Stabilizing amplifier with a programmable load line for characterization of nanodevices with negative differential resistance.

Resistive switching devices and other components with negative differential resistance (NDR) are emerging as possible electronic constituents of next-generation computing architectures. Due to the exhibited NDR effects, switching operations are strongly affected by the presence of resistance in series with the memory cell. Experimental measurements useful in the development of these devices use a deliberate addition of series resistance, which can be done either by integrating resistors on-chip or by connecting external components to the wafer probing system. The former approach is considered inflexible because the resistance value attached to a given device cannot be changed or removed, while the latter approach tends to create parasitic effects that impact controllability and interfere with measurements. In this work, we introduce a circuit design for flexible characterization of two-terminal nanodevices that provides a programmatically adjustable external series resistance while maintaining low parasitic capacitance. Experimental demonstrations show the impact of the series resistance on NDR and resistive switching measurements.

Current-limiting amplifier for high speed measurement of resistive switching data.

Resistive switching devices, important for emerging memory and neuromorphic applications, face significant challenges related to the control of delicate filamentary states in the oxide material. As a device switches, its rapid conductivity change is involved in a positive feedback process that would lead to runaway destruction of the cell without current, voltage, or energy limitation. Typically, cells are directly patterned on MOS transistors to limit the current, but this approach is very restrictive as the necessary integration limits the materials available as well as the fabrication cycle time. In this article, we propose an external circuit to cycle resistive memory cells, capturing the full transfer curves while driving the cells in a way that suppresses runaway transitions. Using this circuit, we demonstrate the acquisition of 105 I, V loops per second without using on-wafer current limiting transistors. This setup brings voltage sweeping measurements to a relevant timescale for applications and enables many new experimental possibilities for device evaluation in a statistical context.

A digitally configurable measurement platform using audio cards for high-resolution electronic transport studies.

We report on a software-defined digitally configurable measurement platform for determining electronic transport properties in nanostructures with small readout signals. By using a high-resolution audio analog-to-digital/digital-to-analog converter in a digitally compensated bridge configuration we significantly increase the measurement speed compared to established techniques and simultaneously acquire large and small signal characteristics. We characterize the performance (16 bit resolution, 100 dB dynamic range at 192 kS/s) and demonstrate the application of this measurement platform for studying the transport properties of spin-valve nanopillars, a two-terminal device that exhibits giant magnetoresistance and whose resistance can be switched between two levels by applied magnetic fields and by currents applied by the audio card. The high resolution and fast sampling capability permits rapid acquisition of deep statistics on the switching of a spin-valve nanopillar and reduces the time to acquire the basic properties of the device - a state-diagram showing the magnetic configurations as function of applied current and magnetic field - by orders of magnitude.

Quantitative determination of the nonlinear pinning potential for a magnetic domain wall.

Using microwave currents, we excite resonances of geometrically confined pinned domain walls, detecting the resonance by the rectification of the microwave current. By applying magnetic fields, the resonance frequency of the domain wall oscillator can be tuned over a wide range. Increasing the power leads to a redshift due to the nonlinearity of the system. From this frequency shift, we directly deduce the quantitative shape of the potential, so that a complete characterization of the pinning potential is obtained.

Detection of current-induced resonance of geometrically confined domain walls.

Magnetic domain walls are found to exhibit quasiparticle behavior when subjected to geometrical variations. Because of the spin torque effect such a quasiparticle in a potential well is excited by an ac current leading to a dip in the depinning field at resonance for current densities as low as 2 x 10(10) A/m2. Independently the resonance frequencies of transverse walls and vortex walls are determined from the dc voltage that develops due to a rectifying effect of the resonant domain wall oscillation. The dependence on the injected current density reveals a strongly nonharmonic oscillation.

Temperature dependence of the spin torque effect in current-induced domain wall motion.

We present an experimental study of domain wall motion induced by current pulses as well as by conventional magnetic fields at temperatures between 2 and 300 K in a 110 nm wide and 34 nm thick Ni80Fe20 ring. We observe that, in contrast with field-induced domain wall motion, which is a thermally activated process, the critical current density for current-induced domain wall motion increases with increasing temperature, which implies a reduction of the spin torque efficiency. The effect of Joule heating due to the current pulses is measured and taken into account to obtain critical fields and current densities at constant sample temperatures. This allows for a comparison of our results with theory.