Level set simulation of focused ion beam sputtering of a multilayer substrate.

The evolution of a multilayer sample surface during focused ion beam processing was simulated using the level set method and experimentally studied by milling a silicon dioxide layer covering a crystalline silicon substrate. The simulation took into account the redeposition of atoms simultaneously sputtered from both layers of the sample as well as the influence of backscattered ions on the milling process. Monte Carlo simulations were applied to produce tabulated data on the angular distributions of sputtered atoms and backscattered ions. Two sets of test structures including narrow trenches and rectangular boxes with different aspect ratios were experimentally prepared, and their cross sections were visualized in scanning transmission electron microscopy images. The superimposition of the calculated structure profiles onto the images showed a satisfactory agreement between simulation and experimental results. In the case of boxes that were prepared with an asymmetric cross section, the simulation can accurately predict the depth and shape of the structures, but there is some inaccuracy in reproducing the form of the left sidewall of the structure with a large amount of the redeposited material. To further validate the developed simulation approach and gain a better understanding of the sputtering process, the distribution of oxygen atoms in the redeposited layer derived from the numerical data was compared with the corresponding elemental map acquired by energy-dispersive X-ray microanalysis.

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111).

We study the cross-sectional shape of GaN nanowires (NWs) by transmission electron microscopy. The shape is examined at different heights of long NWs, as well as at the same height for NWs of different lengths. Two distinct trends in the evolution of the cross-sectional shape along the NW length are observed. At the top, merging NWs develop common {11̄00} side facets. At the bottom, the NWs acquire roundish shapes. This observation is explained by the entirely different NW environments at the top and the bottom of the NWs. At the top, NWs are exposed to the Ga and N atomic fluxes giving rise to axial growth, resulting in the equilibrium growth shape with zero growth rate at the {11̄00} facets. At the bottom, NWs are shadowed from the impinging fluxes and are only annealed, allowing them to eventually approach the equilibrium crystal shape. The study of identical samples by grazing incidence small-angle X-ray scattering independently confirms these trends in the shape evolution of the sidewall facets.

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures.

Combining graphene and the insulating hexagonal boron nitride (h-BN) into two-dimensional heterostructures is promising for novel, atomically thin electronic nanodevices. A heteroepitaxial growth, in which these materials are grown on top of each other, will be crucial for their scalable device integration. However, during this so-called van der Waals epitaxy, not only the atomically thin substrate itself must be considered but also the influences from the supporting substrate below it. Here, we report not only a substantial difference between the formation of h-BN on single- (SLG) and on bi-layer epitaxial graphene (BLG) on SiC, but also vice versa, that the van der Waals epitaxy of h-BN at growth temperatures well below 1000 °C affects the varying number of graphene layers differently. Our results clearly demonstrate that the additional graphene layer in BLG enhances the distance to the corrugated, carbon-rich interface of the supporting SiC substrate and thereby diminishes its influence on the van der Waals epitaxy, leading to a homogeneous formation of a smooth, atomically thin heterostructure, which will be required for a scalable device integration of 2D heterostructures.