ABSTRACT
The review is devoted to the fundamental aspects and characteristic features of the magnetoelectric effects, reported in the literature on Josephson junctions (JJs). The main focus of the review is on the manifestations of the direct and inverse magnetoelectric effects in various types of Josephson systems. They provide a coupling of the magnetization in superconductor/ferromagnet/superconductor JJs to the Josephson current. The direct magnetoelectric effect is a driving force of spin torques acting on the ferromagnet inside the JJ. Therefore it is of key importance for the electrical control of the magnetization. The inverse magnetoelectric effect accounts for the back action of the magnetization dynamics on the Josephson subsystem, in particular, making the JJ to be in the resistive state in the presence of the magnetization dynamics of any origin. The perspectives of the coupling of the magnetization in JJs with ferromagnetic interlayers to the Josephson current via the magnetoelectric effects are discussed.
ABSTRACT
Dynamic states offer extended possibilities to control the properties of quantum matter. Recent efforts are focused on studying the ordered states which appear exclusively under the time-dependent drives. Here, we demonstrate a class of systems which feature dynamic spin-triplet superconducting order stimulated by the alternating electric field. The effect is based on the interplay of ferromagnetism, interfacial spin-orbital coupling, and the condensate motion driven by the field, which converts hidden static p-wave order, produced by the joint action of the ferromagnetism and the spin-orbital coupling, into dynamic s-wave equal-spin-triplet correlations. We demonstrate that the critical current of Josephson junctions hosting these states is proportional to the electromagnetic power, supplied either by the external irradiation or by the ac current source. Based on these unusual properties we propose the scheme of a Josephson transistor which can be switched by the ac voltage and demonstrates an even-numbered sequence of Shapiro steps. Combining the photoactive Josephson junctions with recently discovered Josephson phase batteries we find photomagnetic SQUID devices which can generate spontaneous magnetic fields while being exposed to irradiation.
ABSTRACT
We describe resistive states of the system combining two types of orderings-a superconducting and a ferromagnetic one. It is shown that in the presence of magnetization dynamics such systems become inherently dissipative and in principle cannot sustain any amount of the superconducting current because of the voltage generated by the magnetization dynamics. We calculate generic current-voltage characteristics of a superconductor-ferromagnet-superconductor Josephson junction with an unpinned domain wall and find the low-current resistance associated with the domain wall motion. We suggest the finite slope of Shapiro steps as the characteristic feature of the regime with domain wall oscillations driven by the ac external current flowing through the junction.
ABSTRACT
By now it is known that in a singlet superconductor-ferromagnet (S-F) structure the superconducting correlations carried by opposite-spin pairs penetrate into the ferromagnet over a short distance of the order of magnetic coherence length. The long-range proximity effect (LRPE), taking place on the length scale of the normal metal coherence length, can only be maintained by equal-spin pairs, which can be generated by magnetic inhomogeneities in the system. In this Letter, we have predicted a new type of LRPE, which can take place in S-F heterostructures under nonequilibrium conditions. The superconducting correlations in the F region are generated by opposite-spin Cooper pairs and equal-spin pairs are not involved. The possibility for an opposite-spin pair to penetrate into the ferromagnet over a large distance is provided by creation of the proper nonequilibrium quasiparticle distribution there. This leads to a sharp increase (up to a few orders of magnitude) of the critical Josephson current through a S-F-S junction at some values of the voltage controlling the nonequilibrium distribution in the F interlayer.
