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1.
In situ characterization of epitaxially grown thin layers.
Mitura Z; Mazurek P; Paprocki K; Mikolajczak P; Beeby JL.
Phys Rev B Condens Matter ; 53(15): 10200-10208, 1996 Apr 15.
Article in English | MEDLINE | ID: mdl-9982588
2.
Calculation of the density of electronic states for a disordered system.
Beeby JL; Hayes TM.
Phys Rev B Condens Matter ; 49(20): 14128-14138, 1994 May 15.
Article in English | MEDLINE | ID: mdl-10010490
3.
Electronic density of states of a disordered tetrahedrally bonded semiconductor.
Hayes TM; Beeby JL.
Phys Rev B Condens Matter ; 48(24): 17732-17743, 1993 Dec 15.
Article in English | MEDLINE | ID: mdl-10008403
4.
New method to calculate the electronic properties of disordered materials.
Beeby JL; Hayes TM.
Phys Rev B Condens Matter ; 32(10): 6464-6477, 1985 Nov 15.
Article in English | MEDLINE | ID: mdl-9936749
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