Thermionic Emission of Atomic Layer Deposited MoO3/Si UV Photodetectors.

Ultrathin MoO3 semiconductor nanostructures have garnered significant interest as a promising nanomaterial for transparent nano- and optoelectronics, owing to their exceptional reactivity. Due to the shortage of knowledge about the electronic and optoelectronic properties of MoO3/n-Si via an ALD system of few nanometers, we utilized the preparation of an ultrathin MoO3 film at temperatures of 100, 150, 200, and 250 °C. The effect of the depositing temperatures on using bis(tbutylimido)bis(dimethylamino)molybdenum (VI) as a molybdenum source for highly stable UV photodetectors were reported. The ON-OFF and the photodetector dynamic behaviors of these samples under different applied voltages of 0, 0.5, 1, 2, 3, 4, and 5 V were collected. This study shows that the ultrasmooth and homogenous films of less than a 0.30 nm roughness deposited at 200 °C were used efficiently for high-performance UV photodetector behaviors with a high sheet carrier concentration of 7.6 × 1010 cm-2 and external quantum efficiency of 1.72 × 1011. The electronic parameters were analyzed based on thermionic emission theory, where Cheung and Nord's methods were utilized to determine the photodetector electronic parameters, such as the ideality factor (n), barrier height (Φ0), and series resistance (Rs). The n-factor values were higher in the low voltage region of the I-V diagram, potentially due to series resistance causing a voltage drop across the interfacial thin film and charge accumulation at the interface states between the MoO3 and Si surfaces.

Development of Yttrium-Doped BaTiO3 for Next-Generation Multilayer Ceramic Capacitors.

The use of electronic devices that incorporate multilayer ceramic capacitors (MLCCs) is on the rise, requiring materials with good electrical properties and a narrow band gap. This study synthesized yttrium-substituted barium titanate (Ba1-x Y x TiO3, BYT) using a sol-gel process at 950 °C with varying concentrations of yttrium (0 ≤ x ≤ 0.3). X-ray diffraction analysis showed that the tetragonal phase became less pronounced as the yttrium content increased. The samples had varying grain sizes and porosity, with the BY30%T sample having the narrowest band gap at 2.21 eV. The BYT ceramic with 30% yttrium had a thermal conductivity of up to 7 W/m K and an electrical conductivity down to 0.002 (Ω cm)-1 at 180 °C. The current-voltage characteristics of the BYT MLCC were also studied, showing potential use in next-generation high-capacity MLCCs. This work presents BYT as a promising material for these types of capacitors.

Functionality and Activity of Sol-Gel-Prepared Co and Fe co-Doped Lead-Free BTO for Thermo-Optical Applications.

The BTO, BFTC, and BCTF compounds were synthesized by the sol-gel method. The XRD study revealed the formation of single-phase tetragonal perovskite structures with the space group (P4mm). The crystalline parameters were studied as a function of Fe and Co contents and occupation of Ba and/or Ti sites by Fe and Co in the BTO lattice. It was found that the obtained strain increases when Ba2+ is substituted by Co2+ and Ti4+ by Fe3+. The Raman investigation confirmed the existence of three active modes (B1/E (TO1LO), (E (TO)/A1(TO3), and (A 1(LO)/E (TO), all of which are related to the existence of the tetragonal phase and strongly support the XRD results. The microstructural study showed a clear correlation between the presence of Fe and Co and the grain size distribution. Optical studies revealed the improvement in band gap energy with transition-metal (Fe and Co) co-doped BTO ceramics. The decrease in the band gap is explained by the competing effects of Columbian interactions, microdeformation, and oxygen defects. The results indicate that the presence of Fe and Co dopants enhances the absorption in the BTO ceramic. The dopants demonstrated an effect on thermal conductivity: they decreased the thermal conductivity of BTO, which is in the range of 0.76-2.23 W m-1 K-1 at room temperature and 2.02-0.27 W m-1 K-1 at elevated temperatures. The microstructure of the manufactured materials and the grain size distribution affect the compressive strength.

Nanostructured MoS2 and WS2 Photoresponses under Gas Stimuli.

This study was on the optoelectronic properties of multilayered two-dimensional MoS2 and WS2 materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO2, and O2 environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS2 (n-type)/Si (p-type) and WS2 (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 105 cm-2 for WS2 thin film. The IV electrical results revealed that WS2 is more reactive than MoS2 film under different gas stimuli. WS2 film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 102 cm2/V. WS2 film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO2 environment was observed. Additionally, the external quantum efficiency of WS2 revealed a remarkable enhancement in the CO2 environment of 1.62 × 108 compared to MoS2 film with 6.74 × 106. According to our findings, the presence of CO2 on the surface of WS2 improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS2 as a photodetector under gas stimuli for future optoelectronic applications.

Ultra-sensitive gas sensor based fano resonance modes in periodic and fibonacci quasi-periodic Pt/PtS2 structures.

