ABSTRACT
The generation of squeezed light in semiconductor materials opens opportunities for building on-chip devices that are operated at the quantum level. Here we study theoretically a squeezed light source of polariton dark solitons confined in a geometric potential well of semiconductor microcavities in the strong coupling regime. We show that polariton dark solitons of odd and even parities can be created by tuning the potential depth. When driving the potential depth linearly, a bistability of solitons with the two different parities can be induced. Strong intensity squeezing is obtained near the turning point of the bistability due to the large nonlinear interaction, which can be controlled by the cavity detuning. The phase diagram of the bistability and squeezing of the dark solitons is obtained through large scale numerical calculations. Our study contributes to the current efforts in realizing topological excitations and squeezed light sources with solid-state devices.
