Improving sample preheating capabilities for dynamic loading on high-pulsed power drivers.

The CEA operates several High-Pulsed Power (HPP) drivers for dynamic loading experiments. The aim of these experiments is to provide quantitative information about the response of various materials of interest, mainly under quasi-isentropic compression. In order to improve our ability to explore these materials' behavior over a wide range of thermodynamic paths and starting from various non-ambient conditions, we developed a device capable of pre-heating both metallic and nonmetallic samples up to several hundred degrees prior to loading. This device is based on conductive heating and on a configuration that allows homogeneous heating with unprecedented temperature stability on our HPP platforms. Moreover, it is designed to allow efficient sample heating, within extremely severe electromagnetic environments associated with such platforms. The main features of this preheating device, whose design was guided by extensive thermal simulations, are presented, along with various technical solutions that enabled its insertion in a reliable experimental configuration on our HPP drivers. The results obtained from preliminary experiments on a composite material (carbon fibers embedded in epoxy resin) and on a high purity copper sample preheated to 323 K and 573 K, respectively, are presented. The performance and robustness of this heating device are potentially valuable for extending the range of studies in dynamic loading experiments for various materials under ramp compression using HPP drivers.

Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers.

We report on a passively mode-locked InP/InGaAsP multiple quantum well semiconductor ring laser that operates at a 20 GHz repetition rate and around 1575 nm wavelength. The device has been realized using the active-passive integration technology in a standardized photonic integration platform. We demonstrate experimentally for the first time to our knowledge that the relative positioning of the amplifier and absorber in a monolithically integrated ring laser can be used to control the balance of power between counterpropagating fields in the mode-locked state. The directional power balance is verified to be in agreement with a model previously reported.

High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power.

High-power ultrafast lasers are important for numerous industrial and scientific applications. Current multi-watt systems, however, are based on relatively complex laser concepts, for example using additional intracavity elements for pulse formation. Moving towards a higher level of integration would reduce complexity, packaging, and manufacturing cost, which are important requirements for mass production. Semiconductor lasers are well established for such applications, and optically-pumped vertical external cavity surface emitting lasers (VECSELs) are most promising for higher power applications, generating the highest power in fundamental transverse mode (>20 W) to date. Ultrashort pulses have been demonstrated using passive modelocking with a semiconductor saturable absorber mirror (SESAM), achieving for example 2.1-W average power, sub-100-fs pulse duration, and 50-GHz pulse repetition rate. Previously the integration of both the gain and absorber elements into a single wafer was demonstrated with the MIXSEL (modelocked integrated external-cavity surface emitting laser) but with limited average output power (<200 mW). We have demonstrated the power scaling concept of the MIXSEL using optimized quantum dot saturable absorbers in an antiresonant structure design combined with an improved thermal management by wafer removal and mounting of the 8-µm thick MIXSEL structure directly onto a CVD-diamond heat spreader. The simple straight cavity with only two components has generated 28-ps pulses at 2.5-GHz repetition rate and an average output power of 6.4 W, which is higher than for any other modelocked semiconductor laser.

Growth parameter optimization for fast quantum dot SESAMs.

Semiconductor saturable absorber mirrors (SESAMs) using quantum dot (QD) absorbers exhibit a larger design freedom than standard quantum well absorbers. The additional parameter of the dot density in combination with the field enhancement allows for an independent control of saturation fluence and modulation depth. We present the first detailed study of the effect of QD growth parameters and post growth annealing on the macroscopic optical SESAM parameters, measuring both nonlinear reflectivity and recombination dynamics. We studied a set of self-assembled InAs QD-SESAMs optimized for an operation wavelength around 960 nm with varying dot density and growth temperature. We confirm that the modulation depth is controlled by the dot density. We present design guidelines for QD-SESAMs with low saturation fluence and fast recovery, which are for example important for modelocking of vertical external cavity surface emitting lasers (VECSELs).

New role for nonlinear dynamics and chaos in integrated semiconductor laser technology.

Using an integrated colliding-pulse mode-locked semiconductor laser, we demonstrate the existence of nonlinear dynamics and chaos in photonic integrated circuits (PICs) by demonstrating a period-doubling transition into chaos. Unlike their stand-alone counterparts, the dynamics of PICs are more stable over the lifetime of the system, reproducible from batch to batch and on faster time scales due to the small sizes of PICs.

Gain measurements of Fabry-Perot InP/InGaAsP lasers using an ultrahigh-resolution spectrometer.

Measurements of the optical gain in a semiconductor laser using a 20 MHz resolution optical spectrum analyzer are presented for what is believed to be the first time. The high resolution allows for accurate gain measurements close to the lasing threshold. This is demonstrated by gain measurements on a bulk InGaAsP 1.5 microm Fabry-Perot laser. Combined with direct measurement of transparency carrier density values, parameters were determined for characterizing the gain at a range of wavelengths and temperatures. The necessity of the use of a logarithmic gain model is shown.