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1.
ACS Appl Mater Interfaces ; 2(4): 1228-35, 2010 Apr.
Article in English | MEDLINE | ID: mdl-20384310

ABSTRACT

Self-assembled surfactant structures at the solid/liquid interface have been shown to act as nanoparticulate dispersants and are capable of providing a highly effective, self-healing boundary lubrication layer in aqueous environments. However, in some cases in particular, chemical mechanical planarization (CMP) applications the lubrication imparted by self-assembled surfactant dispersants can be too strong, resulting in undesirably low levels of wear or friction disabling material removal. In the present investigation, the influence of calcium cation (Ca(2+)) addition on dodecyl trimethylammonium bromide (C(12)TAB) mediated lubrication of silica surfaces is examined via normal and lateral atomic force microscopy (AFM/LFM), benchtop polishing experiments and surface adsorption characterization methods. It is demonstrated that the introduction of competitively adsorbing cations that modulate the surfactant headgroup surface affinity can be used to tune friction and wear without compromising dispersion stability. These self-healing, reversible, and tunable tribological systems are expected to lead to the development of smart surfactant-based aqueous lubrication schemes, which include designer polishing slurries and devices that take advantage of pressure-gated friction response phenomena.


Subject(s)
Calcium/chemistry , Silicon Dioxide/chemistry , Adsorption , Binding Sites , Cations , Cetrimonium , Cetrimonium Compounds/chemistry , Hydrogen-Ion Concentration , Microscopy, Atomic Force/methods , Microscopy, Electron, Scanning , Pressure , Static Electricity , Stress, Mechanical , Surface Properties , Surface-Active Agents/chemistry
2.
J Colloid Interface Sci ; 263(2): 506-15, 2003 Jul 15.
Article in English | MEDLINE | ID: mdl-12909041

ABSTRACT

Chemical mechanical polishing (CMP) is an essential step in metal and dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. These requirements are met through the control of chemical and mechanical interactions during the polishing process by engineering the slurry chemistry, particulate properties, and stability. In this study, the performance of surfactant-stabilized silica CMP slurries at high pH and high ionic strengths are investigated with particular emphasis on the particle-particle and particle-substrate interactions. It is shown that for the design of consistently high performing slurries, stability of abrasive particles must be achieved under the dynamic processing conditions of CMP while maintaining sufficient pad-particle-wafer interactions.

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