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1.
Electric and magnetic dipole two-photon absorption in semiconductors.
Michaelis JS; Unterrainer K; Gornik E; Bauser E.
Phys Rev B Condens Matter ; 54(11): 7917-7920, 1996 Sep 15.
Article in English | MEDLINE | ID: mdl-9984467
2.
Temperature and density dependence of the electron Landé g factor in semiconductors.
Oestreich M; Hallstein S; Heberle AP; Eberl K; Bauser E; Rühle WW.
Phys Rev B Condens Matter ; 53(12): 7911-7916, 1996 Mar 15.
Article in English | MEDLINE | ID: mdl-9982244
3.
Interfacial energies providing a driving force for Ge/Si heteroepitaxy.
Hansson PO; Albrecht M; Dorsch W; Strunk HP; Bauser E.
Phys Rev Lett ; 73(3): 444-447, 1994 Jul 18.
Article in English | MEDLINE | ID: mdl-10057448
4.
Charge state of the DX center in aluminum gallium arsenide from photo-Hall measurements.
Subramanian S; Anand S; Arora BM; Lu YC; Bauser E.
Phys Rev B Condens Matter ; 48(12): 8757-8760, 1993 Sep 15.
Article in English | MEDLINE | ID: mdl-10007090
5.
Evolution of a nonthermal electron energy distribution in GaAs.
Snoke DW; Rühle WW; Lu Y; Bauser E.
Phys Rev B Condens Matter ; 45(19): 10979-10989, 1992 May 15.
Article in English | MEDLINE | ID: mdl-10001019
6.
Nonthermalized distribution of electrons on picosecond time scale in GaAs.
Snoke DW; Rühle WW; Lu Y; Bauser E.
Phys Rev Lett ; 68(7): 990-993, 1992 Feb 17.
Article in English | MEDLINE | ID: mdl-10046050
7.
Morphology of GaAs-quantum-well interfaces grown by liquid-phase epitaxy.
Morlock U; Christen J; Bimberg D; Bauser E; Queisser H; Ourmazd A.
Phys Rev B Condens Matter ; 44(16): 8792-8797, 1991 Oct 15.
Article in English | MEDLINE | ID: mdl-9998835
8.
Pressure dependence of the indirect band gap of AlxGa1-xAs alloys (x=0.70 and 0.92) at low temperatures.
Reimann K; Holtz M; Syassen K; Lu YC; Bauser E.
Phys Rev B Condens Matter ; 44(7): 2985-2990, 1991 Aug 15.
Article in English | MEDLINE | ID: mdl-9999889
9.
Alloy-disorder-induced intervalley coupling.
Kalt H; Rühle WW; Reimann K; Rinker M; Bauser E.
Phys Rev B Condens Matter ; 43(15): 12364-12373, 1991 May 15.
Article in English | MEDLINE | ID: mdl-9997033
10.
Picosecond electron-hole droplet formation in indirect-gap AlxGa1-xAs.
Kalt H; Reimann K; Rühle WW; Rinker M; Bauser E.
Phys Rev B Condens Matter ; 42(11): 7058-7064, 1990 Oct 15.
Article in English | MEDLINE | ID: mdl-9994830
11.
Band-gap renormalization in direct-band-gap AlxGa1-xAs.
Rinker M; Kalt H; Reimann K; Lu Y; Bauser E.
Phys Rev B Condens Matter ; 42(11): 7274-7276, 1990 Oct 15.
Article in English | MEDLINE | ID: mdl-9994864
12.
Continuous-wave spectroscopy of femtosecond carrier scattering in GaAs.
Fasol G; Hackenberg W; Hughes HP; Ploog K; Bauser E; Kano H.
Phys Rev B Condens Matter ; 41(3): 1461-1478, 1990 Jan 15.
Article in English | MEDLINE | ID: mdl-9993863
13.
Pressure dependence of the DX center in Ga1-xAlxAs:Te.
Shan W; Yu PY; Li MF; Hansen WL; Bauser E.
Phys Rev B Condens Matter ; 40(11): 7831-7838, 1989 Oct 15.
Article in English | MEDLINE | ID: mdl-9991211
14.
Cooling of a hot electron-hole plasma in AlxGa1-xAs.
Rühle WW; Leo K; Bauser E.
Phys Rev B Condens Matter ; 40(3): 1756-1761, 1989 Jul 15.
Article in English | MEDLINE | ID: mdl-9992035
15.
Resonant Raman scattering by LO phonons in AlxGa1-xAs (x < 0.1): Alloying and interference effects.
Kauschke W; Cardona M; Bauser E.
Phys Rev B Condens Matter ; 35(15): 8030-8041, 1987 May 15.
Article in English | MEDLINE | ID: mdl-9941140
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