Directional Polarized Light Emission from Thin-Film Light-Emitting Diodes.

Light-emitting diodes (LEDs) with directional and polarized light emission have many photonic applications, and beam shaping of these devices is fundamentally challenging because they are Lambertian light sources. In this work, using organic and perovskite LEDs (PeLEDs) for demonstrations, by selectively diffracting the transverse electric (TE) waveguide mode while suppressing other optical modes in a nanostructured LED, the authors first demonstrate highly directional light emission from a full-area organic LED with a small divergence angle less than 3° and a TE to transverse magnetic (TM) polarization extinction ratio of 13. The highly selective diffraction of only the TE waveguide mode is possible due to the planarization of the device stack by thermal evaporation and solution processing. Using this strategy, directional and polarized emission from a perovskite LED having a current efficiency 2.6 times compared to the reference planar device is further demonstrated. This large enhancement in efficiency in the PeLED is attributed to a larger contribution from the TE waveguide mode resulting from the high refractive index in perovskite materials.

Recovering cavity effects in corrugated organic light emitting diodes.

Cavity effects play an important role in determining the out-coupling efficiency of an OLED. By fabricating OLEDs on corrugated substrates, the waveguide and SPP modes can be extracted by diffraction. However, corrugation does not always lead to an enhancement in out-coupling efficiency due to the reduction of the electrode reflectance and hence the cavity effects. Based on the results of our rigorous couple-wave analysis (RCWA) simulation, we found that the cavity effects can be partially recovered using a low index Teflon layer inserted between the ITO anode and the substrate due to the enhancement of the reflectance of the corrugated electrodes. To verify the simulation results, we fabricated corrugated OLEDs having a low-index Teflon interlayer with an EQE of 36%, which is 29% higher than an optimized planar OLED. By experimentally measuring the OLED air mode dispersion, we confirm the cavity emission of a corrugated OLED is enhanced by the low index layer.

Direct Acoustic Imaging Using a Piezoelectric Organic Light-Emitting Diode.

Conventional ultrasonic imaging requires acoustic scanning over a target object using a piezoelectric transducer array, followed by signal processing to reconstruct the image. Here, we report a novel ultrasonic imaging device that can optically display an acoustic signal on the surface of a piezoelectric transducer. By fabricating an organic light-emitting diode (OLED) on top of a piezoelectric crystal, lead zirconate titanate (PZT), an acousto-optical piezoelectric OLED (p-OLED) transducer is realized, converting an acoustic wave profile directly to an optical image. Because of the integrated device architecture, the resulting p-OLED features a high acousto-optic conversion efficiency at the resonance frequency, providing a piezoelectric field to drive the OLED. By incorporating an electrode array in the p-OLED, we demonstrate a novel tomographic ultrasound imaging device that is operated without a need for conventional signal processing.

Long-Wavelength Lead Sulfide Quantum Dots Sensing up to 2600 nm for Short-Wavelength Infrared Photodetectors.

Lead sulfide nanoparticles (PbS NPs) are used in the short-wavelength infrared photodetectors because of their excellent photosensitivity, band gap tunability, and solution processability. It has been a challenge to synthesize high-quality PbS NPs with an absorption peak beyond 2000 nm. In this work, using PbS seed crystals with an absorption peak at 1960 nm, we report a successful synthesis of very large monodispersed PbS NPs having a diameter up to 16 nm by multiple injections. The resulting NPs have an absorption peak over 2500 nm with a small full width at half-maximum of 24 meV. To demonstrate the applications of such large quantum dots (QDs), broadband heterojunction photodetectors are fabricated with the large PbS QDs of an absorption peak at 2100 nm. The resulting devices have an external quantum efficiency (EQE) of 25% (over 50% internal quantum efficiency) at 2100 nm corresponding to a responsivity of 0.385 A/W and an EQE of ∼60% in the visible range.

Alternative Patterning Process for Realization of Large-Area, Full-Color, Active Quantum Dot Display.

Although various colloidal quantum dot (QD) coating and patterning techniques have been developed to meet the demands in optoelectronic applications over the past years, each of the previously demonstrated methods has one or more limitations and trade-offs in forming multicolor, high-resolution, or large-area patterns of QDs. In this study, we present an alternative QD patterning technique using conventional photolithography combined with charge-assisted layer-by-layer (LbL) assembly to solve the trade-offs of the traditional patterning processes. From our demonstrations, we show repeatable QD patterning process that allows multicolor QD patterns in both large-area and microscale. Also, we show that the QD patterns are robust against additional photolithography processes and that the thickness of the QD patterns can be controlled at each position. To validate that this process can be applied to actual device applications as an active material, we have fabricated inverted, differently colored, active QD light-emitting device (QD-LED) on a pixelated substrate, which achieved maximum electroluminescence intensity of 23 770 cd/m2, and discussed the results. From our findings, we believe that our process provides a solution to achieving both high-resolution and large-scale QD pattern applicable to not only display, but also to practical photonic device research and development.

Perovskite Solar Cells on Corrugated Substrates with Enhanced Efficiency.

