ABSTRACT
Considering the excellent tunability of electrical and dielectric properties in binary metal oxide based multi-layered nanolaminate structures, a thermal atomic layer deposition system is carefully optimized for the synthesis of device grade Al2O3/TiO2 nanolaminates with well-defined artificial periodicity and distinct interfaces, and the role of process temperature in the structural, interfacial, dielectric and electrical properties is systematically investigated. A marginal increase in interfacial interdiffusion in these nanolaminates, at elevated temperatures, is validated using X-ray reflectivity and secondary ion mass spectrometry studies. With an increase in deposition temperature from 150 to 300 °C, the impedance spectroscopy measurements of these nanolaminates exhibited a monotonic increment in dielectric constant from â¼95 to 186, and a decrement in dielectric loss from â¼0.48 to 0.21, while the current-voltage measurements revealed a subsequent reduction in leakage current density from â¼2.24 × 10-5 to 3.45 × 10-7 A cm-2 at 1 V applied bias and an improvement in nanobattery polarization voltage from 100 mV to 700 mV, respectively. This improvement in dielectric and electrical properties at elevated processing temperature is attributed to the reduction in impurity content along with the significant enhancement in sublayer densities and the conductivity contrast driven Maxwell-Wagner interfacial polarisation. Additionally, the devices fabricated at 300 °C exhibited a higher capacitance density of â¼22.87 fF µm-2, a low equivalent oxide thickness of â¼1.51 nm, and a low leakage current density of â¼10-7 A cm-2 (at 1 V bias), making this nanolaminate a promising material for high-density energy storage applications. These findings highlight the ALD process temperature assisted growth chemistry of Al2O3/TiO2 nanolaminates for superior dielectric performance and multifaceted applications.
ABSTRACT
We have explored the electric field controlled magnetization in the nanodot CoFe2O4/SrRuO3/PMN-PT (CFO/SRO/PMN-PT) heterostructures. Ordered ferromagnetic CFO nanodots (â¼300 nm lateral dimension) are developed on the PMN-PT substrate (ferroelectric as well as piezoelectric) using a nanostencil-mask pattering method during pulsed laser deposition. The nanostructures reveal electric field induced magnetization reversal in the single domain CFO nanodots through transfer of piezostrains from the piezoelectric PMN-PT substrate to the CFO. Further, electric field modulated spin structure of CFO nanomagnets is analyzed by using x-ray magnetic circular dichroism (XMCD). The XMCD analysis reveals cations (Fe3+/Co2+) redistribution on the octahedral and tetrahedral site in the electric field poled CFO nanodots, establishing the strain induced magneto-electric coupling effects. The CFO/SRO/PMN-PT nanodots structure demonstrate multilevel switching of ME coupling coefficient (α) by applying selective positive and negative electric fields in a non-volatile manner. The retention of two stable states ofαis illustrated for â¼106seconds, which can be employed to store the digital data in non-volatile memory devices. Thus the voltage controlled magnetization in the nanodot structures leads a path towards the invention of energy efficient high-density memory devices.
