Investigating ripple pattern formation and damage profiles in Si and Ge induced by 100 keV Ar+ ion beam: a comparative study.

Desired modifications of surfaces at the nanoscale may be achieved using energetic ion beams. In the present work, a complete study of self-assembled ripple pattern fabrication on Si and Ge by 100 keV Ar+ ion beam bombardment is discussed. The irradiation was performed in the ion fluence range of ≈3 × 1017 to 9 × 1017 ions/cm2 and at an incident angle of θ ≈ 60° with respect to the surface normal. The investigation focuses on topographical studies of pattern formation using atomic force microscopy, and induced damage profiles inside Si and Ge by Rutherford backscattering spectrometry and transmission electron microscopy. The ripple wavelength was found to scale with ion fluence, and energetic ions created more defects inside Si as compared to that of Ge. Although earlier reports suggested that Ge is resistant to structural changes upon Ar+ ion irradiation, in the present case, a ripple pattern is observed on both Si and Ge. The irradiated Si and Ge targets clearly show visible damage peaks between channel numbers (1000-1100) for Si and (1500-1600) for Ge. The clustering of defects leads to a subsequent increase of the damage peak in irradiated samples (for an ion fluence of ≈9 × 1017 ions/cm2) compared to that in unirradiated samples.

Study of Ion Velocity Effect on the Band Gap of CVD-Grown Few-Layer MoS2.

The present work reports on a simple chemical vapor deposition (CVD) technique that employs alkali halide (NaCl) to synthesize high-quality few-layer MoS2 by reducing growth temperature from 850 to 650 °C, and its ion irradiation study for band gap modification. The Raman peak position difference of A1g to E12g of ≈24.5 cm-1 for the synthesized MoS2 corresponds to a few layers (<5 monolayers) of MoS2 on the substrate, as also confirmed by atomic force microscopy (AFM). The optical image shows the continuous distribution of flakes throughout the substrate and the average area of flakes ≈0.2 µm2 as confirmed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis. Swift heavy-ion (SHI) irradiation at 60, 100, and 150 MeV ion energies of 1 × 1012 ions/cm2 ion fluence have been used to modify the band gap in few-layer MoS2. The ions with two different energies are chosen at two sides of the Bragg peak of energy loss curve in such a way as to have the same value of electronic energy loss (Se) but different ion energies to examine the velocity effect for the ion-induced modification. The absorbance peaks for 60 and 150 MeV irradiated samples show the same effect in the band gap modification.

Evaluating the Impact of Ionization Chamber-Specific Beam Quality Correction Factor in Dosimetry of Filtered and Unfiltered Photon Beams.

Aim: The response of ionization chamber changes when used at beam quality Q which is different from beam quality Qo (usually 60Co) that was used at the time of its calibration. Hence, one needs to apply beam quality correction factor (kQ, Qo) during dosimetric measurements. However, kQ, Qo data are unavailable for novel ion chambers in the literature. Moreover, most of such data do not differentiate between filtered (flat) and unfiltered (unflat) beams. In addition, literature-based data do not differentiate among different pieces of the ion chambers of the same make and model. Hence, the purpose of our study was to determine the ion chamber-specific experimental values of kQ, Qo and to evaluate their impact in dosimetry. Materials and Methods: In this work, the value of kQ, Qo were measured for six ionization chambers of three different types in 6, 10, and 15 MV filtered (with flattening filter [WFF]) as well as 6 and 10 MV unfiltered (flattening filter free [FFF]) photon beams. The measured values of kQ, Qo were compared with Monte Carlo-calculated values available in the literature. The uncertainties in measurement of kQ, Qo values were also evaluated. Results: For 6 MV FFF beam, the measured value of kQ, Qo was found to be consistently lower than 6 MV WFF beam for all Sun Nuclear Corporation ion chambers, while it was higher as per the theoretical data. The inter-chamber variation in kQ, Qo values was observed for the same model of the ion chambers. The maximum difference between absolute dose values on using the theoretical and experimental kQ, Qo values was up to 3.23%. Conclusion: The measured absolute dose values by the ion chamber of a given make and model were found different due to the use of its theoretical and experimental kQ, Qo values. Furthermore, the variation in response of different pieces of ion chambers of the same make and model cannot be accounted for theoretically, and hence, the use of theoretical kQ, Qo data may introduce an inherent error in the estimation of absorbed dose to water. This necessitates the use of measured value of kQ, Qo for each ionization chamber.

Enhancement in thermoelectric properties due to Ag nanoparticles incorporated in Bi2Te3 matrix.

The present study aims to see the enhancement in thermoelectric properties of bismuth telluride (Bi2Te3) annealed at different temperatures (573 and 773 K) through silver (Ag) nano-inclusions (0, 2, 5, 10, 15 and 20 wt %). Transmission electron microscopy (TEM) images of Ag incorporated in Bi2Te3 annealed at 573 K shows tubular, pentagonal, trigonal, circular and hexagonal nanoparticles with sizes of 6-25 nm (for 5 wt % Ag ) and 7-30 nm (for 20 wt % Ag). Ag incorporated in Bi2Te3 annealed at 773 K shows mainly hexagonally shaped structures with particle sizes of 2-20 nm and 40-80 nm (for 5 wt % Ag) and 10-60 nm (for 20 wt % Ag). Interestingly, the samples annealed at 573 K show the highest Seebeck coefficient (S, also called thermopower) at room temperature (p-type behavior) for 5% Ag which is increased ca. five-fold in comparison to Ag-free Bi2Te3, whereas for samples with the same content (5% Ag) annealed at 773 K the increment in thermopower is only about three-fold with a 6.9-fold enhancement of the power factor (S 2σ). The effect of size and shape of the nanoparticles on thermoelectric properties can be understood on the basis of a carrier-filtering effect that results in an increase in thermopower along with a control over the reduction in electrical conductivity to maintain a high power factor yielding a high figure of merit.

