ABSTRACT
We present an integrated optical phased array (OPA) which embeds in-line optical amplifiers and phase modulators to provide beam-forming capability with gain and beam steering in the 1465-1590 nm wavelength range. We demonstrate up to 21.5 dB net on-chip gain and up to 35.5 mW optical output power. The OPA circuit is based on an InP photonic integration platform and features the highest measured on-chip gain and output power level recorded in an active OPA (i.e., with amplification), to the best of our knowledge. Furthermore, the OPA enables the independent control of both amplitude and phase in its arms and through this we demonstrate programmable beam shaping for two cases. First, we carried out a Gaussian apodization of the power distribution profile in the OPA emitter waveguides, leading to 19.8 dB sidelobe suppression in the far-field beam, which is the highest value recorded for active OPAs, and then we demonstrated beam forming of 0th, 1st, and 2nd order 1D Hermite-Gaussian beams in free-space.
ABSTRACT
Monolithic integrated receivers are highly desired due to the potential of mass production and the reduction of device size and cost. In this Letter, a monolithic integrated optical wireless communication (OWC) receiver with optical preamplifiers is designed, fabricated, and investigated to achieve high sensitivity based on photonic integration technology. The proposed receiver consists of one waveguide PIN photodetector integrated with two semiconductor optical amplifiers (SOAs). Compared with using a one-stage optical amplifier, using two independent SOAs as a two-stage amplifier offers the advantage of optimizing the noise figure of each amplifier independently by tuning their injection currents, which leads to the reduction of the total noise and an improvement of the receiver sensitivity. The achieved sensitivity for a 10-Gb/s OOK signal with 10-dBm launch power at 1550-nm wavelength by using the designed receiver is up to -27.5 dBm at a bit-error-ratio (BER) level of 3.1×10-3 over a 0.9-m indoor free-space link. The experimental results show the potential to achieve a high-speed OWC link with high sensitivity by using a cascaded SOA/PIN monolithic integrated receiver.
ABSTRACT
We investigate the effect of a ring resonator on the linewidth and output spectrum of monolithically integrated extended cavity multi-section DBR lasers with an intra-cavity ring resonator. The goal is to achieve an understanding of whether and how the use of an additional ring filter improves the performance of a DBR laser on the aspects of the SMSR and intrinsic linewidth using the capabilities of the InP active-passive integration platform. The laser output spectrum is in good agreement with our theoretical calculations from a steady-state spectral model. A side-mode suppression ratio between 60 and 70â dB is measured for a range of operating semiconductor optical amplifier currents. The frequency noise power spectral density is measured for a range of output power levels. A minimum intrinsic linewidth of 63 kHz is reported. We compare the measured Lorentzian linewidths with our theoretical expectations and present estimates of the possible linewidth improvement with the available photonic integration technology used in this work.
ABSTRACT
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-locked laser which shows extra broad frequency comb generation. The ring laser was characterized in frequency and time domains for a range of the current levels injected in the semiconductor optical amplifier. The study showed an increase of the bandwidth to over 40 nm at the -20 dB level. The coherence between the longitudinal modes in the wide comb is demonstrated by the characterization of a spectrally filtered signal in time and RF domains. The relative time delay across the optical comb was measured.
ABSTRACT
Optical frequency combs emerge as a promising technology that enables highly sensitive, near-real-time spectroscopy with a high resolution. The currently available comb generators are mostly based on bulky and high-cost femtosecond lasers for dense comb generation (line spacing in the range of 100 MHz to 1 GHz). However, their integrated and low-cost counterparts, which are integrated semiconductor mode-locked lasers, are limited by their large comb spacing, small number of lines and broad optical linewidth. In this study, we report a demonstration of a III-V-on-Si comb laser that can function as a compact, low-cost frequency comb generator after frequency stabilization. The use of low-loss passive silicon waveguides enables the integration of a long laser cavity, which enables the laser to be locked in the passive mode at a record-low 1 GHz repetition rate. The 12-nm 10-dB output optical spectrum and the notably small optical mode spacing results in a dense optical comb that consists of over 1400 equally spaced optical lines. The sub-kHz 10-dB radio frequency linewidth and the narrow longitudinal mode linewidth (<400 kHz) indicate notably stable mode-locking. Such integrated dense comb lasers are very promising, for example, for high-resolution and real-time spectroscopy applications.
