Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor.

Gate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source-drain dark current increases as the gate bias increases from - 1.0 to + 1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.

High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel.

Flat-type InGaN-based light-emitting diodes (LEDs) without an n-type contact electrode were developed by using a local breakdown conductive channel (LBCC), and the effect of the In content of the InGaN quantum wells (QWs) on the local breakdown phenomenon was investigated. Electroluminescence and X-ray analyses demonstrated that the homogeneity and crystallinity of the InGaN QWs deteriorated as the In content of the InGaN QWs increased, thereby increasing the reverse leakage current and decreasing the breakdown voltage. After reverse breakdown with a reverse current of several mA, an LBCC was formed on the GaN-based LEDs. The surface size and anisotropic shape of the LBCC increased as the indium content of the InGaN QWs in the LEDs increased. Moreover, a flat-type InGaN LED without an n-type electrode was developed by using the LBCC. Notably, the resistance of the LBCC decreased with increasing indium content in the InGaN QWs, leading to lower resistance and higher light emission of the flat-type InGaN-based LEDs without an n-type contact electrode.

Breakdown-induced conductive channel for III-nitride light-emitting devices.

III-nitride semiconductor-based light-emitting diodes (LEDs) have superior physical properties, such as high thermal stability and brightness, for application to solid-state lighting sources. With the commercialization of GaN-based LEDs, improving LED reliability is important because they can be affected by electrostatic discharge, reverse leakage, and breakdown. However, research on the reverse bias characteristics of GaN-based LEDs is insufficient. We studied the reverse breakdown mechanism and demonstrated that a local breakdown can form a conductive channel in GaN-based LEDs, which can be expanded to a novel planar-type LED structure without an n-contact electrode. Furthermore, we found that this approach can be applied to AC-controllable light-emitting devices without any AC-DC converter.

Total intravenous anesthesia in a 10-month-old patient with congenital myotonic dystrophy undergoing endoscopic third ventriculostomy -A case report-.

Myotonic dystrophy is a rare genetic disorder characterized by muscle atrophy and weakness. Surgical treatment of this condition poses various problems for the anesthesiologist. We describe the anesthetic management of a 10-month-old infant with congenital myotonic dystrophy, who was scheduled for endoscopic third ventriculostomy under general anesthesia. Anesthesia was induced with thiopental sodium, fentanyl, and vecuronium, and thereafter maintained via continuous infusion of propofol and remifentanil. The train-of-four ratio was monitored throughout the operation, and muscle relaxation was reversed with pyridostigmine and glycopyrrolate at the end of the procedure. We show that total intravenous anesthesia using propofol and remifentanil is a satisfactory anesthetic technique in very young patients with congenital myotonic dystrophy.

Comparison of the effects of propofol and pentobarbital on hydrogen peroxide-stimulated hepatic SNU761 cells.

BACKGROUND: Propofol and barbiturates are both known to protect cells of several organs against ischemia/reperfusion injury, but there are few reports on any possible protective effects on human hepatocytes. We investigated the activities of both agents on human hepatic SNU761 cells under hydrogen peroxide (H(2)O(2))-induced oxidative stress. METHODS: To determine whether propofol and pentobarbital protect hepatocytes from H(2)O(2)-induced toxicity, we used SNU761 cells, a human hepatocellular carcinoma (HCC) cell line. Cells were pretreated with different dosages (1, 10, 50 microM) of propofol or pentobarbital (1, 10, 50, 100, 400 microM) 30 min before H(2)O(2) application. Lactate dehydrogenase (LDH) was measured to assess and quantify cell death. To determine the nature of cell death, treated hepatocytes were doubly stained with fluorescein isothiocyanate (FITC)-labeled Annexin V and propidium iodide (PI), and analyzed by flow cytometry. RESULTS: Pretreatment with propofol, but not pentobarbital, suppressed H(2)O(2)-induced LDH release. In Annexin V-FITC/PI binding analysis, propofol decreased the number of necrotic and late apoptotic cells, but no significant decreases in such cell numbers were seen when pentobarbital was used. CONCLUSIONS: Unlike pentobarbital, propofol, at clinical concentrations, protected SNU-761 HCC cells against oxidative stress.