Solution Combustion Synthesis of Hafnium-Doped Indium Oxide Thin Films for Transparent Conductors.

Indium oxide (In2O3)-based transparent conducting oxides (TCOs) have been widely used and studied for a variety of applications, such as optoelectronic devices. However, some of the more promising dopants (zirconium, hafnium, and tantalum) for this oxide have not received much attention, as studies have mainly focused on tin and zinc, and even fewer have been explored by solution processes. This work focuses on developing solution-combustion-processed hafnium (Hf)-doped In2O3 thin films and evaluating different annealing parameters on TCO's properties using a low environmental impact solvent. Optimized TCOs were achieved for 0.5 M% Hf-doped In2O3 when produced at 400 °C, showing high transparency in the visible range of the spectrum, a bulk resistivity of 5.73 × 10-2 Ω.cm, a mobility of 6.65 cm2/V.s, and a carrier concentration of 1.72 × 1019 cm-3. Then, these results were improved by using rapid thermal annealing (RTA) for 10 min at 600 °C, reaching a bulk resistivity of 3.95 × 10 -3 Ω.cm, a mobility of 21 cm2/V.s, and a carrier concentration of 7.98 × 1019 cm-3, in air. The present work brings solution-based TCOs a step closer to low-cost optoelectronic applications.

Microwave-Assisted Synthesis of Zn2SnO4 Nanostructures for Photodegradation of Rhodamine B under UV and Sunlight.

The contamination of water resources by pollutants resulting from human activities represents a major concern nowadays. One promising alternative to solve this problem is the photocatalytic process, which has demonstrated very promising and efficient results. Oxide nanostructures are interesting alternatives for these applications since they present wide band gaps and high surface areas. Among the photocatalytic oxide nanostructures, zinc tin oxide (ZTO) presents itself as an eco-friendly alternative since its composition includes abundant and non-toxic zinc and tin, instead of critical elements. Moreover, ZTO nanostructures have a multiplicity of structures and morphologies possible to be obtained through low-cost solution-based syntheses. In this context, the current work presents an optimization of ZTO nanostructures (polyhedrons, nanoplates, and nanoparticles) obtained by microwave irradiation-assisted hydrothermal synthesis, toward photocatalytic applications. The nanostructures' photocatalytic activity in the degradation of rhodamine B under both ultraviolet (UV) irradiation and natural sunlight was evaluated. Among the various morphologies, ZTO nanoparticles revealed the best performance, with degradation > 90% being achieved in 60 min under UV irradiation and in 90 min under natural sunlight. The eco-friendly production process and the demonstrated ability of these nanostructures to be used in various water decontamination processes reinforces their sustainability and the role they can play in a circular economy.

Smart textile lighting/display system with multifunctional fibre devices for large scale smart home and IoT applications.

Smart textiles consist of discrete devices fabricated from-or incorporated onto-fibres. Despite the tremendous progress in smart textiles for lighting/display applications, a large scale approach for a smart display system with integrated multifunctional devices in traditional textile platforms has yet to be demonstrated. Here we report the realisation of a fully operational 46-inch smart textile lighting/display system consisting of RGB fibrous LEDs coupled with multifunctional fibre devices that are capable of wireless power transmission, touch sensing, photodetection, environmental/biosignal monitoring, and energy storage. The smart textile display system exhibits full freedom of form factors, including flexibility, bendability, and rollability as a vivid RGB lighting/grey-level-controlled full colour display apparatus with embedded fibre devices that are configured to provide external stimuli detection. Our systematic design and integration strategies are transformational and provide the foundation for realising highly functional smart lighting/display textiles over large area for revolutionary applications on smart homes and internet of things (IoT).

Secondary Hepatic Injury in Pediatric Intensive Care: Risk Factors and Prognostic Impact.

