Gas phase synthesis and adsorption properties of a 3D ZIF-8 CNT composite.

The metal organic framework structure ZIF-8 has been grown directly on vertically aligned carbon nano tubes (VACNT) by a solid vapour transformation of a ZnO@VACNT composite with gaseous 2-methylimidazole. The ZnO@VACNT composite was synthesised by atomic layer deposition (ALD) using diethylzinc and water as precursors resulting in a homogeneous distribution of crystalline ZnO particles with an average size of 13 nm within the 3D VACNT host structure. The ZnO@VACNT composite was transformed to ZIF-8 by reaction with 2-methyl-imidazole (Hmim) while maintaining the 3D VACNT structure employing a solid vapour transformation reaction. Reaction time and temperature were identified as key parameters to control the generated surface area and the degree of conversion of the nanoscaled ZnO particles. 80 °C and 72 h were found to be sufficient for a complete conversion while longer reaction times result in even higher surface areas of the formed ZIF-8@VACNT composite. Surface areas of up to 1569 m2 g-1 could be achieved. Temperatures below 80 °C led to an incomplete conversion even under longer reaction times of up to 6 weeks. Finally, the CO2 adsorption properties of the ZIF-8@VACNT composite were evaluated. A composite with a 27 w% content of CNTs and a surface area of 1277 m2 g-1 shows an adsorption of 6.05 mmol g-1 CO2 at 30 bar. From the comparison with the pristine materials ZIF-8 and VACNT alone the observed overall CO2 adsorption behaviour of the composite is a combination of the behaviour of the individual components, ZIF-8 and VACNTs. Namely the typical steep rise of the ZIF-8 in the low-pressure regime with a nearly linear steady progression in the medium pressure size regime, the latter typical for VACNTs, proves that the combination of both components leads to enhanced adsorption properties of the ZIF-8@VACNT composite compared to the sole components ZIF-8 and VACNTs.

Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.

Multilayered heterostructures comprising of In2 O3 , SnO2 , and Al2 O3 were studied for their application in thin-film transistors (TFT). The compositional influence of tin oxide on the properties of the thin-film, as well as on the TFT characteristics is investigated. The heterostructures are fabricated by atomic layer deposition (ALD) at 200 °C, employing trimethylindium (TMI), tetrakis(dimethylamino)tin (TDMASn), trimethylaluminum (TMA), and water as precursors. After post-deposition annealing at 400 °C the thin-films are found to be amorphous, however, they show a discrete layer structure of the individual oxides of uniform film thickness and high optical transparency in the visible region. Incorporation of only two monolayers of Al2 O3 in the active semiconducting layer the formation of oxygen vacancies can be effectively suppressed, resulting in an improved semiconducting and switching behavior. The heterostacks comprising of In2 O3 /SnO2 /Al2 O3 are incorporated into TFT devices, exhibiting a saturation field-effect mobility (µsat ) of 2.0 cm2 ⋅ V-1 s-1 , a threshold-voltage (Vth ) of 8.6 V, a high current on/off ratio (IOn /IOff ) of 1.0×107 , and a subthreshold swing (SS) of 485 mV ⋅ dec-1 . The stability of the TFT under illumination is also altered to a significant extent. A change in the transfer characteristic towards conductive behavior is evident when illuminated with light of an energy of 3.1 eV (400 nm).