Copper Silicide Nanowires as Hosts for Amorphous Si Deposition as a Route to Produce High Capacity Lithium-Ion Battery Anodes.

Herein, copper silicide (Cu15Si4) nanowires (NWs) grown in high densities from a metallic Cu substrate are utilized as nanostructured hosts for amorphous silicon (aSi) deposition. The conductive Cu15Si4 NW scaffolds offer an increased surface area, versus planar substrates, and enable the preparation of high capacity Li-ion anodes consisting of a nanostructured active material. The formation method involves a two-step process, where Cu15Si4 nanowires are synthesized from a Cu substrate via a solvent vapor growth (SVG) approach followed by the plasma-enhanced chemical vapor deposition (PECVD) of aSi. These binder-free anodes are investigated in half-cell (versus Li-foil) and full-cell (versus LCO) configurations with discharge capacities greater than 2000 mAh/g retained after 200 cycles (half-cell) and reversible capacities of 1870 mAh/g exhibited after 100 cycles (full-cell). A noteworthy rate capability is also attained where capacities of up to 1367 mAh/g and 1520 mAh/g are exhibited at 5C in half-cell and full-cell configurations, respectively, highlighting the active material's promise for fast charging and high power applications. The anode material is characterized prior to cycling and after 1, 25, and 100 charge/discharge cycles, by scanning electron microscopy (SEM) and transmission electron microscopy (TEM), to track the effects of cycling on the material.

Tunable Core-Shell Nanowire Active Material for High Capacity Li-Ion Battery Anodes Comprised of PECVD Deposited aSi on Directly Grown Ge Nanowires.

Herein, we report the formation of core@shell nanowires (NWs) comprised of crystalline germanium NW cores with amorphous silicon shells (Ge@aSi) and their performance as a high capacity Li-ion battery anode material. The Ge NWs were synthesized directly from the current collector in a solvent vapor growth (SVG) system and used as hosts for the deposition of the Si shells via a plasma-enhanced chemical vapor deposition (PECVD) process utilizing an expanding thermal plasma (ETP) source. The secondary deposition allows for the preparation of Ge@aSi core@shell structures with tunable Ge/Si ratios (2:1 and 1:1) and superior gravimetric and areal capacities, relative to pure Ge. The binder-free anodes exhibited discharge capacities of up to 2066 mAh/g and retained capacities of 1455 mAh/g after 150 cycles (for the 1:1 ratio). The 2:1 ratio showed a minimal ∼5% fade in capacity between the 20th and 150th cycles. Ex situ microscopy revealed a complete restructuring of the active material to an interconnected Si1- xGe x morphology due to repeated lithiation and delithiation. In full-cell testing, a prelithiation step counteracted first cycle Li consumption and resulted in a 2-fold improvement to the capacity of the prelithiated cell versus the unconditioned full-cells. Remarkable rate capability was also delivered where capacities of 750 mAh/g were observed at a rate of 10 C.