OBJECTIVES: The aim of this study was to assess the profile of secondary hepatic injury (SHI), to determine risk factors and to evaluate its impact on prognosis of pediatric intensive care patients. METHODS: An exploratory observational and retrospective study was conducted in a Pediatric Intensive Care Unit. Two groups were defined: with SHI [alanine aminotransferase (ALT) ≥100 IU/L or gamma glutamyl transpeptidase (GGT)≥100 IU/L or direct bilirubin ≥30 µmol/L] and without. SHI was divided into 3 patterns: cytolysis, cholestasis, and mixed. RESULTS: SHI occurred in 16.5%, cytolysis in 5%, cholestasis in 4%, and mixed pattern in 7%. Independent risk factors for SHI were: organ dysfunction score PELOD-2 in D1 in cytolysis (n = 28); total parenteral nutrition and Pediatric Index of Mortality 3 (PIM3) in cholestasis (n = 23); sepsis, oncologic comorbidities, PIM3, and respiratory dysfunction in mixed pattern (n = 37). The ALT was an independent risk factor and a good predictor of mortality (AUC = 0.865) with a cut-off of 137 IU/L. CONCLUSIONS: SHI was associated with worst prognostic. ALT may be useful for detecting patients at increased risk of death, probably being a surrogate marker of the illness severity, reflecting a secondary injury.

Recent Progress in Solution-Based Metal Oxide Resistive Switching Devices.

Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra-low power and high-density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up-scale production. Solution-processing methods have been improved, being now a reliable technology that offers many advantages for resistive random-access memory (RRAM) such as high versatility, large area uniformity, transparency, low-cost and a simple fabrication of two-terminal structures. Solution-based metal oxide RRAM devices are emergent and promising non-volatile memories for future electronics. In this review, a brief history of non-volatile memories is highlighted as well as the present status of solution-based metal oxide resistive random-access memory (S-RRAM). Then, a focus on describing the solution synthesis parameters of S-RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S-RRAM that will allow their large-area manufacturing. Finally, the figures of merit and the main challenges in S-RRAMs are discussed and future trends are proposed.

Piezoelectricity Enhancement of Nanogenerators Based on PDMS and ZnSnO3 Nanowires through Microstructuration.

The current trend for smart, self-sustainable, and multifunctional technology demands for the development of energy harvesters based on widely available and environmentally friendly materials. In this context, ZnSnO3 nanostructures show promising potential because of their high polarization, which can be explored in piezoelectric devices. Nevertheless, a pure phase of ZnSnO3 is hard to achieve because of its metastability, and obtaining it in the form of nanowires is even more challenging. Although some groups have already reported the mixing of ZnSnO3 nanostructures with polydimethylsiloxane (PDMS) to produce a nanogenerator, the resultant polymeric film is usually flat and does not take advantage of an enhanced piezoelectric contribution achieved through its microstructuration. Herein, a microstructured composite of nanowires synthesized by a seed-layer free hydrothermal route mixed with PDMS (ZnSnO3@PDMS) is proposed to produce nanogenerators. PFM measurements show a clear enhancement of d33 for single ZnSnO3 versus ZnO nanowires (23 ± 4 pm/V vs 9 ± 2 pm/V). The microstructuration introduced herein results in an enhancement of the piezoelectric effect of the ZnSnO3 nanowires, enabling nanogenerators with an output voltage, current, and instantaneous power density of 120 V, 13 µA, and 230 µW·cm-2, respectively. Even using an active area smaller than 1 cm2, the performance of this nanogenerator enables lighting up multiple LEDs and other small electronic devices, thus proving great potential for wearables and portable electronics.

Solution Combustion Synthesis: Towards a Sustainable Approach for Metal Oxides.

Solution combustion synthesis (SCS) has been widely used to produce simple and complex oxides with a desired morphology (size and shape). SCS is valuable due to low cost, simplicity and energy efficient synthesis. To guarantee the best molecular-level mixing of reactants in an aqueous or solvent-based solution some parameters need to be controlled, such as fuel type, metal cations precursors, stoichiometry ratio (φ), pH effect, atmosphere and initiation type. These determine the final properties of the oxide materials, providing the potential to reach different morphologies, which are essential for their final applications. This Review article focuses on the crucial parameters in SCS and how these affect the overall materials properties from nanostructures to thin films. To finalize, special attention is given to the application of SCS to form metal oxide thin films at low temperature and their application in thin film transistors (TFTs).

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors.

