ABSTRACT
Mechanically exfoliated 2D hexagonal boron nitride (h-BN) is currently the preferred dielectric material to interact with graphene and 2D transition metal dichalcogenides in nanoelectronic devices, as they form a clean van der Waals interface. However, h-BN has a low dielectric constant (≈3.9), which in ultrascaled devices results in high leakage current and premature dielectric breakdown. Furthermore, the synthesis of h-BN using scalable methods, such as chemical vapor deposition, requires very high temperatures (>900 °C) , and the resulting h-BN stacks contain abundant few-atoms-wide amorphous regions that decrease its homogeneity and dielectric strength. Here it is shown that ultrathin calcium fluoride (CaF2 ) ionic crystals could be an excellent solution to mitigate these problems. By applying >3000 ramped voltage stresses and several current maps at different locations of the samples via conductive atomic force microscopy, it is statistically demonstrated that ultrathin CaF2 shows much better dielectric performance (i.e., homogeneity, leakage current, and dielectric strength) than SiO2 , TiO2 , and h-BN. The main reason behind this behavior is that the cubic crystalline structure of CaF2 is continuous and free of defects over large regions, which prevents the formation of electrically weak spots.
ABSTRACT
Thin (4-20 nm) yttrium iron garnet (Y3Fe5O12, YIG) layers have been grown on gadolinium gallium garnet (Gd3Ga5O12, GGG) 111-oriented substrates by laser molecular beam epitaxy in 700-1000 °C growth temperature range. The layers were found to have atomically flat step-and-terrace surface morphology with step height of 1.8 Å characteristic for YIG(111) surface. As the growth temperature is increased from 700 to 1000 °C the terraces become wider and the growth gradually changes from layer by layer to step-flow regime. Crystal structure studied by electron and X-ray diffraction showed that YIG lattice is co-oriented and laterally pseudomorphic to GGG with small rhombohedral distortion present perpendicular to the surface. Measurements of magnetic moment, magneto-optical polar and longitudinal Kerr effect (MOKE), and X-ray magnetic circular dichroism (XMCD) were used for study of magnetization reversal for different orientations of magnetic field. These methods and ferromagnetic resonance studies have shown that in zero magnetic field magnetization lies in the film plane due to both shape and induced anisotropies. Vectorial MOKE studies have revealed the presence of an in-plane easy magnetization axis. In-plane magnetization reversal was shown to occur through combination of reversible rotation and abrupt irreversible magnetization jump, the latter caused by domain wall nucleation and propagation. The field at which the flip takes place depends on the angle between the applied magnetic field and the easy magnetization axis and can be described by the modified Stoner-Wohlfarth model taking into account magnetic field dependence of the domain wall energy. Magnetization curves of individual tetrahedral and octahedral magnetic Fe3+ sublattices were studied by XMCD.
ABSTRACT
LaF3/SrF2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been measured using impedance spectroscopy in the frequency range 10-1-106 Hz and a temperature range 300-570 K. The ionic DC conductivities have been determined from Nyquist impedance diagrams and activation energies from the Arrhenius-Frenkel equation. An increase of the DC conductivity has been observed to accompany decreased layer thickness for various thicknesses as small as 25 nm. The greatest conductivity has been shown for a multilayer heterostructure having thicknesses of 25 nm per layer. The structure has a conductivity two orders of magnitude greater than pure LaF3 bulk material. The increasing conductivity can be understood as a redistribution of charge carriers through the interface due to differing chemical potentials of the materials, by strong lattice-constant mismatch, and/or by formation of a solid La1-xSrxF3-x solution at the interface during the growth process.
