ABSTRACT
In this study, we investigated the structural properties of TeO2-ZnO (TZ) and TeO2-ZnO-Au (TZA) thin films sputtered under different oxygen concentrations and either annealed or not annealed at 325 °C in air for 10 or 20 h. The lattice changes of the tellurium oxide were shown to be inherent in the polymorph properties of the α and ß phases. The ß phase was formed for null oxygen flow and the α phase was formed for different oxygen flows (0.5-7.0 sccm) during TZ and TZA sputtering. Au was encountered in its single phase or as AuTe2. The annealing had very little influence on the α and ß phases for both TZ and TZA. It is worth noting that SiO2 and orthotellurate anions are both formed for not-null oxygen flow. An electrochemical mechanism was proposed to explain the SiO2 growth at the TZ/Si or TZA/Si interface, taking the orthotellurate anion as oxidizing agent into account.
