Broadband photoresponse data of transparent all-oxide photovoltaics of ZnO/NiO.

In this data article, the properties of all transparent metal oxide of ZnO/NiO heterostructure "Transparent all-oxide photovoltaics and broadband high-speed energy-efficient optoelectronics" [1] are presented by characteristics of ZnO and NiO layers, open circuit voltage decay (OCVD), broadband light with intensity dependent current-voltage plots. The device performances under the effect of various optical excitation of intermediated-band, bound excitonic, free-excitonic and band-to-band are presented. The ZnO/NiO heterostructure direction grown on ITO/glass substrate by large area sputtering method [1] was characterized by UV-visible plots and scanning electron microscope (SEM). Carrier lifetime using OCVD of ZnO/NiO devices with carbon paint metal contact is presented. Prolonged open circuit voltage plots under UV light intensity are shown for stability and repeatability studies. I-V characteristics of ZnO/NiO heterostructure under the light wavelength from 623 nm to 365 nm are presented for energy efficient broadband optoelectronics.

Physical and chemical data of WS2 platelets and thickness-dependent photoresponses.

In this data article, the properties of WS2/ZnO type-I heterostructure which corresponds to the research article "Vertically trigonal WS2 layer embedded heterostructure for enhanced ultraviolet-visible photodetector" (Nguyen et al., 2018) are presented by characteristics of WS2 layer, diode properties, and thickness dependent photoresponses. The device performances under the effect of rapid thermal processing (RTP) is presented. The WS2 platelets grown by large area sputtering method (Nguyen et al., 2018) was characterized in term of morphology and chemical elements distribution by using transmission electron microscope (TEM), energy dispersive spectroscopy (EDS) and X-Ray photoelectron spectroscopy (XPS). Diode characterization of WS2/ZnO like rectifying ratio, ideal factor and barrier height are presented. The variation of photocurrent of ITO/WS2/ZnO/FTO/glass photodetector, its dependence on the WS2 thickness and influence of post- thermal treatment are presented.

Reproducibility analyses of photo-induced pyroelectric photodetector based on vertically grown SnS layers.

The data presented in this article includes the photograph of prepared samples and transient photoresponses for 365 and 850 nm wavelengths at different intensities. The original photographs of the working device made of vertically grown SnS layers on Si substrate are presented from the previous results (Kumar et al., 2017, 2018) [1], [2]. Reproducibility measure of the device were checked for thousands of cycles and presented with estimated parameters such as photo current density and photo+pyro current density. Data after analysis are summarized in the table, to profile the photo and pyro responses quantitatively.