Fabrication of Substrate-Integrated Waveguide Using Micromachining of Photoetchable Glass Substrate for 5G Millimeter-Wave Applications.

A millimeter-wave substrate-integrated waveguide (SIW) was firstly demonstrated using the micromachining of photoetchable glass (PEG) for 5G applications. A PEG substrate was used as a dielectric material of the SIW, and its photoetchable properties were used to fabricate through glass via (TGV) holes. Instead of the conventional metallic through glass via (TGV) array structures that are typically used for the SIW, two continuous empty TGV holes with metallized sidewalls connecting the top metal layer to the bottom ground plane were used as waveguide walls. The proposed TGV walls were fabricated by using optical exposure, heat development and anisotropic HF (hydrofluoric acid) etching of the PEG substrate, followed by a metal sputtering technique. The SIW was fed by microstrip lines connected to the waveguide through tapered microstrip-to-waveguide transitions. The top metal layer, including these feedlines and transitions, was fabricated by selective metal sputtering through a silicon shadow mask, which was prefabricated by a silicon deep-reactive ion-etching (DRIE) technique. The developed PEG-based process provides a relatively simple, wafer-level manufacturing method to fabricate the SIW in a low-cost glass dielectric substrate, without the formation of individual of TGV holes, complex time-consuming TGV filling processes and repeated photolithographic steps. The fabricated SIW had a dimension of 6 × 10 × 0.42 mm3 and showed an average insertion loss of 2.53 ± 0.55 dB in the Ka-band frequency range from 26.5 GHz to 40 GHz, with a return loss better than 13.86 dB. The proposed process could be used not only for SIW-based devices, but also for various millimeter-wave applications where a glass substrate with TGV structures is required.

Design and Fabrication of Millimeter-Wave Frequency-Tunable Metamaterial Absorber Using MEMS Cantilever Actuators.

In this paper, a MEMS (Micro Electro Mechanical Systems)-based frequency-tunable metamaterial absorber for millimeter-wave application was demonstrated. To achieve the resonant-frequency tunability of the absorber, the unit cell of the proposed metamaterial was designed to be a symmetric split-ring resonator with a stress-induced MEMS cantilever array having initial out-of-plane deflections, and the cantilevers were electrostatically actuated to generate a capacitance change. The dimensional parameters of the absorber were determined via impedance matching using a full electromagnetic simulation. The designed absorber was fabricated on a glass wafer with surface micromachining processes using a photoresist sacrificial layer and the oxygen-plasma-ashing process to release the cantilevers. The performance of the fabricated absorber was experimentally validated using a waveguide measurement setup. The absorption frequency shifted down according to the applied DC (direct current) bias voltage from 28 GHz in the initial off state to 25.5 GHz in the pull-down state with the applied voltage of 15 V. The measured reflection coefficients at those frequencies were -5.68 dB and -33.60 dB, corresponding to the peak absorptivity rates of 72.9 and 99.9%, respectively.

Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures.

A millimeter-wave substrate integrated waveguide (SIW) has been demonstrated using micromachined tungsten-coated through glass silicon via (TGSV) structures. Two-step deep reactive ion etching (DRIE) of silicon vias and selective tungsten coating onto them using a shadow mask are combined with glass reflow techniques to realize a glass substrate with metal-coated TGSVs for millimeter-wave applications. The proposed metal-coated TGSV structures effectively replace the metallic vias in conventional through glass via (TGV) substrates, in which an additional individual glass machining process to form micro holes in the glass substrate as well as a time-consuming metal-filling process are required. This metal-coated TGSV substrate is applied to fabricate a SIW operating at Ka-band as a test vehicle. The fabricated SIW shows an average insertion loss of 0.69 ± 0.18 dB and a return loss better than 10 dB in a frequency range from 20 GHz to 45 GHz.

Thermal Frequency Reconfigurable Electromagnetic Absorber Using Phase Change Material.

In this study, we propose a thermal frequency reconfigurable electromagnetic absorber using germanium telluride (GeTe) phase change material. Thermally-induced phase transition of GeTe from an amorphous high-resistive state to a crystalline low-resistive state by heating is used to change the resonant frequency of the absorber. For full-wave simulation, the electromagnetic properties of GeTe at 25 °C and 250 °C are characterized at 10 GHz under normal incidence for electromagnetic waves. The proposed absorber is designed based on the characterized electromagnetic parameters of GeTe. A circular unit cell is designed and GeTe is placed at a gap in the circle to maximize the switching range. The performance of the proposed electromagnetic absorber is numerically and experimentally demonstrated. Measurement results indicate that the absorption frequency changes from 10.23 GHz to 9.6 GHz when the GeTe film is altered from an amorphous state at room temperature to a crystalline state by heating the sample to 250 °C. The absorptivity in these states is determined to be 91% and 92%, respectively.

Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques.

Mechanical properties of micro/nanoscale structures are needed to design reliable micro/nanoelectromechanical systems (MEMS/NEMS). Micro/nanomechanical characterization of bulk materials of undoped single-crystal silicon and thin films of undoped polysilicon, SiO(2), SiC, Ni-P, and Au have been carried out. Hardness, elastic modulus and scratch resistance of these materials were measured by nanoindentation and microscratching using a nanoindenter. Fracture toughness was measured by indentation using a Vickers indenter. Bending tests were performed on the nanoscale silicon beams, microscale Ni-P and Au beams using a depth-sensing nanoindenter. It is found that the SiC film exhibits higher hardness, elastic modulus and scratch resistance as compared to other materials. In the bending tests, the nanoscale Si beams failed in a brittle manner with a flat fracture surface. The notched Ni-P beam showed linear deformation behavior followed by abrupt failure. The Au beam showed elastic-plastic deformation behavior. FEM simulation can well predict the stress distribution in the beams studied. The nanoindentation, scratch and bending tests used in this study can be satisfactorily used to evaluate the mechanical properties of micro/nanoscale structures for use in MEMS/NEMS.