Solution-processed metal oxides have been investigated as an alternative to vacuum-based oxides to implement low-cost, high-performance electronic devices on flexible transparent substrates. However, their electrical properties need to be enhanced to apply at industrial scale. Amorphous indium-gallium-zinc oxide (a-IGZO) is the most-used transparent semiconductor metal oxide as an active channel layer in thin-film transistors (TFTs), due to its superior electrical properties. The present work evaluates the influence of composition, thickness and ageing on the electrical properties of solution a-IGZO TFTs, using solution combustion synthesis method, with urea as fuel. After optimizing the semiconductor properties, low-voltage TFTs were obtained by implementing a back-surface passivated 3-layer In:Ga:Zn 3:1:1 with a solution-processed high-к dielectric; AlOx. The devices show saturation mobility of 3.2 cm2 V-1 s-1, IOn/IOff of 106, SS of 73 mV dec-1 and VOn of 0.18 V, thus demonstrating promising features for low-cost circuit applications.

Growth Mechanism of Seed-Layer Free ZnSnO3 Nanowires: Effect of Physical Parameters.

ZnSnO3 semiconductor nanostructures have several applications as photocatalysis, gas sensors, and energy harvesting. However, due to its multicomponent nature, the synthesis is far more complex than its binary counter parts. The complexity increases even more when aiming for low-cost and low-temperature processes as in hydrothermal methods. Knowing in detail the influence of all the parameters involved in these processes is imperative, in order to properly control the synthesis to achieve the desired final product. Thus, this paper presents a study of the influence of the physical parameters involved in the hydrothermal synthesis of ZnSnO3 nanowires, namely volume, reaction time, and process temperature. Based on this study a growth mechanism for the complex Zn:Sn:O system is proposed. Two zinc precursors, zinc chloride and zinc acetate, were studied, showing that although the growth mechanism is inherent to the material itself, the chemical reactions for different conditions need to be considered.

Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters.

Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 °C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn2SnO4 nanoparticles and ZnSnO3 nanowires with length ∼600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO3 and Zn2SnO4, respectively, and a resistivity of 1.42 kΩ·cm for single ZnSnO3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.

Critical role of a double-layer configuration in solution-based unipolar resistive switching memories.

Lately, resistive switching memories (ReRAM) have been attracting a lot of attention due to their possibilities of fast operation, lower power consumption and simple fabrication process and they can also be scaled to very small dimensions. However, most of these ReRAM are produced by physical methods and nowadays the industry demands more simplicity, typically associated with low cost manufacturing. As such, ReRAMs in this work are developed from a solution-based aluminum oxide (Al2O3) using a simple combustion synthesis process. The device performance is optimized by two-stage deposition of the Al2O3 film. The resistive switching properties of the bilayer devices are reproducible with a yield of 100%. The ReRAM devices show unipolar resistive switching behavior with good endurance and retention time up to 105 s at 85 °C. The devices can be programmed in a multi-level cell operation mode by application of different reset voltages. Temperature analysis of various resistance states reveals a filamentary nature based on the oxygen vacancies. The optimized film was stacked between ITO and indium zinc oxide, targeting a fully transparent device for applications on transparent system-on-panel technology.

Boosting Electrical Performance of High-κ Nanomultilayer Dielectrics and Electronic Devices by Combining Solution Combustion Synthesis and UV Irradiation.

In the past decade, solution-based dielectric oxides have been widely studied in electronic applications enabling the use of low-cost processing technologies and device improvement. The most promising are the high-κ dielectrics, like aluminum (AlOx) and hafnium oxide (HfOx), that allow an easier trap filling in the semiconductor and the use of low operation voltage. However, in the case of HfOx, a high temperature usually is needed to induce a uniform and condensed film, which limits its applications in flexible electronics. This paper describes how to obtain HfOx dielectric thin films and the effect of their implementation in multilayer dielectrics (MLD) at low temperatures (150 °C) to apply in thin film transistors (TFTs) using the combination of solution combustion synthesis (SCS) and ultraviolet (UV) treatment. The single layers and multilayers did not show any trace of residual organics and exhibited a small surface roughness (<1.2 nm) and a high breakdown voltage (>2.7 MV·cm-1). The resulting TFTs presented a high performance at a low operation voltage (<3 V), with high saturation mobility (43.9 ± 1.1 cm2·V-1·s-1), a small subthreshold slope (0.066 ± 0.010 V·dec-1), current ratio of 1 × 106 and a good idle shelf life stability after 2 months. To our knowledge, the results achieved surpass the actual state-of-the-art. Finally, we demonstrated a low-voltage diode-connected inverter using MLD/IGZO TFTs working with a maximum gain of 1 at 2 V.

