ABSTRACT
We demonstrate surface enhanced infrared absorption spectroscopy using 1-dimensional highly doped semiconductors based on Si-doped InAsSb plasmonic nano-antennas. Engineering the plasmonic array to support the localized surface plasmon resonance aligned with the molecular vibrational absorption mode of interest involves finely setting the doping level and nano-antenna width. Heavily doped nano-antennas require a wider size compared to lightly doped resonators. Increasing the doping level, and consequently the width of the nano-antenna, enhances the vibrational absorption of a ~15 nm thick organic layer up to 2 orders of magnitude compared to the unstructured sample and therefore improves sensing. These results pave the way towards molecule fingerprint sensor manufacturing by tailoring the plasmonic resonators to get a maximum surface enhanced infrared absorption at the target vibrational mode.
ABSTRACT
We report a detailed analysis of the influence of the doping level and nanoribbon width on the localized surface plasmon resonance (LSPR) by means of reflectance measurements. The plasmonic system, based on one-dimensional periodic gratings of highly Si-doped InAsSb/GaSb semiconductor nanostructures, is fabricated by a simple, accurate and large-area technique fabrication. Increasing the doping level blueshifts the resonance peak while increasing the ribbon width results in a redshift, as confirmed by numerical simulations. This provides an efficient means of fine-tuning the LSPR properties to a target purpose of between 8-20 µm (1250-500 cm(-1)). Finally, we show surface plasmon resonance sensing to absorbing polymer layers. We address values of the quality factor, sensitivity and figure of merit of 16 700 nm RIU(-1) and 2.5, respectively. These results demonstrate Si-doped InAsSb/GaSb to be a low-loss/high sensitive material making it very promising for the development of biosensing devices in the mid-infrared.
