Using nitrile functional groups to replace amines for solution-deposited single-walled carbon nanotube network films.

Amine-terminated self-assembled monolayers (SAMs) can be utilized to selectively adsorb semiconducting single-walled carbon nanotubes (S-SWNTs), but are not ideal. Formation of these monolayer films from silanes can be dramatically influenced by atmospheric and other processing conditions, resulting in poor-quality SAMs or irreproducible results. The surface sorting method of fabricating these semiconducting nanotube networks (SWNTnts) can become ineffective if the functionalized surface is not smooth with high amine density. However, by replacing the amine with a nitrile group, SAM formation can be made more controllable and reproducible. Upon SWNT deposition, the nitrile group was found to not only adsorb higher density SWNTnts but also sort the nanotubes efficiently, as shown by micro-Raman spectroscopy. Upon testing these SWNTnts for device performance, these thin-film transistors (TFTs) were also found to yield higher quality devices than those fabricated on amine surfaces. Overall, these results expand the applicability of surface sorting and SWNT adsorption to other organic functionalities for nanotube separation. This report provides an outline of the merits and characterization of using the nitrile functional group for the separation and adsorption of SWNTs and its integration in network TFTs.

Effects of dispersion conditions of single-walled carbon nanotubes on the electrical characteristics of thin film network transistors.

To facilitate solution deposition of single-walled carbon nanotubes (SWNTs) for integration into electronic devices they need to be purified and dispersed into solutions. The vigorous sonication process for preparing these dispersions leads to large variations in the length and defect density of SWNTs, affecting the resulting electronic properties. Understanding the effects of solution processing steps can have important implications in the design of SWNT films for electronic applications. Here, we alter the SWNTs by varying the sonication time, followed by deposition of sub-monolayer SWNT network films onto functionalized substrates. The corresponding electrical performance characteristics of the resulting field effect transistors (FETs) are correlated with SWNT network sorting and morphology. As sonication exposure increases, the SWNTs shorten, which not only affects electrical current by increasing the number of junctions but also presumably leads to more defects. The off current of the resulting transistors initially increased with sonication exposure, presumably due to less efficient sorting of semiconducting SWNTs as the defect density increases. After extended sonication, the on and off current decreased because of increased bundling and fewer percolation pathways. The final transistor properties are influenced by the nanotube solution concentration, density, alignment, and the selectivity of surface sorting of the SWNT networks. These results show that in addition to chirality, careful consideration of SWNT dispersion conditions that affect SWNT length, bundle diameter, and defect density is critical for optimal SWNT-FET performance and potentially other SWNT-based electronic devices.

Solution assembly of organized carbon nanotube networks for thin-film transistors.

Ultrathin, transparent electronic materials consisting of solution-assembled nanomaterials that are directly integrated as thin-film transistors or conductive sheets may enable many new device structures. Applications ranging from disposable autonomous sensors to flexible, large-area displays and solar cells can dramatically expand the electronics market. With a practical, reliable method for controlling their electronic properties through solution assembly, submonolayer films of aligned single-walled carbon nanotubes (SWNTs) may provide a promising alternative for large-area, flexible electronics. Here, we report SWNT network TFTs (SWNTntTFTs) deposited from solution with controllable topology, on/off ratios averaging greater than 10(5), and an apparent mobility averaging 2 cm(2)/V.s, without any pre- or postprocessing steps. We employ a spin-assembly technique that results in chirality enrichment along with tunable alignment and density of the SWNTs by balancing the hydrodynamic force (spin rate) with the surface interaction force controlled by a chemically functionalized interface. This directed nanoscale assembly results in enriched semiconducting nanotubes yielding excellent TFT characteristics, which is corroborated with mu-Raman spectroscopy. Importantly, insight into the electronic properties of these SWNT networks as a function of topology is obtained.