Fabrication of spectrally sharp Si-based dielectric resonators: combining etaloning with Mie resonances.

We use low-resolution optical lithography joined with solid state dewetting of crystalline, ultra-thin silicon on insulator (c-UT-SOI) to form monocrystalline, atomically smooth, silicon-based Mie resonators in well-controlled large periodic arrays. The dewetted islands have a typical size in the 100 nm range, about one order of magnitude smaller than the etching resolution. Exploiting a 2 µm thick SiO2 layer separating the islands and the underlying bulk silicon wafer, we combine the resonant modes of the antennas with the etalon effect. This approach sets the resonance spectral position and improves the structural colorization and the contrast between scattering maxima and minima of individual resonant antennas. Our results demonstrate that templated dewetting enables the formation of defect-free, faceted islands that are much smaller than the nominal etching resolution and that an appropriate engineering of the substrate improves their scattering properties. These results are relevant to applications in spectral filtering, structural color and beam steering with all-dielectric photonic devices.

Promoting the well-being of mothers with multidisciplinary psychosocial interventions in the perinatal period.

BACKGROUND: Antenatal depressive and anxiety symptoms are common and may persist over time after delivery, with negative consequences on the mothers and their children. Evidence on the efficacy of psychological and pharmacological interventions during pregnancy aimed at preventing post-partum depression is controversial. METHODS: A consecutive sample of 318 women presenting for scheduled obstetric visits during pregnancy was screened for risk factors and anxiety or depressive symptoms. Based on the screening results, women were classified into three groups at increasing risk of post-partum depression (PPD) and were offered different interventions. RESULTS: Depressive or anxiety symptoms were found in 91 (28.6%) women, 89 (28.0%) had low risk of PPD and 138 (43.4%) had no risk of PPD. The multidisciplinary psychosocial interventions offered to women with clinical symptoms were well accepted, with an uptake of 76/91 (83.5%). Thirty-three women who did not improve with psychotherapy were offered sertraline or paroxetine as a second-line treatment: 7 accepted and 26 (78.8%) refused. Eleven women already on medication at baseline continued their treatment along with the MPI. The MPI interventions had some positive effects in terms of post-partum recovery, symptom reduction, and in preventing a new onset of depression. Among the 227 non-symptomatic during pregnancy, only 5 (2.2%) developed symptoms in the post-partum period. At 12 months post-partum, 84.6% of women who were symptomatic at 2 months post-partum recovered. LIMITATIONS: Our results should be interpreted in light of important limitations, including the lack of a control group that was not offered the MPI, the lack of information on the reasons for refusal and discontinuation and on the number of psychotherapy sessions attended. CONCLUSIONS: Our findings underscore the potential usefulness of MPI in recognizing early signs or symptoms during pregnancy and the advantage of building specific interventions for preventing post-natal depression. The MPI has positive effects on women with depressive or anxiety symptoms during pregnancy, that however did not exceed significantly those observed in women who refused the intervention. Thus, in the absence of a control group, our results are preliminary and warrant confirmation and testing in future randomized clinical trials.

Anisotropic extended misfit dislocations in overcritical SiGe films by local substrate patterning.

In this work we will show how local substrate patterning leads to a long range controlled propagation of dislocations in SiGe films grown on Si(001) substrates. Dislocations preferentially nucleate in the inhomogeneous strain field associated with the patterned pits, and then partialize on the local (111) surfaces which form the pit sidewalls. The resulting V-shaped defects extend for several microns and effectively block the propagation of randomly nucleated dislocations which propagate in the perpendicular direction. The surface morphology and strain fields associated with the extended defects have been characterized by atomic force microscopy and µRaman spectroscopy, and the defects have been directly observed with high resolution transmission electron microscopy.

Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates.

We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations.

Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source.

