In Situ Smoothing of Facets on Spalled GaAs(100) Substrates during OMVPE Growth of III-V Epilayers, Solar Cells, and Other Devices: The Impact of Surface Impurities/Dopants.

One possible pathway toward reducing the cost of III-V solar cells is to remove them from their growth substrate by spalling fracture, and then reuse the substrate for the growth of multiple cells. Here we consider the growth of III-V cells on spalled GaAs(100) substrates, which typically have faceted surfaces after spalling. To facilitate the growth of high-quality cells, these faceted surfaces should be smoothed prior to cell growth. In this study, we show that these surfaces can be smoothed during organometallic vapor-phase epitaxy growth, but the choice of epilayer material and modification of the various surfaces by impurities/dopants greatly impacts whether or not the surface becomes smooth, and how rapidly the smoothing occurs. Representative examples are presented along with a discussion of the underlying growth processes. Although this work was motivated by solar cell growth, the methods are generally applicable to the growth of any III-V device on a nonplanar substrate.

A Systematic Review of Isokinetic Muscle Strength in a Healthy Population With Special Reference to Age and Gender.

CONTEXT: Despite increasing use of reference values in isokinetic measurements and increasing importance, there is no systematic review of the reference values for lower and upper limb isokinetic muscle strength. OBJECTIVE: A systematic review to analyze studies on the reference values and protocols for the measurement for upper and lower limb isokinetic muscle strength in an untrained and noninjured healthy population. DATA SOURCES: MEDLINE, Scopus, Scielo, and CINAHL (from the earliest date available to June 2020). STUDY SELECTION: Studies that measured a set of reference values for isokinetic muscle strength. STUDY DESIGN: Systematic review. LEVEL OF EVIDENCE: Level 3. DATA EXTRACTION: Two reviewers selected studies independently. Data related to participants characteristics, outcomes of interest, isokinetic parameters, reference values for isokinetic muscle strength, and quality of evidence assessment were systematically reviewed independently by 2 authors. RESULTS: A total of 31 studies met the study criteria. The included studies were used to synthesize the isokinetic muscle strength data according to age-group and sex. We extracted 1845 normative data related to isokinetic strength. Of these, 1181 items referred to lower limbs and 664 items to upper limbs. CONCLUSION: In general, agonist muscle groups are stronger than antagonist muscles, and the men tend to obtain higher strength values than women. The angular velocity varied from 10 to 300 deg/s. The reference values identified can be useful for professionals to obtain during the isokinetic evaluation of the diagnostic parameters of muscle deficiency.

Hydrogen Behavior at Crystalline/Amorphous Interface of Transparent Oxide Semiconductor and Its Effects on Carrier Transport and Crystallization.

The role of disorder and particularly of the interfacial region between crystalline and amorphous phases of indium oxide in the formation of hydrogen defects with covalent (In-OH) or ionic (In-H-In) bonding are investigated using ab initio molecular dynamics and hybrid density-functional approaches. The results reveal that disorder stabilizes In-H-In defects even in the stoichiometric amorphous oxide and also promotes the formation of deep electron traps adjacent to In-OH defects. Furthermore, below-room-temperature fluctuations help switch interfacial In-H-In into In-OH, creating a new deep state in the process. This H-defect transformation limits not only the number of free carriers but also the grain size, as observed experimentally in heavily H-doped sputtered In2Ox. On the other hand, the presence of In-OH helps break O2 defects, abundant in the disordered indium oxide, and thus contributes to faster crystallization rates. The divergent electronic properties of the ionic vs covalent H defects─passivation of undercoordinated In atoms vs creation of new deep electron traps, respectively─and the different behavior of the two types of H defects during crystallization suggest that the resulting macroscopic properties of H-doped indium oxide are governed by the relative concentrations of the In-H-In and In-OH defects. The microscopic understanding of the H defect formation and properties developed in this work serves as a foundation for future research efforts to find ways to control H species during deposition.

