ABSTRACT
Polycrystalline samples of Ca(1-x)Gd(x)MnO(3-δ) (x = 0.00, 0.02, and 0.05) have been studied by X-ray diffraction (XRD), electrical resistivity (ρ), thermoelectric power (S), and thermal conductivity (κ). All the samples were single phase with an orthorhombic structure. The Seebeck coefficient of all the samples was negative, indicating that the predominant carriers are electrons over the entire temperature range. The iodometric titration measurements indicate that the electrical resistivity of Ca(1-x)Gd(x)MnO(3-δ) correlated well with the average valence of Mn(v+) and oxygen deficiency. Among the doped samples, Ca0.98Gd0.02MnO(3-δ) had the highest dimensionless figure of merit 0.018 at 300 K, representing an improvement of about 125% with respect to the undoped GaMnO(3-δ) sample at the same temperature.
Subject(s)
Electric Impedance , Electrons , Gadolinium/chemistry , Manganese Compounds/chemistry , Thermal Conductivity , Calcium/chemistry , Chemical Phenomena , Crystallization/methods , Manganese/chemistry , Manganese Compounds/chemical synthesis , Oxygen/chemistry , Temperature , Titrimetry/methods , X-Ray Diffraction/methodsABSTRACT
Lead zirconate titanate (Pb(1.1)(Zr(0.52)Ti(0.48))O(3)) thin films of thickness 260 nm on Pt/Ti/SiO(2)/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 °C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 °C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 °C. The surface morphologies were changed above 550 °C of the PZT thin films due to the secondary phase. Higher dielectric constant (ε(r)) and lower dielectric loss coercive field (E(c)) were achieved for the 450 °C film than for the other annealed films.
