ABSTRACT
A thermoelectric generator (TEG) is one of the important energy harvesting sources for wearable electronic devices, which converts waste heat into electrical energy without any external stimuli, such as light or mechanical motion. However, the poor flexibility of traditional TEGs (e.g., Si-based TE devices) causes the limitations in practical applications. Flexible paper substrates are becoming increasingly attractive in wearable electronic technology owing to their usability, environmental friendliness (disposable, biodegradable, and renewable materials), and foldability. The high water-absorbing quality of paper restricts its scope of application due to water failure. Therefore, we propose a high-performance flexible waterproof paper-based thermoelectric generator (WPTEG). A modification method that infiltrates TE materials into cellulose paper through vacuum filtration is used to prepare the TE modules. By connecting the TE-modified paper with Al tape, as well as a superhydrophobic layer encapsulation, the WPTEG is fabricated. The WPTEG with three P-N modules can generate an output voltage of up to 235 mV at a temperature difference of 50 K, which can provide power to portable electronic devices such as diodes, clocks, and calculators in hot water. With the waterproof property, the WPTEG paves the way for achieving multi-scenario applications in humid environments on human skin.
ABSTRACT
In this paper, a new GaSe/ZnS van der Waals heterostructure (vdWH) was constructed and a systematic analysis of the electronic structure, interfacial properties, and transport and photocatalytic capacity of the GaSe/ZnS vdWH was performed by using first-principles calculations. It was found that the heterostructure exhibited excellent photocatalytic performance for water splitting. The direct band gap of the heterostructure calculated using the hybrid HSE06 functional was 2.19 eV, which had a good visible light absorption ability. The electronic structure of the type-II band arrangement effectively reduced the recombination of electron-hole pairs. The heterostructure also showed excellent transport ability, and the carrier mobility of electrons and holes along different directions was greatly improved. Additionally, as the electric field strength increased, the band gap width of the GaSe/ZnS vdWH narrowed and the heterostructure characteristics transitioned from semiconductor to metal properties, which were attributed to the appearance of near-free electronic (NFE) states induced by the strong electric field. Meanwhile, the optical absorption capacity of the heterostructure was greatly improved compared to the ZnS monolayer, reaching 1.44 × 105 cm-1 at an incident photon energy of 8.65 eV. Therefore, the GaSe/ZnS vdWH was proved to be an excellent photocatalytic material for water splitting in the present study.
ABSTRACT
The interest in the field electron emission cathode nanomaterials is on the rise due to the wide applications, such as electron sources, miniature X-ray devices, display materials, etc. In particular, nanodiamond (ND) film is regarded as an ideal next-generation cathode emitter in the field emission devices, due to the low or negative electron affinity, small grain size, high mechanical hardness, low work function, and high reliability. Increasing efforts are conducted on the investigation of the emission structures, manufacturing cost, and field emission properties improvement of the ND films. This review aims to summarize the recent research, highlight the new findings, and provide a roadmap for future developments in the area of ND film electron field emitter. Specially, the optimizing methods of large-scale, high-quality, and cost-effective synthesis of ND films are discussed to achieve more stable surface structure and optimal physical properties. Additionally, the mainstream strategies applied to produce high field emission performance of ND films are analyzed in detail, including regulating the grain size/boundary, hybrid phase carbon content, and doping element/type of ND films; meanwhile, the problems existing in the related research and the outlook in this area are also discussed.
ABSTRACT
This paper presents a high-performance micro-electromechanical systems (MEMS) thermopile infrared detector. It consists of a double-end beam and a dual-layer thermocouple structure, which improves the responsivity of the detector. The etch-stop structure is integrated into the detector to prevent isotropic etching-caused damage on the device. The responsivity of the detector achieved 1151.14 V/W, and the measured response time was 14.46 ms. The detector had the potential to work as a high-precision temperature sensor and as a vacuum sensor.
