Dispersion of electron-phonon resonances in one-layer graphene and its demonstration in micro-Raman scattering.

In the present work, we used Raman spectroscopy as sensitive tool for characterization of dispersion of electron-phonon resonances in one-layer graphene. We analyzed Stokes and anti-Stokes components of the Raman spectra to investigate the temperature dependence of the graphene G-band on the power of exciting radiation. Appearance and drastic intensity increase of zone-edge D-like modes caused by introduction of structural defects and/or deformations in the graphene layer were observed in the Raman spectra at high powers of excitation. We investigated phonon dispersion of one-layer graphene for iTO phonon branch at K point along K-M direction, which is involved in double-resonance Raman scattering. Raman dispersion slope of D-band is in good agreement with results of theoretical calculations based on the Green's functions approach based on the screened electron-electron interaction. Deviation of the experimental iTO phonon frequency from the linear dependence on excitation energy was observed at excitation E(exc) = 3.81 eV. Self-consistent classification of phonon states according to the symmetry for all dispersion branches of one-layer graphene was carried out.

Low- and high-frequency intermediate modes with step-like dispersion in resonance Raman scattering of carbon nanotubes.

Resonance Raman spectra of mixture of single-wall carbon nanotubes were investigated in details. The diameter distribution of the investigated nanotubes was estimated from the experimental frequencies of radial breathing modes. Two series of two-phonon lines revealing step-like behavior with excitation energy as well as non-dispersive single-phonon lines were registered in the intermediate frequency range 200-1200 cm(-1). Observed Raman lines were analyzed and their assignment to particular phonons was carried out. Step-like dispersive high intermediate-frequency modes in the range of 720-1000 cm(-1) are attributed to resonance two-phonon processes with combinations of optical and acoustical modes Low intermediate-frequency modes in the range of 300-650 cm(-1), also revealing step-like behavior, are attributed to resonance two-phonon processes with combinations of flexural optical and acoustical modes.