Development of an operando characterization stage for multi-modal synchrotron x-ray experiments.

It is widely accepted that micro- and nanoscale inhomogeneities govern the performance of many thin-film solar cell absorbers. These inhomogeneities yield material properties (e.g., composition, structure, and charge collection) that are challenging to correlate across length scales and measurement modalities. The challenge is compounded if a correlation is sought during device operation or in conditions that mimic aging under particular stressors (e.g., heat and electrical bias). Correlative approaches, particularly those based on synchrotron x-ray sources, are powerful since they can access several material properties in different modes (e.g., fluorescence, diffraction, and absorption) with minimal sample preparation. Small-scale laboratory x-ray instruments have begun to offer multi-modality but are typically limited by low x-ray photon flux, low spatial resolution, or specific sample sizes. To overcome these limitations, a characterization stage was developed to enable multi-scale, multi-modal operando measurements of industrially relevant photovoltaic devices. The stage offers compatibility across synchrotron x-ray facilities, enabling correlation between nanoscale x-ray fluorescence microscopy, microscale x-ray diffraction microscopy, and x-ray beam induced current microscopy, among others. The stage can accommodate device sizes up to 25 × 25 mm2, offering access to multiple regions of interest and increasing the statistical significance of correlated properties. The stage materials can sustain humid and non-oxidizing atmospheres, and temperature ranges encountered by photovoltaic devices in operational environments (e.g., from 25 to 100 °C). As a case study, we discuss the functionality of the stage by studying Se-alloyed CdTe photovoltaic devices aged in the stage between 25 and 100 °C.

From Femtoseconds to Gigaseconds: The SolDeg Platform for the Performance Degradation Analysis of Silicon Heterojunction Solar Cells.

Heterojunction Si solar cells exhibit notable performance degradation. We modeled this degradation by electronic defects getting generated by thermal activation across energy barriers over time. To analyze the physics of this degradation, we developed the SolDeg platform to simulate the dynamics of electronic defect generation. First, femtosecond molecular dynamics simulations were performed to create a-Si/c-Si stacks, using the machine learning-based Gaussian approximation potential. Second, we created shocked clusters by a cluster blaster method. Third, the shocked clusters were analyzed to identify which of them supported electronic defects. Fourth, the distribution of energy barriers that control the generation of these electronic defects was determined. Fifth, an accelerated Monte Carlo method was developed to simulate the thermally activated time-dependent defect generation across the barriers. Our main conclusions are as follows. (1) The degradation of a-Si/c-Si heterojunction solar cells via defect generation is controlled by a broad distribution of energy barriers. (2) We developed the SolDeg platform to track the microscopic dynamics of defect generation across this wide barrier distribution and determined the time-dependent defect density N(t) from femtoseconds to gigaseconds, over 24 orders of magnitude in time. (3) We have shown that a stretched exponential analytical form can successfully describe the defect generation N(t) over at least 10 orders of magnitude in time. (4) We found that in relative terms, Voc degrades at a rate of 0.2%/year over the first year, slowing with advancing time. (5) We developed the time correspondence curve to calibrate and validate the accelerated testing of solar cells. We found a compellingly simple scaling relationship between accelerated and normal times tnormal ∝ taccelT(accel)/T(normal). (6) We also carried out experimental studies of defect generation in a-Si:H/c-Si stacks. We found a relatively high degradation rate at early times that slowed considerably at longer time scales.

X-ray Beam Induced Current Measurements for Multi-Modal X-ray Microscopy of Solar Cells.

