the nature of the coupling. All the open shell transition metals present induced magnetic moments. By increasing the number of interlayers, an oscillating behavior in the magnetic coupling was found and the magnetic coupling goes to zero beyond four spacer layers. Using Monte Carlo simulations, we demonstrate that the interlayer strongly enhances the critical temperature in the Gd layers closest to the interface.