Towards High Performance: Solution-Processed Perovskite Solar Cells with Cu-Doped CH3NH3PbI3.

Perovskite solar cells (PSCs) have demonstrated remarkable photovoltaic performance, positioning themselves as promising devices in the field. Theoretical calculations suggest that copper (Cu) can serve as an effective dopant, potentially occupying interstitial sites in the perovskite structure, thereby reducing the energy barrier and enhancing carrier extraction. Subsequent experimental investigations confirm that adding CuI as an additive to MAPbI3-based perovskite cells improves optoelectronic properties and overall device performance. Optimizing the amount of Cu (0.01 M) has been found to significantly enhance crystalline quality and grain size, leading to improved light absorption and suppressed carrier recombination. Consequently, the power conversion efficiency (PCE) of Cu-doped PSCs increased from 16.3% to 18.2%. However, excessive Cu doping (0.1 M) negatively impacts morphology, resulting in inferior optical properties and diminished device performance. Furthermore, Cu-doped PSCs exhibit higher stabilized power output (SPO) compared to pristine cells. This study underscores the substantial benefits of Cu doping for advancing the development of highly efficient PSCs.

A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations.

In this study, we explore the effects of Zn doping on the electronic, optical, and thermoelectric properties of α-SnSe in bulk and monolayer forms, employing density functional theory calculations. By varying the doping concentrations, we aim to understand the characteristics of Zn-doped SnSe in both systems. Our analysis of the electronic band structure using (PBE), (SCAN), and (HSE06) functionals reveals that all doped systems exhibit semiconductor-like behavior, making them suitable for applications in optoelectronics and photovoltaics. Notably, the conduction bands in SnSe monolayers undergo changes depending on the Zn concentration. Furthermore, the optical analysis indicates a decrease in the dielectric constant when transitioning from bulk to monolayer forms, which is advantageous for capacitor production. Moreover, heavily doped SnSe monolayers hold promise for deep ultraviolet applications. Examining the thermoelectric transport properties, we observe that Zn doping enhances the electrical conductivity in bulk SnSe at temperatures below 500 K. However, the electronic thermal conductivity of monolayer samples is lower compared to bulk samples, and it decreases consistently with increasing Zn concentrations. Additionally, the Zn-doped 2D samples exhibit high Seebeck coefficients across most of the temperature ranges investigated.

First-principles study of the structural, optoelectronic and thermophysical properties of the π-SnSe for thermoelectric applications.

Tin selenide (SnSe) has thermoelectric (TE) and photovoltaic (PV) applications due to its exceptional advantages, such as the remarkable figure of merit (ZT ≈ 2.6 at 923 K) and excellent optoelectronic properties. In addition, SnSe is nontoxic, inexpensive, and relatively abundant. These aspects make SnSe of great practical importance for the next generation of thermoelectric devices. Here, we report structural, optoelectronic, thermodynamic, and thermoelectric properties of the recently experimentally identified binary phase of tin monoselenide (π-SnSe) by using the density functional theory (DFT). Our DFT calculations reveal that π-SnSe features an optical bandgap of 1.41 eV and has an exceptionally large lattice constant (12.2 Å, P213). We report several thermodynamic, optical, and thermoelectric properties of this π-SnSe phase for the first time. Our finding shows that the π-SnSe alloy is exceptionally promising for the next generation of photovoltaic and thermoelectric devices at room and high temperatures.