Robustness of Local Predictions in Atomistic Machine Learning Models.

Machine learning (ML) models for molecules and materials commonly rely on a decomposition of the global target quantity into local, atom-centered contributions. This approach is convenient from a computational perspective, enabling large-scale ML-driven simulations with a linear-scaling cost and also allows for the identification and posthoc interpretation of contributions from individual chemical environments and motifs to complicated macroscopic properties. However, even though practical justifications exist for the local decomposition, only the global quantity is rigorously defined. Thus, when the atom-centered contributions are used, their sensitivity to the training strategy or the model architecture should be carefully considered. To this end, we introduce a quantitative metric, which we call the local prediction rigidity (LPR), that allows one to assess how robust the locally decomposed predictions of ML models are. We investigate the dependence of the LPR on the aspects of model training, particularly the composition of training data set, for a range of different problems from simple toy models to real chemical systems. We present strategies to systematically enhance the LPR, which can be used to improve the robustness, interpretability, and transferability of atomistic ML models.

Origins of structural and electronic transitions in disordered silicon.

Structurally disordered materials pose fundamental questions1-4, including how different disordered phases ('polyamorphs') can coexist and transform from one phase to another5-9. Amorphous silicon has been extensively studied; it forms a fourfold-coordinated, covalent network at ambient conditions and much-higher-coordinated, metallic phases under pressure10-12. However, a detailed mechanistic understanding of the structural transitions in disordered silicon has been lacking, owing to the intrinsic limitations of even the most advanced experimental and computational techniques, for example, in terms of the system sizes accessible via simulation. Here we show how atomistic machine learning models trained on accurate quantum mechanical computations can help to describe liquid-amorphous and amorphous-amorphous transitions for a system of 100,000 atoms (ten-nanometre length scale), predicting structure, stability and electronic properties. Our simulations reveal a three-step transformation sequence for amorphous silicon under increasing external pressure. First, polyamorphic low- and high-density amorphous regions are found to coexist, rather than appearing sequentially. Then, we observe a structural collapse into a distinct very-high-density amorphous (VHDA) phase. Finally, our simulations indicate the transient nature of this VHDA phase: it rapidly nucleates crystallites, ultimately leading to the formation of a polycrystalline structure, consistent with experiments13-15 but not seen in earlier simulations11,16-18. A machine learning model for the electronic density of states confirms the onset of metallicity during VHDA formation and the subsequent crystallization. These results shed light on the liquid and amorphous states of silicon, and, in a wider context, they exemplify a machine learning-driven approach to predictive materials modelling.