Porous Silica-Pillared MXenes with Controllable Interlayer Distances for Long-Life Na-Ion Batteries.

MXenes are a recently discovered class of two-dimensional materials that have shown great potential as electrodes in electrochemical energy storage devices. Despite their promise in this area, MXenes can still suffer limitations in the form of restricted ion accessibility between the closely spaced multistacked MXene layers causing low capacities and poor cycle life. Pillaring, where a secondary species is inserted between layers, has been used to increase interlayer spacings in clays with great success but has had limited application in MXenes. We report a new amine-assisted pillaring methodology that successfully intercalates silica-based pillars between Ti3C2 layers. Using this technique, the interlayer spacing can be controlled with the choice of amine and calcination temperature, up to a maximum of 3.2 nm, the largest interlayer spacing reported for an MXene. Another effect of the pillaring is a dramatic increase in surface area, achieving BET surface areas of 235 m2 g-1, a sixty-fold increase over the unpillared material and the highest reported for MXenes using an intercalation-based method. The intercalation mechanism was revealed by different characterization techniques, allowing the surface chemistry to be optimized for the pillaring process. The porous MXene was tested for Na-ion battery applications and showed superior capacity, rate capability and remarkable stability compared with those of the nonpillared materials, retaining 98.5% capacity between the 50th and 100th cycles. These results demonstrate the applicability and promise of pillaring techniques applied to MXenes providing a new approach to optimizing their properties for a range of applications, including energy storage, conversion, catalysis, and gas separations.

Photodetecting Heterostructures from Graphene and Encapsulated Colloidal Quantum Dot Films.

Heterostructure devices consisting of graphene and colloidal quantum dots (QDs) have been remarkably successful as photodetectors and have opened the door to technological applications based on the combination of these low-dimensional materials. This work explores the photodetection properties of a heterostructure consisting of a graphene field effect transistor covered by a film of silica-encapsulated colloidal QDs. Defects at the surface of the silica shell trap optically excited charge carriers, which simultaneously enables photodetection via two mechanisms: photogating, resulting in a net p-doping of the device, and Coulombic scattering of charge carriers in the graphene, producing an overall decrease in the current magnitude.

Electrical and geometrical tuning of MoS2 field effect transistors via direct nanopatterning.

Mechanically exfoliated van der Waals materials can be used to prepare proof-of-concept electronic devices. Their optoelectronic properties strongly depend on the geometry and number of layers present in the exfoliated flake. Once the device fabrication steps have been completed, tuning the device response is complex, since the geometry and number of layers cannot be easily modified. In this work, we employ Pulsed Focused Electron Beam Induced Etching (PFEBIE) to tailor the geometry and electronic properties of field effect transistors based on mechanically exfoliated Molybdenum Disulfide (MoS2) flakes. First, MoS2 field effect transistors are fabricated via optical lithography and conventional methods. Then, the geometry of the MoS2 source-drain conduction channel is modified employing a Xenon difluoride (XeF2) gas injection nozzle combined with a pulsed electron beam pattern-generation system. Electrical characterization of devices carried out before and after the nanopatterning step via PFEBIE reveals a shift in the doping from N-type towards P-type. We attribute this change to sulfur vacancies induced during the direct nanopatterning step. This is confirmed by micro-Raman and micro-Photoluminescence spectroscopy experiments. The direct nanopatterning method allows us to fine-tune the geometry and thus the electronic properties of the devices, once the conventional fabrication steps have been completed. The success rate of our tailoring method exceeds 85% when tuning the geometry of the flake into a 250 nm wide and straight conduction channel between source and drain.

Large-Area Heterostructures from Graphene and Encapsulated Colloidal Quantum Dots via the Langmuir-Blodgett Method.

This work explores the assembly of large-area heterostructures comprised of a film of silica-encapsulated, semiconducting colloidal quantum dots, deposited via the Langmuir-Blodgett method, sandwiched between two graphene sheets. The luminescent, electrically insulating film served as a dielectric, with the top graphene sheet patterned into an electrode and successfully used as a top gate for an underlying graphene field-effect transistor. This heterostructure paves the way for developing novel hybrid optoelectronic devices through the integration of 2D and 0D materials.

Electronic Properties of Sulfur Covered Ru(0001) Surfaces.

The structural properties of sulfur superstructures adsorbed on Ru(0001) have been widely studied in the past. However, much less effort has been devoted to determine their electronic properties. To understand the connection between structural and electronic properties, we have carried out density functional theory periodic boundary calculations mimicking the four long-range ordered sulfur superstructures identified experimentally by means of scanning tunneling microscopy (STM) techniques. Our simulations allow us to characterize the nature of the sulfur-Ru bond, the charge transfer between the Ru substrate and the sulfur adlayers, the interface states, and a parabolic state recently identified in STM experiments. A simple analysis, based on a one-dimensional model, reveals that this parabolic state is related to a potential well state, formed in the surface when the concentration of sulfur atoms is large enough to generate a new minimum in the surface potential.

Extracting random numbers from quantum tunnelling through a single diode.

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

Inorganically coated colloidal quantum dots in polar solvents using a microemulsion-assisted method.

The dielectric nature of organic ligands capping semiconductor colloidal nanocrystals (NCs) makes them incompatible with optoelectronic applications. For this reason, these ligands are regularly substituted through ligand-exchange processes by shorter (even atomic) or inorganic ones. In this work, an alternative path is proposed to obtain inorganically coated NCs. Differently to regular ligand exchange processes, the method reported here produces core-shell NCs and the removal of the original organic shell in a single step. This procedure leads to the formation of connected NCs resembling 1D worm-like networks with improved optical properties and polar solubility, in comparison with the initial CdSe NCs. The nature of the inorganic shell has been elucidated by X-ray Absorption Near Edge Structure (XANES), Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Photoelectron Spectroscopy (XPS). The 1D morphology along with the lack of long insulating organic ligands and the higher solubility in polar media turns these structures very attractive for their further integration into optoelectronic devices.

Organic Covalent Patterning of Nanostructured Graphene with Selectivity at the Atomic Level.

Organic covalent functionalization of graphene with long-range periodicity is highly desirable-it is anticipated to provide control over its electronic, optical, or magnetic properties-and remarkably challenging. In this work we describe a method for the covalent modification of graphene with strict spatial periodicity at the nanometer scale. The periodic landscape is provided by a single monolayer of graphene grown on Ru(0001) that presents a moiré pattern due to the mismatch between the carbon and ruthenium hexagonal lattices. The moiré contains periodically arranged areas where the graphene-ruthenium interaction is enhanced and shows higher chemical reactivity. This phenomenon is demonstrated by the attachment of cyanomethyl radicals (CH2CN(•)) produced by homolytic breaking of acetonitrile (CH3CN), which is shown to present a nearly complete selectivity (>98%) binding covalently to graphene on specific atomic sites. This method can be extended to other organic nitriles, paving the way for the attachment of functional molecules.