A Chemical, High-Temperature Way to Ag1.9Te via Quasi-Topotactic Reaction of Stuetzite-type Ag1.54Te: Structural and Thermoelectric Properties.

Semiconducting silver tellurides gained reasonable interest in the past years due to its thermoelectric, magneto-caloric, and nonlinear optic properties. Nanostructuring has been frequently used to address quantum-confinement effects of minerals and synthetic compounds in the Ag-Te system. Here, we report on the structural, thermal, and thermoelectric properties of stuetzite-like Ag1.54Te (or Ag4.63Te3) and Ag1.9Te. By a quasi-topotactic reaction upon tellurium evaporation Ag1.54Te can be transferred to Ag1.9Te after heat treatment. Crystal structures, thermal and thermoelectric properties of stuetzite-like Ag1.54Te (or Ag4.63Te3) and Ag1.9Te were determined by ex situ and in situ experiments. This method represents an elegant chemical way to Ag1.9Te, which was so far only accessible electrochemically via electrochemical removal of silver from the mineral hessite (Ag2Te). The mixed conductors show reasonable high total electric conductivities, very low thermal conductivities, and large Seebeck coefficients, which result in a significant high thermoelectric figure of 0.57 at 680 K.

Synthesis, Characterization, and Device Application of Antimony-Substituted Violet Phosphorus: A Layered Material.

Two-dimensional (2D) nanoflakes have emerged as a class of materials that may impact electronic technologies in the near future. A challenging but rewarding work is to experimentally identify 2D materials and explore their properties. Here, we report the synthesis of a layered material, P20.56(1)Sb0.44(1), with a systematic study on characterizations and device applications. This material demonstrates a direct band gap of around 1.67 eV. Using a laser-cutting method, the thin flakes of this material can be separated into multiple segments. We have also fabricated field effect transistors based on few-layer P20.56(1)Sb0.44(1) flakes with a thickness down to a few nanometers. Interestingly, these field effect transistors show strong photoresponse within the wavelength range of visible light. At room temperature, we have achieved good mobility values (up to 58.96 cm2/V·s), a reasonably high on/off current ratio (∼103), and intrinsic responsivity up to 10 µA/W. Our results demonstrate the potential of P20.56(1)Sb0.44(1) thin flakes as a two-dimensional material for applications in visible light detectors.

Inorganic Clathrates: A Polyhedron with 22†Vertices and up to Ninefold Coordinated Phosphorus Atoms.

Attractive phosphorus: Phosphorus atoms coordinated to up to nine neighbors can be found in the host structure of the clathrate Ba8 M24 P28+δ , which results in a new 22-vertex polyhedron (yellow). The physical properties can be tuned by adjusting the amount of phosphorus incorporated in the host framework of this new cage compound.

Polymorphism in Zintl Phases ACd4Pn3: Modulated Structures of NaCd4Pn3 with Pn = P, As.

NaCd4P3 and NaCd4As3 were synthesized via short-way transport using the corresponding elements and CdI2 as mineralizer. At room temperature, the two ß-polymorphs adopt the RbCd4As3 structure type which has been recently reported for alkali metal (A)-d(10) transition metal (T)-pnictides (Pn). The title compounds crystallize rhombohedrally in space group R3̅m at room temperature and show reversible phase transitions to incommensurately modulated α-polymorphs at lower temperatures. The low-temperature phases are monoclinic and can be described in space group Cm(α0γ)s with q vectors of q = (-0.04,0,0.34) for α-NaCd4P3 and q1 = (-0.02,0,0.34) for α-NaCd4As3. Thermal properties, Raman spectroscopy, and electronic structures have been determined. Both compounds are Zintl phases with band gaps of 1.05 eV for ß-NaCd4P3 and ∼0.4 eV for ß-NaCd4As3.