Robust water repellent ZnO nanorod array by Swift Heavy Ion Irradiation: Effect of Electronic Excitation Induced Local Chemical State Modification.

Tailoring the surface properties by varying the chemistry and roughness could be of interest for self-cleaning applications. We demonstrate the transformation of hydrophobic ZnO Nano rod (NR) array into superhydrophobic nature by changing the local chemical state and without altering the surface roughness by swift heavy ion (SHI) irradiation. The aligned ZnO NR arrays were irradiated using 150 MeV Ag ions with different fluences from 5E10 to 3E12 ions/cm2. The observed static water contact angles of ZnO NRs samples were 103° ± 3°, 152° ± 4°,161° ± 3°, 164° ± 2°, 167° ± 2°,154 ± 3° and 151° ± 2° for the pristine, ion fluencies of 1E11, 3E11, 5E11, 7E11, 1E12 and 3E12 ions cm-2, respectively. The change in local surface chemistry via formation of surface oxygen related defects due to electronic excitations induced by ion irradiation determine the water dewetting properties. It is found that surface oxygen related defects could be tuned by varying the fluence of the SHIs. Durability tests show that the SHI induced surface oxygen-deficient ZnO NRs have the stable superhydrophobic behavior for more than a year.

Investigations of ripple pattern formation on Germanium surfaces using 100-keV Ar(+) ions.

We have investigated the formation of nanoripples on the surface of germanium, Ge(100), due to the effect of 100-keV Ar (+) ion irradiation. The irradiation was carried out at different incidence angles from 0° to 75° in steps of 15° with respect to the surface normal with a fixed ion fluence of approximately 3 × 10(17) ions/cm(2). Atomic force micrographs show an increase in surface roughness from 0.5 to 4.3 nm for the pristine sample and the sample irradiated at 60° incidence angle due to cos(-1)(θ) dependence on sputtering yield. With increase in angle of incidence, there is transition observed from nanodots to aligned nanodots perpendicular to the direction of the beam. There is an increase in size of the nanostructures observed from 44 to 103 nm with angle of incidence. The formation of nanoripples initiates at an angle of θ ~ 45°. Ripple pattern formation has taken place on the Ge surface in the energy regime of 100 keV as compared to the other reports which had been carried out using very low energy ions. Raman spectra reveal that the near surface of crystalline Ge samples becomes amorphous due to interaction of Ar(+) ions due to creation of defects through collision cascades.

Microstructural and plasmonic modifications in Ag-TiO2 and Au-TiO2 nanocomposites through ion beam irradiation.

The development of new fabrication techniques of plasmonic nanocomposites with specific properties is an ongoing issue in the plasmonic and nanophotonics community. In this paper we report detailed investigations on the modifications of the microstructural and plasmonic properties of metal-titania nanocomposite films induced by swift heavy ions. Au-TiO2 and Ag-TiO2 nanocomposite thin films with varying metal volume fractions were deposited by co-sputtering and were subsequently irradiated by 100 MeV Ag(8+) ions at various ion fluences. The morphology of these nanocomposite thin films before and after ion beam irradiation has been investigated in detail by transmission electron microscopy studies, which showed interesting changes in the titania matrix. Additionally, interesting modifications in the plasmonic absorption behavior for both Au-TiO2 and Ag-TiO2 nanocomposites were observed, which have been discussed in terms of ion beam induced growth of nanoparticles and structural modifications in the titania matrix.

Purification/annealing of graphene with 100-MeV Ag ion irradiation.

Studies on interaction of graphene with radiation are important because of nanolithographic processes in graphene-based electronic devices and for space applications. Since the electronic properties of graphene are highly sensitive to the defects and number of layers in graphene sample, it is desirable to develop tools to engineer these two parameters. We report swift heavy ion (SHI) irradiation-induced annealing and purification effects in graphene films, similar to that observed in our studies on fullerenes and carbon nanotubes (CNTs). Raman studies after irradiation with 100-MeV Ag ions (fluences from 3 × 10(10) to 1 × 10(14) ions/cm(2)) show that the disorder parameter α, defined by I D/I G ratio, decreases at lower fluences but increases at higher fluences beyond 1 × 10(12) ions/cm(2). This indicates that SHI induces annealing effects at lower fluences. We also observe that the number of graphene layers is reduced at fluences higher than 1 × 10(13) ions/cm(2). Using inelastic thermal spike model calculations, we estimate a radius of 2.6 nm for ion track core surrounded by a halo extending up to 11.6 nm. The transient temperature above the melting point in the track core results in damage, whereas lower temperature in the track halo is responsible for annealing. The results suggest that SHI irradiation fluence may be used as one of the tools for defect annealing and manipulation of the number of graphene layers. PACS: 60.80.x; 81.05.ue.

Ion beam-induced shaping of Ni nanoparticles embedded in a silica matrix: from spherical to prolate shape.

Present work reports the elongation of spherical Ni nanoparticles (NPs) parallel to each other, due to bombardment with 120 MeV Au+9 ions at a fluence of 5 × 1013 ions/cm2. The Ni NPs embedded in silica matrix have been prepared by atom beam sputtering technique and subsequent annealing. The elongation of Ni NPs due to interaction with Au+9 ions as investigated by cross-sectional transmission electron microscopy (TEM) shows a strong dependence on initial Ni particle size and is explained on the basis of thermal spike model. Irradiation induces a change from single crystalline nature of spherical particles to polycrystalline nature of elongated particles. Magnetization measurements indicate that changes in coercivity (Hc) and remanence ratio (Mr/Ms) are stronger in the ion beam direction due to the preferential easy axis of elongated particles in the beam direction.