X-ray beam induced current (XBIC) measurements allow mapping of the nanoscale performance of electronic devices such as solar cells. Ideally, XBIC is employed simultaneously with other techniques within a multi-modal X-ray microscopy approach. An example is given herein combining XBIC with X-ray fluorescence to enable point-by-point correlations of the electrical performance with chemical composition. For the highest signal-to-noise ratio in XBIC measurements, lock-in amplification plays a crucial role. By this approach, the X-ray beam is modulated by an optical chopper upstream of the sample. The modulated X-ray beam induced electrical signal is amplified and demodulated to the chopper frequency using a lock-in amplifier. By optimizing low-pass filter settings, modulation frequency, and amplification amplitudes, noise can efficiently be suppressed for the extraction of a clear XBIC signal. A similar setup can be used to measure the X-ray beam induced voltage (XBIV). Beyond standard XBIC/XBIV measurements, XBIC can be measured with bias light or bias voltage applied such that outdoor working conditions of solar cells can be reproduced during in-situ and operando measurements. Ultimately, the multi-modal and multi-dimensional evaluation of electronic devices at the nanoscale enables new insights into the complex dependencies between composition, structure, and performance, which is an important step towards solving the materials' paradigm.

Precisão de medidas de força muscular isométrica com dinamometria manual / Accuracy of isometric muscular force measures with manual dynamometry

Objetivo: avaliar a precisão de medidas de força muscular isométrica máxima, realizadas através da dinamometria manual isométrica dos músculos responsáveis por movimentos do quadril. Metodologia: foi realizado um teste de força da musculatura do quadril em 10 voluntários saudáveis. Todos eles realizaram três repetições de força isométrica máxima, com intervalo de 15 segundos entre elas. A análise dos dados foi feita através do Coeficiente de Correlação Intraclasse (CCI) oneway, tipo consistência. Resultados: o coeficiente de correlação intraclasse (CCI), para todos os grupos musculares, ficou acima de 0,9, o que significa resultados excelentes de concordância entre as medidas. Conclusão: para o teste de dinamometria manual descrito, resultados similares foram encontrados entre a primeira, a segunda e a terceira medida realizada. Dessa forma, podemos dizer que o avaliador é capacitado para a realização dessa avaliação. Além disso, a presença de resultados consistentes em todas as três medidas significa que qualquer uma delas poderá ser utilizada para análises estatísticas posteriores.

Objective: evaluate the accuracy of maximum isometric muscle strength measurements carried out by isometric manual dynamometry of muscles responsible for movement of the hip. Methodology: a test of strength of the muscles of the hip was conducted in 10 healthy volunteers. All of them performed 3 repetitions of maximum isometric strength, with an interval of 15 seconds between them. Data analysis was made by using the Intraclass Correlation Coefficient (ICC) one-way type consistency. Results: the intraclass correlation coefficient (ICC) for all muscle groups stayed above 0.9, which means excellent results of concordance between measures. Conclusion: for the described manual dynamometry test, similar results have been found among the first, second and third measure. In this way, we can say that the evaluator is able to carry out this evaluation. In addition, the presence of consistent results on all three measures means that any one of them could be used for subsequent statistical analyses

Quantifying X-Ray Fluorescence Data Using MAPS.

The quantification of X-ray fluorescence (XRF) microscopy maps by fitting the raw spectra to a known standard is crucial for evaluating chemical composition and elemental distribution within a material. Synchrotron-based XRF has become an integral characterization technique for a variety of research topics, particularly due to its non-destructive nature and its high sensitivity. Today, synchrotrons can acquire fluorescence data at spatial resolutions well below a micron, allowing for the evaluation of compositional variations at the nanoscale. Through proper quantification, it is then possible to obtain an in-depth, high-resolution understanding of elemental segregation, stoichiometric relationships, and clustering behavior. This article explains how to use the MAPS fitting software developed by Argonne National Laboratory for the quantification of full 2-D XRF maps. We use as an example results from a Cu(In,Ga)Se2 solar cell, taken at the Advanced Photon Source beamline 2-ID-D at Argonne National Laboratory. We show the standard procedure for fitting raw data, demonstrate how to evaluate the quality of a fit and present the typical outputs generated by the program. In addition, we discuss in this manuscript certain software limitations and offer suggestions for how to further correct the data to be numerically accurate and representative of spatially resolved, elemental concentrations.

