ABSTRACT
We have developed an InAs/InP quantum dot (QD) C-band coherent comb laser (CCL) module with actively stabilized absolute wavelength and power, and channel spacing of 34.462 GHz with ± 100 ppm accuracy. The total output power is up to 46 mW. The integrated average relative intensity noise (RIN) values of the lasing spectrum and a filtered single channel at 1540.19 nm were -165.6 dB/Hz and -130.3 dB/Hz respectively in the frequency range from 10 MHz to 10 GHz. The optical linewidth of the 45 filtered individual channels between 1531.77 nm to 1543.77 nm ranged from 850 kHz to 2.16 MHz. We have also analyzed the noise behaviors of each individual channel.
ABSTRACT
An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.
Subject(s)
Arsenicals/chemistry , Indium/chemistry , Light , Luminescent Measurements/instrumentation , Quantum DotsABSTRACT
We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.
Subject(s)
Arsenicals/chemistry , Indium/chemistry , Lasers , Phosphines/chemistry , Quantum Dots , Computer Simulation , Computer-Aided Design , Equipment Design , Equipment Failure Analysis , Light , Microwaves , Models, Theoretical , Scattering, Radiation , SemiconductorsABSTRACT
We report on the generation of dual-wavelength self-mode-locking pulses from an InP-based quantum dot laser. The demonstrated device operates simultaneously at both 1543.7 and 1571.7 nm and has a repetition rate of 92.5 GHz. The pulse width is below 960 fs, and the average power coupled to a cleaved single-mode fiber is nearly 9 mW at a current bias of 60 mA.
ABSTRACT
For the first time, we report femtosecond pulses from a passive single-section InAs/InP quantum-dot (QD) mode-locked laser (MLL) with the active length of 456 microm and ridge width of 2.5 microm at the C-band wavelength range. Without any external pulse compression, the transform-limited Gaussian-pulses are generated at the 92 GHz repetition rate with the 312 fs pulse duration, which is the shortest pulse from any directly electric-pumping semiconductor MLLs to our best knowledge. The lasing threshold injection current and external differential quantum efficiency are 17.2 mA and 38%, respectively. We have also investigated the working principles of the proposed QD MLLs.
ABSTRACT
Fluorescence-mode XAFS has been used to study the local environment about chosen atomic species such as Ga and As in bulk oxide Al(1-x)Ga(x)As (x=0.96) and at the interface between thin (300 A) oxidized Al(1-x)Ga(x)As (x=0.94) film and GaAs substrate in total external-reflection mode. X-ray reflectivity experiments have also been employed to investigate the density profile of the oxide film on a GaAs substrate revealing the density profile as a function of depth. It is important to find out how the As is incorporated at the interface, the interfacial strain, and related local structural parameters for understanding that may be central in developing high performance III-V MOSFET devices.