ABSTRACT
A mode-locked extended cavity quantum well ring laser at 1.58 µm with a repetition rate of 2.5 GHz in the form of a photonic integrated circuit is presented. The device is realized using InP-based active-passive integration technology. The 33 mm long cavity contains gain, saturable absorption, and passive waveguide sections as well as phase shifter sections to enable fine tuning of the spectral position of the lasing modes. Passive and hybrid mode-locked operation, along with the wavelength tuning of the laser modes, are experimentally demonstrated. In the passive mode-locking regime, a beat signal at the fundamental round trip frequency with a 3 dB bandwidth of 6.1 kHz is produced on a fast photo diode.
ABSTRACT
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated.
Subject(s)
Lasers , Optical Phenomena , Quantum Theory , Radio Waves , Time FactorsABSTRACT
We report the generation of a 95 GHz carrier frequency by optical heterodyning of two wavelengths from adjacent channels from an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure of the device provides low phase noise and narrow optical linewidth, further enhanced by the intracavity filter effect of the arrayed waveguide grating. We demonstrate that the generated RF beat note, at 95 GHz, has a -3 dB linewidth of 250 kHz. To the best of our knowledge, this is the narrowest RF linewidth generated from a free-running dual-wavelength semiconductor laser. The device is realized as a photonic integrated circuit using active-passive integration technology, and fabricated on a multiproject wafer run, constituting a novel approach for a compact, low-cost dual-wavelength heterodyne source.
ABSTRACT
In this paper a study of waveguide photodetectors based on InAs/InP(100) quantum dot (QD) active material are presented for the first time. These detectors are fabricated using the layer stack of semiconductor optical amplifiers (SOAs) and are compatible with the active-passive integration technology. We investigated dark current, responsivity as well as spectral response and bandwidth of the detectors. It is demonstrated that the devices meet the requirements for swept-source optical coherent tomography (SS-OCT) around 1.7 µm. A rate equation model for QD-SOAs was modified and applied to the results to understand the dynamics of the devices. The model showed a good match to the measurements in the 1.6 to 1.8 µm wavelength range by fitting only one of the carrier escape rates. An equivalent circuit model was used to determine the capacitances which dominated the electrical bandwidth.
ABSTRACT
For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material.
Subject(s)
Interferometry/instrumentation , Lasers , Models, Theoretical , Quantum Dots , Computer Simulation , Computer-Aided Design , Equipment Design , Equipment Failure Analysis , Light , Reproducibility of Results , Scattering, Radiation , Sensitivity and SpecificityABSTRACT
We report on directional mode switching in semiconductor ring lasers through optical injection co-propagating with the lasing mode. The understanding of this novel feature in ring lasers is based on the particular structure of a two-dimensional asymptotic phase space. Our theoretical results are verified numerically and experimentally.
Subject(s)
Computer-Aided Design , Lasers, Semiconductor , Models, Theoretical , Optics and Photonics/instrumentation , Computer Simulation , Equipment Design , Equipment Failure Analysis , Light , Scattering, RadiationABSTRACT
First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.
ABSTRACT
We report on an extensive characterization of a 15GHz integrated bulk InGaAsP passively modelocked ring laser at 1530 nm. The laser is modelocked for a wide range of amplifier currents and reverse bias voltages on the saturable absorber. We have measured a timing jitter of 7.1 ps (20 kHz - 80 MHz), which is low for an all-active device using bulk material and due to the ring configuration. Measured output pulses are highly chirped, a FWHM bandwidth is obtained of up to 4.5 nm. Such lasers with high bandwidth pulses and compatible with active-passive integration are of great interest for OCDMA applications.
ABSTRACT
A 37 element adaptive optic mirror has been used intracavity to control the oscillation mode profile of a diode-laser pumped Nd:YVO4 laser. Mode and power optimisation are demonstrated by closed loop automatic optimisation of the deformable mirror.