Organometallic halide perovskites solar cells are fabricated on nano-scaled corrugated substrates using a sequential deposition method. The corrugated substrates are fabricated using colloidal lithography followed by reactive ion etching. The corrugated structure is found to accelerate the chemical reaction between the sequentially deposited lead iodide (PbI2 ) and methyl ammonium iodide layers to form stoichiometric perovskite films, and the corrugated morphology is preserved at the interface of the hole transport layer (HTL) and the perovskite layer. The shunt resistance of the corrugated devices is found to be higher than that of the planar devices, leading to a higher open circuit voltage (VOC ) and fill factor (FF) in the corrugated devices. Finite-difference time-domain simulation is carried out on both planar and corrugated devices. The results revealed that light absorption is enhanced in the corrugated devices due to the corrugated HTL/perovskite interface, resulting in a significantly higher short circuit current (JSC ) observed in the corrugated devices. As a result, the average power conversion efficiency increases from 8.7% for the planar devices to 13% for the corrugated devices.

Monitoring of the Binding Between EGFR Protein and EGFR Aptamer Using In-Situ Total Internal Reflection Ellipsometry.

The epidermal growth factor receptor (EGFR) protein has received significant attention in medical biotechnology because it is an important component in cell growth and division. We report the results of a study on the binding between the EGFR protein and the associated aptamer, measured in real time. Aptamers can be used for clinical purposes including macromolecular medicine and basic research. In particular, EGFR aptamers are promising molecular agents for targeting cancer. The data were obtained in-situ with total internal reflection ellipsometry (TIRE), which combines the analytic capability of spectroscopic ellipsometry with the high surface sensitivity of surface plasmon resonance measurements. Our results show that TIRE can be used to determine adsorption of nanoscale biomolecules. Our results are supported by additional data obtained by liquid atomic-force-microscopy.

Lithography-Free Broadband Ultrathin-Film Absorbers with Gap-Plasmon Resonance for Organic Photovoltaics.

Strategies to confine electromagnetic field within ultrathin film emerge as essential technologies for applications from thin-film solar cells to imaging and sensing devices. We demonstrate a lithography-free, low-cost, large-scale method to realize broadband ultrathi-film metal-dielectric-metal (MDM) absorbers, by exploiting gap-plasmon resonances for strongly confined electromagnetic field. A two-steps method, first organizing Au nanoparticles via thermal dewetting and then transferring the nanoparticles to a spacer-reflector substrate, is used to achieve broader absorption bandwidth by manipulating geometric shapes of the top metallic layer into hemiellipsoids. A fast-deposited nominal Au film, instead of a conventional slow one, is employed in the Ostwald ripening process to attain hemiellipsoidal nanoparticles. A polymer supported transferring step allows a wider range of dewetting temperature to manipulate the nanoparticles' shape. By incorporating circularity with ImageJ software, the geometries of hemiellipsoidal nanoparticles are quantitatively characterized. Controlling the top geometry of MDM structure from hemisphere to hemiellipsoid increases the average absorption at 500-900 nm from 23.1% to 43.5% in the ultrathin film and full width at half-maximum of 132-324 nm, which is consistently explained by finite-difference time-domain simulation. The structural advantages of our scheme are easily applicable to thin-film photovoltaic devices because metal electrodes can act as metal reflectors and semiconductor layers as dielectric spacers.

Blue inorganic light emitting diode on flexible polyimide substrate using laser lift-off process.

The fabrication process for the blue GaN inorganic light emitting diode (ILED) on flexible polyimide (PI) substrate by laser lift off (LLO) method was demonstrated. The GaN epi-structure was grown on patterned sapphire wafer. GaN samples were temporary bonded with polyimide substrate by flexible silver epoxy. Separation of the whole GaN LED film from GaN/sapphire wafer was accomplished using a single KrF excimer (248 nm) laser pulse directed through the transparent sapphire wafer. Device fabrication was carried out on both rigid silicon and flexible polyimide substrate, and I-V performance for both devices was measured. The optimized LLO process for the whole GaN LED film transfer would be applicable in flexible LED applications without compromising electrical properties.

Investigation of the dielectric function of solution-processed InGaZnO films using ellipsometry.

The optical properties of InGaZnO (IGZO) films grown through the sol-gel process as a function of sintering time were investigated with spectroscopic ellipsometry (SE). The IGZO precursor sol was prepared by mixing In nitrate, Ga nitrate, and Zn acetate at a molar ratio of In:Ga:Zn = 3:1:1. The solution was deposited on a SiO2/Si substrate via spin coating. Sintering was performed at 400 degrees C for 1-15 h in an ambient atmosphere. The optical properties were measured over the range 1.12-6.52 eV via variable angle SE, at room temperature. The angle of incidence was varied from 50 to 70 degrees in 5 degree steps. To extract the pure optical properties of IGZO, multilayer-structure calculation with Tauc-Lorentz dispersion relation for IGZO was performed. The changes in the dielectric function of the IGZO films with varying sintering time were observed. The resultant optical properties can be related to the concentration of oxygen vacancies in the material, which can be controlled by the sintering time.