X-ray fluorescence at nanoscale resolution for multicomponent layered structures: a solar cell case study.

The study of a multilayered and multicomponent system by spatially resolved X-ray fluorescence microscopy poses unique challenges in achieving accurate quantification of elemental distributions. This is particularly true for the quantification of materials with high X-ray attenuation coefficients, depth-dependent composition variations and thickness variations. A widely applicable procedure for use after spectrum fitting and quantification is described. This procedure corrects the elemental distribution from the measured fluorescence signal, taking into account attenuation of the incident beam and generated fluorescence from multiple layers, and accounts for sample thickness variations. Deriving from Beer-Lambert's law, formulae are presented in a general integral form and numerically applicable framework. The procedure is applied using experimental data from a solar cell with a Cu(In,Ga)Se2 absorber layer, measured at two separate synchrotron beamlines with varied measurement geometries. This example shows the importance of these corrections in real material systems, which can change the interpretation of the measured distributions dramatically.

Environmental Changes in MoTe2 Excitonic Dynamics by Defects-Activated Molecular Interaction.

Monolayers of group VI transition metal dichalcogenides possess direct gaps in the visible spectrum with the exception of MoTe2, where its gap is suitably located in the infrared region but its stability is of particular interest, as tellurium compounds are acutely sensitive to oxygen exposure. Here, our environmental (time-dependent) measurements reveal two distinct effects on MoTe2 monolayers: For weakly luminescent monolayers, photoluminescence signal and optical contrast disappear, as if they are decomposed, but yet remain intact as evidenced by AFM and Raman measurements. In contrast, strongly luminescent monolayers retain their optical contrast for a prolonged amount of time, while their PL peak blue-shifts and PL intensity saturates to slightly lower values. Our X-ray photoelectron spectroscopy measurements and DFT calculations suggest that the presence of defects and functionalization of these defect sites with O2 molecules strongly dictate their material properties and aging response by changing the excitonic dynamics due to deep or shallow states that are created within the optical band gap. Presented results not only shed light on environmental effects on fundamental material properties and excitonic dynamics of MoTe2 monolayers but also highlight striking material transformation for metastable 2D systems such as WTe2, silicone, and phosphorene.

Alignment and relaxation dynamics of dye molecules in host-guest inclusion compounds as probed by dielectric spectroscopy.

The alignment and relaxation dynamics of a polar dye molecule, N,N-dimethyl-4(4-nitrophenylazo)aniline (DNAA), in zeolite L and perhydrotriphenylene (PHTP) channels were investigated by means of a combination of optical, dielectric, and quantum-chemical methods. Both the zeolite L and PHTP channels enable the dye molecules to align along the channel axis. An amplified net dipole moment of DNAA in PHTP is observed and attributed to enhanced 1D close alignment of dye molecules. In zeolite L channels, a concentration gradient is found with aggregation at the channel entrances. The dynamics of the dye in zeolite L channels reveals localized conical rotational fluctuation modes following Arrhenius-type activation with energy of 0.31 eV, which we assign to small noninteracting fluctuating polar units of the dyes being loosely aligned or isolated. Unlike zeolite L, relaxations in PHTP are characterized by cooperative wobbling motions interpreted as increased intermolecular dipole interaction due to a closely packed one-dimensional array. Temperature-dependent activation energies of 0.25 eV below 0 degrees C and 0.37 eV at ambient temperature reflect the role of the soft channel walls in the activation process.

Temperature driven reactant solubilization synthesis of BiCuOSe.

Phase-pure BiCuOSe, which is isostructural to the layered p-type transparent conductor LaCuOS, has been synthesized in high yield by a single-step hydrothermal reaction at low temperature (250 degrees C) and pressure (<20 atm). A moderate reaction temperature of 250 degrees C was sufficiently high to solubilize both Bi2O3 and Cu2O and stabilize monovalent copper and low enough to impede the oxidation of dianionic selenium. BiCuOSe exhibits a relatively high electrical conductivity (sigma approximately 3.3 S cm(-1)) and a reduced band gap (E(g) = 0.75 eV), which compare favorably with the optoelectronic properties of BiCuOS and the cerium-based oxysulfides, CeAgOS and CeCuOS.

