Effects of rare-earth magnetism on the superconducting upper critical field in infinite-layer nickelates.

The search for superconductivity in infinite-layer nickelates was motivated by analogy to the cuprates, and this perspective has framed much of the initial consideration of this material. However, a growing number of studies have highlighted the involvement of rare-earth orbitals; in that context, the consequences of varying the rare-earth element in the superconducting nickelates have been much debated. Here, we show notable differences in the magnitude and anisotropy of the superconducting upper critical field across the La-, Pr-, and Nd-nickelates. These distinctions originate from the 4f electron characteristics of the rare-earth ions in the lattice: They are absent for La3+, nonmagnetic for the Pr3+ singlet ground state, and magnetic for the Nd3+ Kramer's doublet. The unique polar and azimuthal angle-dependent magnetoresistance found in the Nd-nickelates can be understood to arise from the magnetic contribution of the Nd3+ 4f moments. Such robust and tunable superconductivity suggests potential in future high-field applications.

Electron Doping of the Parent Cuprate La_{2}CuO_{4} without Cation Substitution.

In the cuprates, carrier doping of the Mott insulating parent state is necessary to realize superconductivity as well as a number of other exotic states involving charge or spin density waves. Cation substitution is the primary method for doping carriers into these compounds, and is the only known method for electron doping in these materials. Here, we report electron doping without cation substitution in epitaxially stabilized thin films of La_{2}CuO_{4} grown via molecular-beam epitaxy. We use angle-resolved photoemission spectroscopy to directly measure their electronic structure and conclusively determine that these compounds are electron doped with a carrier concentration of 0.09±0.02 e^{-}/Cu. We propose that intrinsic defects, most likely oxygen vacancies, are the sources of doped electrons in these materials. Our results suggest a new approach to electron doping in the cuprates, one which could lead to a more detailed experimental understanding of their properties.

Local transport measurements at mesoscopic length scales using scanning tunneling potentiometry.

Under mesoscopic conditions, the transport potential on a thin film carrying a current is theoretically expected to bear spatial variation due to quantum interference. Scanning tunneling potentiometry is the ideal tool to investigate such variation, by virtue of its high spatial resolution. We report in this Letter the first detailed measurement of transport potential under mesoscopic conditions. Epitaxial graphene at a temperature of 17 K was chosen as the initial system for study because the characteristic transport length scales in this material are relatively large. Tip jumping artifacts are a major possible contribution to systematic errors; and we mitigate such problems by using custom-made slender and sharp tips manufactured by focused ion beam. In our data, we observe residual resistivity dipoles associated with topographical defects, and local peaks and dips in the potential that are not associated with topographical defects.

Laser-synthesized epitaxial graphene.

Owing to its unique electronic properties, graphene has recently attracted wide attention in both the condensed matter physics and microelectronic device communities. Despite intense interest in this material, an industrially scalable graphene synthesis process remains elusive. Here, we demonstrate a high-throughput, low-temperature, spatially controlled and scalable epitaxial graphene (EG) synthesis technique based on laser-induced surface decomposition of the Si-rich face of a SiC single-crystal. We confirm the formation of EG on SiC as a result of excimer laser irradiation by using reflection high-energy electron diffraction (RHEED), Raman spectroscopy, synchrotron-based X-ray diffraction, transmission electron microscopy (TEM), and scanning tunneling microscopy (STM). Laser fluence controls the thickness of the graphene film down to a single monolayer. Laser-synthesized graphene does not display some of the structural characteristics observed in EG grown by conventional thermal decomposition on SiC (0001), such as Bernal stacking and surface reconstruction of the underlying SiC surface.

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping.

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.