ABSTRACT
It is commonly assumed that charge-carrier transport in doped π-conjugated polymers is dominated by one type of charge carrier, either holes or electrons, as determined by the chemistry of the dopant. Here, through Seebeck coefficient and Hall effect measurements, we show that mobile electrons contribute substantially to charge-carrier transport in π-conjugated polymers that are heavily p-doped with strong electron acceptors. Specifically, the Seebeck coefficient of several p-doped polymers changes sign from positive to negative as the concentration of the oxidizing agents FeCl3 or NOBF4 increase, and Hall effect measurements for the same p-doped polymers reveal that electrons become the dominant delocalized charge carriers. Ultraviolet and inverse photoelectron spectroscopy measurements show that doping with oxidizing agents results in elimination of the transport gap at high doping concentrations. This approach of heavy p-type doping is demonstrated to provide a promising route to high-performance n-type organic thermoelectric materials.
ABSTRACT
Interfacial chemistry and energetics significantly impact the performance of photovoltaic devices. In the case of Pb-containing organic metal halide perovskites, photoelectron spectroscopy has been used to determine the energetic alignment of frontier electronic energy levels at various interfaces present in the photovoltaic device. For the Sn-containing analogues, which are less toxic, no such measurements have been made. Through a combination of ultraviolet, inverse, and X-ray photoelectron spectroscopy (UPS, IPES, and XPS, respectively) measurements taken at varying thickness increments during stepwise deposition of C60 on FASnI3, we present the first direct measurements of the frontier electronic energy levels across the FASnI3/C60 interface. The results show band bending in both materials and transport gap widening in FASnI3 at the interface with C60. The XPS results show that iodide diffuses into C60 and results in n-doping of C60. This iodide diffusion out of FASnI3 impacts the valence and conduction band energies of FASnI3 more than the core levels, with the core level shifts displaying a different trend than the valence and conduction bands. Surface treatment of FASnI3 with carboxylic acids and bulky ammonium substituted surface ligands results in slight alterations in the interfacial energetics, and all surface ligands result in similar or improved PV performance relative to the untreated devices. The greatest PV stability results from treatment with a fluorinated carboxylic acid derivative; however, iodide diffusion is still observed to occur with this surface ligand.
ABSTRACT
Organometal halide perovskite photovoltaics typically contain both electron and hole transport layers, both of which influence charge extraction and recombination. The ionization energy (IE) of the hole transport layer (HTL) is one important material property that will influence the open-circuit voltage, fill factor, and short-circuit current. Herein, we introduce a new series of triarylaminoethynylsilanes with adjustable IEs as efficient HTL materials for methylammonium lead iodide (MAPbI3) perovskite based photovoltaics. The three triarylaminoethynylsilanes investigated can all be used as HTLs to yield PV performance on par with the commonly used HTLs PEDOT:PSS and Spiro-OMeTAD in inverted architectures (i.e., HTL deposited prior to the perovskite layer). We further investigate the influence of the HTL IE on the photovoltaic performance of MAPbI3 based inverted devices using two different MAPbI3 processing methods with a series of 11 different HTL materials, with IEs ranging from 4.74 to 5.84 eV. The requirements for the HTL IE change based on whether MAPbI3 is formed from lead acetate, Pb(OAc)2, or PbI2 as the Pb source. The ideal HTL IE range is between 4.8 and 5.3 eV for MAPbI3 processed from Pb(OAc)2, while with PbI2 the PV performance is relatively insensitive to variations in the HTL IE between 4.8 and 5.8 eV. Our results suggest that contradictory findings in the literature on the effect of the HTL IE in perovskite photovoltaics stem partly from the different processing methods employed.