Silver delafossite oxides.

A single-step, low-temperature (<210 degrees C) and -pressure (<20 atm) hydrothermal method has been developed to synthesize a series of silver delafossites, AgBO2 (B = Al, Ga, Sc, and In). Experimental and computational studies were performed to understand the optical and electric properties of these silver delafossites, including the first in-depth study of AgAlO2 and AgScO2. Their properties were examined as a function of the trivalent cation radius and compared to those of copper delafossites to elucidate the role of both the A- and B-site cations. While optical band gaps for silver delafossites were larger and visible light absorption was lower than values previously reported for polycrystalline powder samples of copper delafossites, the conductivities of silver delafossites are similar or lower. Electronic structure calculations indicate that these properties are due to the scarcity of silver 4d states just below the valence band maximum.

Facile synthesis of BiCuOS by hydrothermal methods.

BiCuOS, which is isostructural to the layered rare-earth oxysulfides LnCuOS (Ln = La-Eu), was synthesized by a single-step hydrothermal reaction at low temperature (250 degrees C) and pressure (<20 atm). Particular emphasis is placed on how the selection of the proper reaction conditions, such as temperature and pH, achieves a mutual high solubility of the metal-oxide reactants, Bi2O3 and Cu2O, and thus generates BiCuOS in a good yield. The optical and electrical properties of BiCuOS were measured to determine the influence of replacing a rare-earth cation with bismuth. The electrical conductivity of BiCuOS is increased over that of certain layered rare-earth oxysulfides, LnCuOS (Ln = La, Pr, and Nd), and is similar to that of the cerium members, CeCuOS and CeAgOS. Band structure calculations reveal that, similar to other potential transparent conductors containing sixth-row elements, relativistic effects significantly lower the energy of the conduction band, and thus narrow the optical band gap. These low-energy conduction bands are responsible for the electrical and optical properties of BiCuOS.

Syntheses, structures, physical properties, and theoretical studies of CeMxOS (M = Cu, Ag; x approximately 0.8) and CeAgOS.

Black single crystals of the two nonstoichiometric cerium coinage-metal oxysulfide compounds CeCu(x)OS and CeAg(x)OS (x approximately 0.8) have been prepared by the reactions of Ce2S3 and CuO or Ag2O at 1223 or 1173 K, respectively. A black powder sample of CeAgOS has been prepared by the stoichiometric reaction of Ce2S3, CeO2, Ag2S, and Ag at 1073 K. These isostructural materials crystallize in the ZrSiCuAs structure type with two formula units in the tetragonal space group P4/nmm. Refined crystal structure results and chemical analyses provide evidence that the previously known anomalously small unit-cell volume of LnCuOS for Ln = Ce (Ln = rare-earth metal) is the result of Cu vacancies and the concomitant presence of both Ce3+ and Ce4+. Both CeCu(0.8)OS and CeAgOS are paramagnetic with mu(eff) values of 2.13(6) and 2.10(1) mu(B), respectively. CeCu(0.8)OS is a p-type semiconductor with a thermal activation energy Ea = 0.22 eV, sigma(electrical) = 9.8(1) 10(-3) S/cm at 298 K, and an optical band gap Eg < 0.73 eV. CeAgOS has conductivity sigma(conductivity) = 0.16(4) S/cm and an optical band gap Eg = 0.71 eV at 298 K. Theoretical calculations with an on-site Coulomb repulsion parameter indicate that the Ce 4f states are fully spin-polarized and are not localized in CeCuOS, CeCu(0.75)OS, or CeAgOS. Calculated band gaps for CeCu(0.75)OS and CeAgOS are 0.6 and 0.8 eV, respectively.