A GPS-Referenced Wavelength Standard for High-Precision Displacement Interferometry at λ = 633 nm.

Since the turn of the millennium, the development and commercial availability of optical frequency combs has led to a steadily increase of worldwide installed frequency combs and a growing interest in using them for industrial-related metrology applications. Especially, GPS-referenced frequency combs often serve as a "self-calibrating" length standard for laser wavelength calibration in many national metrology institutes with uncertainties better than u = 1 × 10-11. In this contribution, the application of a He-Ne laser source permanently disciplined to a GPS-referenced frequency comb for the interferometric measurements in a nanopositioning machine with a measuring volume of 200 mm × 200 mm × 25 mm (NPMM-200) is discussed. For this purpose, the frequency stability of the GPS-referenced comb is characterized by heterodyning with a diode laser referenced to an ultrastable cavity. Based on this comparison, an uncertainty of u = 9.2 × 10-12 (τ = 8 s, k = 2) for the GPS-referenced comb has been obtained. By stabilizing a tunable He-Ne source to a single comb line, the long-term frequency stability of the comb is transferred onto our gas lasers increasing their long-term stability by three orders of magnitude. Second, short-term fluctuations-related length measurement errors were reduced to a value that falls below the nominal resolving capabilities of our interferometers (ΔL/L = 2.9 × 10-11). Both measures make the influence of frequency distortions on the interferometric length measurement within the NPMM-200 negligible. Furthermore, this approach establishes a permanent link of interferometric length measurements to an atomic clock.

Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching.

The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.