Hexagonal sphere gratings for enhanced light trapping in crystalline silicon solar cells.

Enhanced absorption of near infrared light in silicon solar cells is important for achieving high conversion efficiencies while reducing the solar cell's thickness. Hexagonal gratings on the rear side of solar cells can achieve such absorption enhancement. Our wave optical simulations show photocurrent density gains of up to 3 mA/cm2 for solar cells with a thickness of 40 µm and a planar front side. Hexagonal sphere gratings have been fabricated and optical measurements confirm the predicted absorption enhancement. The measured absorption enhancement corresponds to a photocurrent density gain of 1.04 mA/cm2 for planar wafers with a thickness of 250 µm and 1.49 mA/cm2 for 100 µm.

Nanoimprinted diffraction gratings for crystalline silicon solar cells: implementation, characterization and simulation.

Light trapping is becoming of increasing importance in crystalline silicon solar cells as thinner wafers are used to reduce costs. In this work, we report on light trapping by rear-side diffraction gratings produced by nano-imprint lithography using interference lithography as the mastering technology. Gratings fabricated on crystalline silicon wafers are shown to provide significant absorption enhancements. Through a combination of optical measurement and simulation, it is shown that the crossed grating provides better absorption enhancement than the linear grating, and that the parasitic reflector absorption is reduced by planarizing the rear reflector, leading to an increase in the useful absorption in the silicon. Finally, electro-optical simulations are performed of solar cells employing the fabricated grating structures to estimate efficiency enhancement potential.

Micro-spectroscopy on silicon wafers and solar cells.

Micro-Raman (µRS) and micro-photoluminescence spectroscopy (µPLS) are demonstrated as valuable characterization techniques for fundamental research on silicon as well as for technological issues in the photovoltaic production. We measure the quantitative carrier recombination lifetime and the doping density with submicron resolution by µPLS and µRS. µPLS utilizes the carrier diffusion from a point excitation source and µRS the hole density-dependent Fano resonances of the first order Raman peak. This is demonstrated on micro defects in multicrystalline silicon. In comparison with the stress measurement by µRS, these measurements reveal the influence of stress on the recombination activity of metal precipitates. This can be attributed to the strong stress dependence of the carrier mobility (piezoresistance) of silicon. With the aim of evaluating technological process steps, Fano resonances in µRS measurements are analyzed for the determination of the doping density and the carrier lifetime in selective emitters, laser fired doping structures, and back surface fields, while µPLS can show the micron-sized damage induced by the respective processes.