ABSTRACT
Indium (In) was doped into TiO2 thin film (TF) using the electron beam evaporation technique followed by an annealing process. The high resolution X-ray diffraction (HRXRD) analysis revealed lower angle diffraction peak (2î) shifting of Rutile (002) phases of TiO2 from 61.9 to 61.56 for an increased In doped samples. Calculated average grain size from FESEM (field emission scanning electron microscope) gradually decreased from 21.12 nm to 17.03 mm with an increase in In content ranging from 1.45~17.30 at%. HRXRD data revealed that crystallite sizes also reduced from 21.79 nm to 16.93 nm with an increased In doping concentration. Doping of In leads to the formation of inhomogeneous InxTiy O2 alloy that enhances the transition between 3.3-3.42 eV energy levels with variation in doping concentration. The photo-efficiencies for increased doping concentration of In with 3.47 at% and 17.30 at% were enhanced by 2.56 and 2.76 times, respectively, compared to the undoped TiO2 TF detector and both were larger than low doped In with 1.45 at% sample. The ratio of main band detection intensity to oxygen defect level was also increased from 0.22 to 2.22 with the gradual increase in In content.
