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1.
J Phys Chem B ; 110(32): 15973-81, 2006 Aug 17.
Article in English | MEDLINE | ID: mdl-16898753

ABSTRACT

Thin films of guanosine and uridine ribonucleic acid (RNA) homopolymers (poly rG, poly rU) were grown in high vacuum in several steps on highly oriented pyrolytic graphite (HOPG) using electrospray deposition. Between deposition steps, the sample surface was characterized with X-ray and ultraviolet photoemission spectroscopy (XPS, UPS). The resulting spectra series allowed the determination of the orbital alignment at the HOPG interface, as well as the ionization energies of the homopolymer thin films. Comparison with earlier results on cytidine and adenosine RNA homopolymers (poly rC, poly rA) indicates significant ionization energy and charge injection barrier differences between purines and pyrimidines.


Subject(s)
Poly G/chemistry , Poly U/chemistry , RNA/chemistry , Graphite/chemistry , Membranes, Artificial , Poly A/chemistry , Poly C/chemistry , Surface Properties
2.
J Phys Chem B ; 110(6): 2692-9, 2006 Feb 16.
Article in English | MEDLINE | ID: mdl-16471873

ABSTRACT

Ribonucleic acid (RNA) polycytidine (poly rC) homopolymer thin films were prepared on highly oriented pyrolytic graphite (HOPG) substrates. The films were grown from aqueous solution directly in a vacuum in multiple steps with use of an electrospray (ES) deposition system. Before poly rC deposition and after each deposition step the sample was characterized with X-ray and ultraviolet photoemission spectroscopy (XPS, UPS). Evaluation of the UP-spectra sequence allowed the determination of ionization energy and highest occupied molecular orbital (HOMO) electronic structure, as well as the charge injection barriers between HOPG and poly rC. Comparison with earlier results on polyadenosine (poly rA) indicates significant differences between ionization energies (poly rC: 8.1 eV; poly rA: 6.8 eV) and orbital alignment at the graphite interface. The larger ionization energy of poly rC results in a larger hole injection barrier and a smaller electron injection barrier relative to the HOPG Fermi level.


Subject(s)
Poly C/chemistry , RNA/chemistry , Electrons , Graphite/chemistry , Kinetics , Membranes, Artificial , Microscopy, Atomic Force/methods , Particle Size , Sensitivity and Specificity , Spectrophotometry/methods , Spectrophotometry, Ultraviolet/methods , Surface Properties , X-Rays
3.
Langmuir ; 21(8): 3551-8, 2005 Apr 12.
Article in English | MEDLINE | ID: mdl-15807601

ABSTRACT

The electronic and chemical structure of the interface between the amino acid L-cysteine and Au was determined by photoemission spectroscopy (PES). L-cysteine was deposited by repeatedly dipping Au substrates into solutions of L-cysteine in methanol with various concentrations. To enable repeat deposition without significant contamination, the dipping procedure was performed in a glovebox directly connected to the ultrahigh vacuum (UHV) chamber in a N2 atmosphere. X-ray photoemission spectroscopy (XPS) measurements between deposition steps allowed to characterize the chemical interaction at the interface to be characterized. Ultraviolet photoemission spectroscopy (UPS) measurements yielded the orbital line-up at the interface as well as the highest occupied molecular orbital (HOMO) structure of L-cysteine. The charge injection barrier between the L-cysteine HOMO and the Au Fermi level was found to be 3.0 eV. The interface dipole between the Au substrate and the L-cysteine overlayer was determined to be 1.03 eV. The results also indicate the formation of an interface state approximately 1.5 eV above the HOMO of the L-cysteine.


Subject(s)
Cysteine/chemistry , Electrons , Gold/chemistry , Spectrophotometry/methods , Atmosphere , Models, Chemical , Nitrogen/chemistry , Stereoisomerism , Surface Properties , Thermodynamics , X-Rays
4.
Anal Bioanal Chem ; 374(4): 650-3, 2002 Oct.
Article in English | MEDLINE | ID: mdl-12397486

ABSTRACT

Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using high resolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. The spectra of the anodic oxide show strong emission of bulk-like Ga(2)O(3) and some As(2)O(3) with the admixture of suboxides and hydroxides. Ga(2)O(3) and As(2)O(3) are cathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.

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