Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation.

Herein, we investigate the behavior of skyrmions within a racetrack design incorporating voltage-controlled magnetic anisotropy (VCMA) gates. Our analysis encompassed multiple forces, including spin currents and anisotropy gradients induced by bias voltages. As a result, the efficient control of skyrmion dynamics was achieved across various VCMA gate configurations. Building upon these findings, we propose an efficient approach to reconfigurable skyrmion logic (RSL) in a thin antiferromagnetic (AFM) film through a versatile design. Our RSL harnesses the selective integration of VCMA, spin-polarized currents, and skyrmion-skyrmion (sky-sky) interactions to implement multiple logic gates, including AND, OR, XOR, NOT, NAND, XNOR, and NOR. The design brings a significant advantage with its simplified fabrication process, making the implementation of the RSL practical and accessible for various applications. Furthermore, the RSL enables seamless dynamic switching between logic gates, thereby enhancing its multifunctionality. Additionally, the strategic incorporation of sky-sky interactions and skyrmion-edge repulsion prominently facilitates the realization of complex gates, such as NAND, XNOR, and NOR gates, that typically require intricate design efforts. Hence, this streamlined integration of RSL, coupled with its adaptability to changing computational needs, underscores its potential as a practical solution for implementing high-functionality skyrmion-based logic gates.

Nucleation and manipulation of single skyrmions using spin-polarized currents in antiferromagnetic skyrmion-based racetrack memories.

In this work, an ultrafast nucleation of an isolated anti-ferromagnetic (AFM) skyrmion was reported in an AFM layer with DMi strengths of 0.47[Formula: see text]0.32 [Formula: see text] using spin-transfer torque by locally injecting pure spin currents into magnetic tracks. Besides, we revealed the key advantages of AFM skyrmion-based racetrack memories by comparing the motion of AFM and FM skyrmions driven by spin-orbit torques (SOTs) for different skyrmion sizes along racetrack memories with various notch sizes. Our results indicate that for AFM skyrmion, the skyrmion Hall effect does not exist during the skyrmion motion, therefore at small skyrmion sizes, we succeeded to overcome the repulsive forces developed in the notch area for low and large SOTs. The obtained findings were carefully analyzed by computing the variation of energy barriers associated with the notch for different skyrmion sizes using minimum energy path (MEP) calculations. We showed that the larger the skyrmion size, the harder it is to shrink the skyrmion in the notch which produces a high energy barrier (Eb) for large skyrmion sizes. Moreover, as the notch size increases, the skyrmion size shrinks further, and hence Eb increases proportionally. Nevertheless, we proved that AFM skyrmions are more efficient and flexible than FM skyrmions against boundary forces.