ABSTRACT
Correction for 'Observation of ordered arrays of endotaxially grown nanostructures from size-selected Cu-nanoclusters deposited on patterned substrates of Si' by Shyamal Mondal et al., Phys. Chem. Chem. Phys., 2021, 23, 6009-6016 DOI: 10.1039/D0CP06089E.
ABSTRACT
We report the first time observation of endotaxial growth during thermal treatment of size-selected nanoclusters on a patterned substrate, when we fabricate highly ordered and partially embedded 3D crystalline Cu nanostructure arrays of controlled size in Si-substrates. For this purpose, we combine low energy cluster deposition on the ripple-patterned substrate with controlled annealing. We have investigated, in detail, the effect of the substrate pattern on the deposited size-selected clusters upon heat treatment. At the annealing temperature of 400 °C, nanosized islands are found to be organized into regular arrays, following the alignment of the substrate pattern exactly. The formed islands are trapped at the specific sites of the substrate where surface curvature is maximum and concave. It is also observed that the size of the produced nanoislands (or particles) in the direction of the ripple wave vector, i.e., across the ripples, are in congruence with the ripple wavelength. All the formed islands are partially buried in the substrate and the growth inside the substrate exhibits endotaxial growth. Such an embedded size-controlled nanoscale system can be very promising as sinter-resistant heterogenous catalyst with strong potential in clean energy technology and industrial chemical synthesis.
ABSTRACT
The formation of a self-organized nanoscale ripple pattern after off-normally incident ion bombardment on the surface of amorphous materials, or on semiconductors like silicon that are easily amorphized by ion bombardment, has attracted much attention in recent years from the point of view of both theory and applications. As the energy of the impinging ions increases from low to medium, i.e. several hundred eV to a few tens of keV, the ratio of amplitude to wavelength of the generated ripple pattern becomes so large that inter-peak shadowing of the incident ion flux takes place. Morphologically, the sinusoidal surface profile starts to become distorted after prolonged ion bombardment under such conditions. Structural and compositional modifications of the ripple morphology generated under shadowing conditions include the formation of a thicker amorphous layer with high incorporation of argon atoms in the form of nanometer sized bubbles around the middle part of the front slope of the ripple facing the ion beam, as compared to the rear slope. The present paper reviews recent developments in the experimental study of morphological, structural and compositional aspects of ripple patterns generated on a silicon surface after medium keV (30-120 keV) argon bombardment mainly at an angle of ion incidence of 60°.
