Experimental measurements of Xe and Kr releases from UO2 and determination of their migration mechanisms - Release rate data.

We present the raw data obtained from release rate at 1300°C of Xe and Kr implanted in UO2, related to [1]. We performed different sample preparation (polishing treatment) on polycrystalline and monocrystalline UO2. Ion implantation were performed at various fluences between 9.5 × 1010 to 5 × 1014 i/cm2 in UO2 samples. Release rate of Xe and Kr are obtained at 1300°C under vacuum from desorption experiments performed on the PIAGARA plateform at the CENBG (Centre d'Etudes Nucléaires de Bordeaux-Gradignan). Since we made a variety of samples depending on multiple parameters (sample type, sample preparation, ion implantation type and fluence), these data represent a serious amount of work that could be saved for the scientific community that might use them for other purposes such as burst modelling.

Three-dimensional scanning transmission electron microscopy of dislocation loops in tungsten.

Scanning transmission electron microscopy (STEM) imaging using diffraction contrast is a powerful technique to assess crystal defects. In this work it is used to assess the spatial distribution of radiation induced defect in tungsten. In effect, its irradiation leads to the formation of nanometric dislocation loops that under certain conditions may form intriguing 3-D rafts. In this study, we have irradiated thin tungsten samples in situ in a TEM with 1.2 MeV W ions to 0.017 dpa at room temperature (RT) and at 700 °C. Besides the Burgers vector analysis, the number density and size of the dislocation loops with their spatial arrangement were quantitatively characterized by stereo imaging in STEM mode. Most of the loops have a Burgers vector ½ a0 〈111〉, with some a0 〈100〉 at room temperature. Loops are located mainly in the simulated damage profile but there is also a significant portion in deeper regions of the sample, indicating that loops in W diffuse easily, even at RT. At 700 °C, loops form elongated rafts that contain dislocation segments having a Burgers vector ½ a0 〈111〉. The rafts are narrow and reside on {111} planes; they are elongated along 〈110〉 directions, which correspond, when combined to the rafts' Burgers vector, to the lines of edge dislocations. Compared to conventional TEM, 3-D analysis in STEM appears thus as a powerful technique for quantitative analyses of defects in tungsten, as it allows reducing the background diffraction contrast and reaching thicker areas of the electron transparent foil, here 0.5 µm of tungsten at 200 kV.

Identification of the nitrogen split interstitial (N-N)(N) in GaN.

Combining electron paramagnetic resonance, density functional theory, and positron annihilation spectroscopy (PAS), we identify the nitrogen interstitial defect in GaN. The isolated interstitial is unstable and transforms into a split interstitial configuration (N-N)(N). It is generated by particle irradiation with an introduction rate of a primary defect, pins the Fermi level at E(C)-1.0 eV for high fluences, and anneals out at 400 °C. The associated defect, the nitrogen vacancy, is observed by PAS only in the initial stage of irradiation.

Strong coupling of a spin ensemble to a superconducting resonator.

We report the realization of a quantum circuit in which an ensemble of electronic spins is coupled to a frequency tunable superconducting resonator. The spins are nitrogen-vacancy centers in a diamond crystal. The achievement of strong coupling is manifested by the appearance of a vacuum Rabi splitting in the transmission spectrum of the resonator when its frequency is tuned through the nitrogen-vacancy center electron spin resonance.