Volume detection based on porous silicon waveguide for CO2 mid-infrared spectroscopy.

A mid-infrared (mid-IR) porous silicon (PSi) waveguide gas sensor was fabricated. PSi guiding and confinement layers were prepared by electrochemical anodization. Ridge waveguides were patterned using standard i-line photolithography and reactive ion etching. Due to the open pores, light and gas molecules interact in the inside volume, unlike bulk material in which the interaction takes place with the evanescent part of the light. Propagation losses are measured for a wavelength range spanning from λ = 3.9 to 4.55 µm with a value of 11.4 dB/cm at λ = 4.28 µm. The influence of native oxidation and ageing on the propagation losses was investigated. Limit of detection (LoD) of 1000 ppm is obtained with the waveguide sensor at the carbon dioxide (CO2) absorption peak at λ = 4.28 µm.

Praseodymium-Doped Ge20In5Sb10Se65 Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic Circuits.

In this paper, we report on the infrared luminescence of amorphous praseodymium-doped Ge20In5Sb10Se65 waveguides, which can be used as infrared sources in photonic integrated circuits on silicon substrates. Amorphous chalcogenide thin films were deposited by radiofrequency magnetron cosputtering using an argon plasma whose deposition parameters were optimized for chalcogenide materials. The micropatterning as ridge waveguides of the chalcogenide cosputtered films was performed using photolithography and plasma-coupled reactive ion etching techniques. The influence of the rare earth concentration within those thin films on their optical properties and rare earth spectroscopic properties was investigated. Using an excitation wavelength of 1.55 µm, the mid-infrared luminescence of Pr3+ ions from 2.5 to 5.5 µm was clearly demonstrated for studied chalcogenide materials. A wide range of waveguide widths and doping ratios were tested, assessing the ability of the cosputtering technique to preserve the luminescence properties of the rare earth ions initially observed in the bulk glass through the thin-film deposition and patterning process.

Carbon dioxide mid-infrared sensing based on Dy3+-doped chalcogenide waveguide photoluminescence.

Climate-active gases, notably carbon dioxide (CO2), methane (CH4), and nitrous oxide (N2O), display fundamental absorption bands in the mid-infrared (mid-IR). The detection and monitoring of those gases could be enabled by the development of mid-IR optical sources. Broadband mid-IR on-chip light emission from rare-earth-doped chalcogenide photonic integrated circuits could provide a compact, efficient, and cost-effective gas sensing solution. Mid-IR photoluminescence of dysprosium-doped selenide ridge waveguides obtained under optical pumping at a telecommunication wavelength (∼1.3 µm) is investigated for Dy3+ ion concentrations in the 2500-10,000 ppmw range. CO2 detection at around 4.3 µm is then demonstrated based on absorption of this broadband mid-IR emission.

Surface Functionalization with Polymer Membrane or SEIRA Interface to Improve the Sensitivity of Chalcogenide-Based Infrared Sensors Dedicated to the Detection of Organic Molecules.

Priority substances likely to pollute water can be characterized by mid-infrared spectroscopy based on their specific absorption spectral signature. In this work, the detection of volatile aromatic molecules in the aqueous phase by evanescent-wave spectroscopy has been optimized to improve the detection efficiency of future in situ optical sensors based on chalcogenide waveguides. To this end, a hydrophobic polymer was deposited on the surface of a zinc selenide prism using drop and spin-coating methods. To ensure that the water absorption bands will be properly attenuated for the selenide waveguides, two polymers were selected and compared: polyisobutylene and ethylene/propylene copolymer coating. The system was tested with benzene, toluene, and ortho-, meta-, and para-xylenes at concentrations ranging from 10 ppb to 40 ppm, and the measured detection limit was determined to be equal to 250 ppb under these analytical conditions using ATR-FTIR. The polyisobutylene membrane is promising for pollutant detection in real waters due to the reproducibility of its deposition on selenide materials, the ease of regeneration, the short response time, and the low ppb detection limit, which could be achieved with the infrared photonic microsensor based on chalcogenide materials. To improve the sensitivity of future infrared microsensors, the use of metallic nanostructures on the surface of chalcogenide waveguides appears to be a relevant way, thanks to the plasmon resonance phenomena. Thus, in addition to preliminary surface-enhanced infrared absorption tests using these materials and a functionalization via a self-assembled monolayer of 4-nitrothiophenol, heterostructures combining gold nanoparticles/chalcogenide waveguides have been successfully fabricated with the aim of proposing a SEIRA microsensor device.

Co-sputtered Pr3+-doped Ga-Ge-Sb-Se active waveguides for mid-infrared operation.

This work reports on the properties of luminescent waveguides based on quaternary Ga-Ge-Sb-Se amorphous thin films doped with praseodymium. The waveguides were fabricated via magnetron co-sputtering, followed by inductively coupled plasma reactive ion etching. The initial thin film thickness and optical properties were assessed and the spectroscopic properties of the waveguides were measured. The measurements show promising results-it is possible to obtain mid-infrared fluorescence at 2.5 and 4.5 µm by injecting near-infrared light at 1.5 µm as the pump beam. By comparing waveguides with various praseodymium concentrations, the optimal doping content for maximum fluorescence intensity was identified to be close to 4100 ppmw. Finally, correlation between the intensity of mid-infrared emission and the width/length of the waveguide is shown.

Design of praseodymium-doped chalcogenide micro-disk emitting at 4.7 µm.

A compact amplifier based on chalcogenide Pr3+-doped micro-disk coupled to two ridge waveguides is designed and refined by means of a home-made computer code. The gain G ≈ 7.9 dB is simulated for a Pr3+ concentration of 10 000 ppm, input signal power of -30 dBm at the wavelength 4.7 µm and input pump power of 50 mW at the wavelength 1.55 µm. In the laser behavior, i.e. without input signal, the maximum slope efficiency S = 8.1 × 10-4 is obtained for an input pump power of 2 mW. This value is about six times higher than that simulated for an optimized erbium-doped micro-disk.

Optical characterization at 7.7 µm of an integrated platform based on chalcogenide waveguides for sensing applications in the mid-infrared.

A selenide integrated platform working in the mid-infrared was designed, fabricated and optically characterized at 7.7 µm. Ge-Sb-Se multilayered structures were deposited by RF magnetron sputtering. Using i-line photolithography and fluorine-based reactive ion etching, ridge waveguides were processed as Y-junction, spiral and S-shape waveguides. Single-mode optical propagation at 7.7 µm was observed by optical near-field imaging and optical propagation losses of 2.5dB/cm are measured. Limits of detection of 14.2 ppm and 1.6 ppm for methane and nitrous oxide, respectively, could be potentially measured by using this platform as an evanescent field sensor. Hence, these technological, experimental and theoretical results represent a first step towards the development of an integrated optical sensor operating in the mid-infrared wavelength range.

Guided Photoluminescence from Integrated Carbon-Nanotube-Based Optical Waveguides.

Thin films and ridge waveguides based on large-diameter semiconducting single-wall carbon nanotubes (s-SWCNTs) dispersed in a polyfluorene derivative are fabricated and optically characterized. Ridge waveguides are designed with appropriate dimensions for single-mode propagation at 1550 nm. Using multimode ridge waveguides, guided s-SWCNT photoluminescence is demonstrated for the first time in the near-infrared telecommunications window.