CNT-PUFs: Highly Robust and Heat-Tolerant Carbon-Nanotube-Based Physical Unclonable Functions.

In this work, we explored a highly robust and unique Physical Unclonable Function (PUF) based on the stochastic assembly of single-walled Carbon NanoTubes (CNTs) integrated within a wafer-level technology. Our work demonstrated that the proposed CNT-based PUFs are exceptionally robust with an average fractional intra-device Hamming distance well below 0.01 both at room temperature and under varying temperatures in the range from 23 ∘C to 120 ∘C. We attributed the excellent heat tolerance to comparatively low activation energies of less than 40 meV extracted from an Arrhenius plot. As the number of unstable bits in the examined implementation is extremely low, our devices allow for a lightweight and simple error correction, just by selecting stable cells, thereby diminishing the need for complex error correction. Through a significant number of tests, we demonstrated the capability of novel nanomaterial devices to serve as highly efficient hardware security primitives.

Gate Spacer Investigation for Improving the Speed of High-Frequency Carbon Nanotube-Based Field-Effect Transistors.

Carbon nanotube (CNT)-based field-effect transistors have demonstrated great potential for high-frequency (HF) analog transceiver electronics. Despite significant advancements, one of the remaining challenges is the optimization of the device architecture for obtaining the highest possible speed and linearity. While most studies so far have concentrated on symmetrical top gated FET devices, we report on the impact of the device architecture on their HF performance. Based on a wafer-level nanotechnology platform and device simulations, transistors with a buried gate having different widths and positions in the FET channel have been fabricated. Analysis of several FETs with nonsymmetrical gate electrode location in the channel revealed a speed increase of up to 18% measured by the external transit frequency fT and maximum frequency of oscillation fmax. Although only randomly oriented CNTs with a density of 25 CNTs/µm and 280 nm long channels were used in this study, transit frequencies up to 14 GHz were obtained.

Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube-field-effect transistors.

For an industrial realization of devices based on single-walled carbon nanotube (SWCNTs) such as field-effect transistors (FETs) it becomes increasingly important to consider technological aspects such as intrinsic device structure, integration process controllability as well as yield. From the perspective of a wafer-level integration technology, the influence of SWCNT length on the performance of short-channel CNT-FETs is demonstrated by means of a statistical and comparative study. Therefore, a methodological development of a length separation process based on size-exclusion chromatography was conducted in order to extract well-separated SWCNT dispersions with narrowed length distribution. It could be shown that short SWCNTs adversely affect integrability and reproducibility, underlined by a 25% decline of the integration yield with respect to long SWCNTs. Furthermore, it turns out that the significant changes in electrical performance are directly linked to a SWCNT chain formation in the transistor channel. In particular, CNT-FETs with long SWCNTs outperform reference and short SWCNTs with respect to hole mobility and subthreshold controllability by up to 300% and up to 140%, respectively. As a whole, this study provides a statistical and comparative analysis towards chain-less CNT-FETs fabricated with a wafer-level technology.