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors.

Solution processing of amorphous metal oxides has lately been used as an option to implement in flexible electronics, allowing a reduction of the associated costs and high performance. However, the research has focused more on the semiconductor layer rather than on the insulator layer, which is related to the stability and performance of the devices. This work aims to evaluate amorphous aluminum oxide thin films produced by combustion synthesis and the influence of far-ultraviolet (FUV) irradiation on the properties of the insulator on thin-film transistors (TFTs) using different semiconductors, in order to have compatibility with flexible substrates. An optimized dielectric layer was obtained for an annealing of 30 min assisted by FUV exposure. These thin films were applied in gallium-indium-zinc oxide TFTs as dielectrics showing the best results for TFTs annealed at 180 °C with FUV irradiation: good reproducibility with a subthreshold slope of 0.11 ± 0.01 V dec -1 and a turn-on voltage of -0.12 ± 0.05 V, low operating voltage, and good stability over time. Finally, the dielectric layer was applied in solution-processed indium oxide (In2O3) TFTs at low temperature, 180 °C, with a short processing time being compatible with flexible electronic applications.

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Aqueous combustion synthesis of aluminum oxide thin films and application as gate dielectric in GZTO solution-based TFTs.

Solution processing has been recently considered as an option when trying to reduce the costs associated with deposition under vacuum. In this context, most of the research efforts have been centered in the development of the semiconductors processes nevertheless the development of the most suitable dielectrics for oxide based transistors is as relevant as the semiconductor layer itself. In this work we explore the solution combustion synthesis and report on a completely new and green route for the preparation of amorphous aluminum oxide thin films; introducing water as solvent. Optimized dielectric layers were obtained for a water based precursor solution with 0.1 M concentration and demonstrated high capacitance, 625 nF cm(-2) at 10 kHz, and a permittivity of 7.1. These thin films were successfully applied as gate dielectric in solution processed gallium-zinc-tin oxide (GZTO) thin film transistors (TFTs) yielding good electrical performance such as subthreshold slope of about 0.3 V dec(-1) and mobility above 1.3 cm2 V(-1) s(-1).

Ion sensing (EIS) real-time quantitative monitorization of isothermal DNA amplification.

Field-effect-based devices are becoming a basic structural element in a new generation of microbiosensors. Reliable molecular characterization of DNA and/or RNA is of paramount importance for disease diagnostics and to follow up alterations in gene expression profiles. The use of such devices for point-of-need diagnostics has been hindered by the need of standard or real-time PCR amplification procedures. The present work focuses on the development of a tantalum pentoxide (Ta2O5) based sensor for the real-time label free detection of DNA amplification via loop mediated isothermal amplification (LAMP) allowing for quantitative analysis of the cMYC proto-oncogene. The strategy based on the field effect sensor was tested within a range of 1 × 10(8)-10(11) copies of target DNA, and a linear relationship between the log copy number of the initial template DNA and threshold time was observed allowing for a semi-quantitative analysis of DNA template. The concept offers many of the advantages of isothermal quantitative real-time DNA amplification in a label free approach and may pave the way to point-of-care quantitative molecular analysis focused on ease of use and low cost.

Real-time monitoring of PCR amplification of proto-oncogene c-MYC using a Ta2O5 electrolyte-insulator-semiconductor sensor.

We present a new approach for real-time monitoring of PCR amplification of a specific sequence from the human c-MYC proto-oncogene using a Ta(2)O(5) electrolyte-insulator-semiconductor (EIS) sensor. The response of the fabricated EIS sensor to cycle DNA amplification was evaluated and compared to standard SYBR-green fluorescence incorporation, showing it was possible to detect DNA concentration variations with 30 mV/µM sensitivity. The sensor's response was then optimized to follow in real-time the PCR amplification of c-MYC sequence from a genomic DNA sample attaining an amplification profile comparable to that of a standard real-time PCR. Owing to the small size, ease of fabrication and low-cost, the developed Ta(2)O(5) sensor may be incorporated onto a microfluidic device and then used for real-time PCR. Our approach may circumvent the practical and economical obstacles posed by current platforms that require an external fluorescence detector difficult to miniaturize and incorporate into a lab-on-chip system.