In this paper we experimentally study the growth of self-assembled SiGe islands formed on Si(001) by exploiting the thermally activated surface diffusion of Ge atoms from a local Ge source stripe in the temperature range 600-700 °C. This new growth strategy allows us to vary continuously the Ge coverage from 8 to 0 monolayers as the distance from the source increases, and thus enables the investigation of the island growth over a wide range of dynamical regimes at the same time, providing a unique birds eye view of the factors governing the growth process and the dominant mechanism for the mass collection by a critical nucleus. Our results give experimental evidence that the nucleation process evolves within a diffusion limited regime. At a given annealing temperature, we find that the nucleation density depends only on the kinetics of the Ge surface diffusion resulting in a universal scaling distribution depending only on the Ge coverage. An analytical model is able to reproduce quantitatively the trend of the island density. Following the nucleation, the growth process appears to be driven mainly by short-range interactions between an island and the atoms diffusing within its vicinities. The islands volume distribution is, in fact, well described in the whole range of parameters by the Mulheran's capture zone model. The complex growth mechanism leads to a strong intermixing of Si and Ge within the island volume. Our growth strategy allows us to directly investigate the correlation between the Si incorporation and the Ge coverage in the same experimental conditions: higher intermixing is found for lower Ge coverage. This confirms that, besides the Ge gathering from the surface, also the Si incorporation from the substrate is driven by the diffusion kinetics, thus imposing a strict constraint on the initial Ge coverage, its diffusion properties and the final island volume.

Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction.

The continued downscaling in SiGe heterostructures is approaching the point at which lateral confinement leads to a uniaxial strain state, giving high enhancements of the charge carrier mobility. Investigation of the strain relaxation as induced by the patterning of a continuous SiGe layer is thus of scientific and technological importance. In the present work, the strain in single lithographically defined low-dimensional SiGe structures has been directly mapped via nanobeam x-ray diffraction. We found that the nanopatterning is able to induce an anisotropic strain relaxation, leading to a conversion of the strain state from biaxial to uniaxial. Its origin is fully compatible with a pure elastic deformation of the crystal lattice without involving plastic relaxation by injection of misfit dislocations.

Ordered Arrays of SiGe Islands from Low-Energy PECVD.

SiGe islands have been proposed for applications in the fields of microelectronics, optoelectronics and thermoelectrics. Although most of the works in literature are based on MBE, one of the possible advantages of low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a wider range of deposition rates, which in turn results in the possibility of growing islands with a high Ge concentration. We will show that LEPECVD can be effectively used for the controlled growth of ordered arrays of SiGe islands. In order to control the nucleation of the islands, patterned Si (001) substrates were obtained by e-beam lithography (EBL) and dry etching. We realized periodic circular pits with diameters ranging from 80 to 300 nm and depths from 65 to 75 nm. Subsequently, thin films (0.8-3.2 nm) of pure Ge were deposited by LEPECVD, resulting in regular and uniform arrays of Ge-rich islands. LEPECVD allowed the use of a wide range of growth rates (0.01-0.1 nm s(-1)) and substrates temperatures (600-750°C), so that the Ge content of the islands could be varied. Island morphology was characterized by AFM, while µ-Raman was used to analyze the Ge content inside the islands and the composition differences between islands on patterned and unpatterned areas of the substrate.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by µRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

[Hygienic profile of the water in Milan swimming pools: a three-year comparative study]. / Profilo igienico-sanitario dell'acqua delle piscine milanesi: tre anni a confronto.

The aim of this work was to determine whether swimming pool water quality in Milan from 2006 to 2008 was within the standards established by national and local Italian laws (Circolare Min. Sanità 128/71 and DGR 2552/2006). In 2006, 580 samples of water from public swimming pools were analyzed to determine the presence of heterotrophic counts at 37 degrees and total coliforms; pH, free chlorine and chloride of each sample were also measured. In the following years, water from both public and private swimming pools were examined to measure heterotrophic count at 22 degrees and 36 degrees, Escherichia coli, enterococci, Pseudomonas aeruginosa, Staphylococcus aureus, pH, free chlorine, and nitrates. The total number of analyses carried out in 2007 and 2008 was 2074 and 1532, respectively. In 2006, the extent of noncompliance of all swimming pools that was observed for both physical/chemical and microbiological parameters was 72.3%, which then decreased to 53.2% and 36.2% in 2007 and 2008, respectively. In particular with regard to the microbiological analysis, an increase of noncompliance based on at least one parameter was determined (7.1% in 2006 vs. 21.5% in 2007 and 22% in 2008). In contrast, a decrease of the extent of noncompliance based on at least one physical/chemical parameter was observed (from 68.1% in 2006 to 40.4% and 22.3% in 2007 and 2008, respectively). Interestingly, public swimming pools exceeded the legal limits of microbiological concentration more often than the private ones, whereas both types of swimming pools showed a decrease in noncompliance with regard to the physical/chemical parameters.