Ultra-sensitive greenhouse gas sensors for CO2, N2O, and CH4 gases based on Fano resonance modes have been observed through periodic and quasi-periodic phononic crystal structures. We introduced a novel composite based on metal/2D transition metal dichalcogenides (TMDs), namely; platinum/platinum disulfide (Pt/PtS2) composite materials. Our gas sensors were built based on the periodic and quasi-periodic phononic crystal structures of simple Fibonacci (F(5)) and generalized Fibonacci (FC(7, 1)) quasi-periodic phononic crystal structures. The FC(7, 1) structure represented the highest sensitivity for CO2, N2O, and CH4 gases compared to periodic and F(5) phononic crystal structures. Moreover, very sharp Fano resonance modes were observed for the first time in the investigated gas sensor structures, resulting in high Fano resonance frequency, novel sensitivity, quality factor, and figure of merit values for all gases. The FC(7, 1) quasi-periodic structure introduced the best layer sequences for ultra-sensitive phononic crystal greenhouse gas sensors. The highest sensitivity was introduced by FC(7, 1) quasiperiodic structure for the CH4 with a value of 2.059 (GHz/m.s-1). Further, the temperature effect on the position of Fano resonance modes introduced by FC(7, 1) quasi-periodic PhC gas sensor towards CH4 gas has been introduced in detail. The results show the highest sensitivity at 70 °C with a value of 13.3 (GHz/°C). Moreover, the highest Q and FOM recorded towards CH4 have values of 7809 and 78.1 (m.s-1)-1 respectively at 100 °C.

Tuning the Metal-Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping.

Vanadium oxide (VO2) is considered a Peierls-Mott insulator with a metal-insulator transition (MIT) at Tc = 68° C. The tuning of MIT parameters is a crucial point to use VO2 within thermoelectric, electrochromic, or thermochromic applications. In this study, the effect of oxygen deficiencies, strain engineering, and metal tungsten doping are combined to tune the MIT with a low phase transition of 20 °C in the air without capsulation. Narrow hysteresis phase transition devices based on multilayer VO2, WO3, Mo0.2W0.8O3, and/or MoO3 oxide thin films deposited through a high vacuum sputtering are investigated. The deposited films are structurally, chemically, electrically, and optically characterized. Different conductivity behaviour was observed, with the highest value towards VO1.75/WO2.94 and the lowest VO1.75 on FTO glass. VO1.75/WO2.94 showed a narrow hysteresis curve with a single-phase transition. Thanks to the role of oxygen vacancies, the MIT temperature decreased to 35 °C, while the lowest value (Tc = 20 °C) was reached with Mo0.2W0.8O3/VO2/MoO3 structure. In this former sample, Mo0.2W0.8O3 was used for the first time as an anti-reflective and anti-oxidative layer. The results showed that the MoO3 bottom layer is more suitable than WO3 to enhance the electrical properties of VO2 thin films. This work is applied to fast phase transition devices.

Photonic bandgap engineering in (VO2)n/(WSe2)nphotonic superlattice for versatile near- and mid-infrared phase transition applications.

The application of the photonic superlattice in advanced photonics has become a demanding field, especially for two-dimensional and strongly correlated oxides. Because it experiences an abrupt metal-insulator transition near ambient temperature, where the electrical resistivity varies by orders of magnitude, vanadium oxide (VO2) shows potential as a building block for infrared switching and sensing devices. We reported a first principle study of superlattice structures of VO2as a strongly correlated phase transition material and tungsten diselenide (WSe2) as a two-dimensional transition metal dichalcogenide layer. Based on first-principles calculations, we exploit the effect of semiconductor monoclinic and metallic tetragonal state of VO2with WSe2in a photonic superlattices structure through the near and mid-infrared (NIR-MIR) thermochromic phase transition regions. By increasing the thickness of the VO2layer, the photonic bandgap (PhB) gets red-shifted. We observed linear dependence of the PhB width on the VO2thickness. For the monoclinic case of VO2, the number of the forbidden bands increase with the number of layers of WSe2. New forbidden gaps are preferred to appear at a slight angle of incidence, and the wider one can predominate at larger angles. We presented an efficient way to control the flow of the NIR-MIR in both summer and winter environments for phase transition and photonic thermochromic applications. This study's findings may help understand vanadium oxide's role in tunable photonic superlattice for infrared switchable devices and optical filters.

Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications.

The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. MoWO3/VO2/MoS2 photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO3/VO2/MoS2/Si with MoS2 deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO2 layer on MoS2/Si causes a redshift and intensive MoS2 Raman peaks. Interestingly, the incorporation of VO2 dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO2/(30 s)MoS2/Si from < 1 to > 1. By increasing the deposition time of MoS2 from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO2/(60 s)MoS2/Si structure. Both the VO2/(60 s)MoS2/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS2/Si structure. The MoWO3/VO2/(60 s)MoS2/Si photodetector displays the highest photocurrent gain of 1.6, 4.32 × 108 Jones detectivity, and ~ 1.0 × 1010 quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at ~ 40 °C.

Enhanced Gas Sensing Properties of Spin-coated Na-doped ZnO Nanostructured Films.

In this report, the structures, morphologies, optical, electrical and gas sensing properties of ZnO and ZnO: Na spin-coated films are studied. X-ray diffraction (XRD) results reveal that the films are of a single phase wurtzite ZnO with a preferential orientation along (002) direction parallel to c-axis. Na doping reduces the crystalline quality of the films. The plane surface of ZnO film turned to be wrinkle net-work structure after doping. The reflectance and the optical band gap of the ZnO film decreased after Na doping. The wrinkle net-work nanostructured Na-doped film shows an unusually sensitivity, 81.9% @ 50 sccm, for CO2 gas at room temperature compared to 1.0% for the pure ZnO film. The signals to noise ratio (SNR) and detection limit of Na-doped ZnO sensor are 0.24 and 0.42 sccm, respectively. These enhanced sensing properties are ascribed to high surface-to-volume ratio, hoping effect, and the increase of O- vacancies density according to Kroger VinK effect. The response time increased from 179 to 240 s by the incorporation of Na atoms @50 sccm. This response time increased as the CO2 concentration increased. The recovery time is increased from 122 to 472 s by the incorporation of Na atoms @50 sccm.