Phase transitions and pattern formation in ensembles of phase-amplitude solitons in quasi-one-dimensional electronic systems.

Most common types of symmetry breaking in quasi-one-dimensional electronic systems possess a combined manifold of states degenerate with respect to both the phase θ and the amplitude A sign of the order parameter Aexp(iθ). These degrees of freedom can be controlled or accessed independently via either the spin polarization or the charge densities. To understand statistical properties and the phase diagram in the course of cooling under the controlled parameters, we present here an analytical treatment supported by Monte Carlo simulations for a generic coarse-grained two-field model of XY-Ising type. The degeneracies give rise to two coexisting types of topologically nontrivial configurations: phase vortices and amplitude kinks, i.e., the solitons. In two- and three-dimensional states with long-range (or Berezinskii--Kosterlitz--Thouless-type) orders, the topological confinement sets in at a temperature T=T_{1} which binds together the kinks and unusual half-integer vortices. At a lower T=T_{2}, the solitons start to aggregate into walls formed as rods of amplitude kinks which are ultimately terminated by half-integer vortices. With lowering T, the walls multiply, passing sequentially across the sample. The presented results indicate a possible physical realization of a peculiar system of half-integer vortices with rods of amplitude kinks connecting their cores. Its experimental realization becomes feasible in view of recent successes in real-space observations and even manipulations of domain walls in correlated electronic systems.

Fast electronic resistance switching involving hidden charge density wave states.

The functionality of computer memory elements is currently based on multi-stability, driven either by locally manipulating the density of electrons in transistors or by switching magnetic or ferroelectric order. Another possibility is switching between metallic and insulating phases by the motion of ions, but their speed is limited by slow nucleation and inhomogeneous percolative growth. Here we demonstrate fast resistance switching in a charge density wave system caused by pulsed current injection. As a charge pulse travels through the material, it converts a commensurately ordered polaronic Mott insulating state in 1T-TaS2 to a metastable electronic state with textured domain walls, accompanied with a conversion of polarons to band states, and concurrent rapid switching from an insulator to a metal. The large resistance change, high switching speed (30 ps) and ultralow energy per bit opens the way to new concepts in non-volatile memory devices manipulating all-electronic states.

Ultrafast switching to a stable hidden quantum state in an electronic crystal.

Hidden states of matter may be created if a system out of equilibrium follows a trajectory to a state that is inaccessible or does not exist under normal equilibrium conditions. We found such a hidden (H) electronic state in a layered dichalcogenide crystal of 1T-TaS2 (the trigonal phase of tantalum disulfide) reached as a result of a quench caused by a single 35-femtosecond laser pulse. In comparison to other states of the system, the H state exhibits a large drop of electrical resistance, strongly modified single-particle and collective-mode spectra, and a marked change of optical reflectivity. The H state is stable until a laser pulse, electrical current, or thermal erase procedure is applied, causing it to revert to the thermodynamic ground state.

Coherent topological defect dynamics and collective modes in superconductors and electronic crystals.

The control of condensed matter systems out of equilibrium by laser pulses allows us to investigate the system trajectories through symmetry-breaking phase transitions. Thus the evolution of both collective modes and single-particle excitations can be followed through diverse phase transitions with femtosecond resolution. Here we present experimental observations of the order parameter trajectory in the normal â†’ superconductor transition and charge density wave ordering transitions. Of particular interest is the coherent evolution of topological defects forming during the transition via the Kibble-Zurek mechanism, which appears to be measurable in optical pump-probe experiments. Experiments on CDW systems reveal some new phenomena, such as coherent oscillations of the order parameter, the creation and emission of dispersive amplitude modes upon the annihilation of topological defects, and mixing with weakly coupled finite frequency (massive) bosons.

Hall effect in the pinned and sliding charge density wave state of NbSe(3).

Results of Hall effect measurements are reported both below and above the threshold electric field, E(t), for depinning the low temperature charge density wave (CDW) in NbSe(3) in a wide temperature range. At low electric fields, below E(t), we have observed a change in the sign of the Hall voltage at all temperatures lower than T(p2). Comparison between the Hall effect and the magnetoresistance behavior indicates that the n-type conductivity in the low magnetic field range differs qualitatively from the p-type conductivity in the high field range. We demonstrate that at low temperature the CDW motion significantly alters the Hall voltage. These results indicate that, in NbSe(3), the CDW in the sliding state interacts essentially with holes. Possible mechanisms of this effect are discussed.

Subgap collective tunneling and its staircase structure in charge density waves.

Tunneling spectra of chain materials NbSe3 and TaS3 were studied in nanoscale mesa devices. Current-voltage I-V characteristics related to all charge density waves (CDWs) reveal universal spectra within the normally forbidden region of low V, below the electronic CDW gap 2Delta. The tunneling always demonstrates a threshold Vt approximately 0.2Delta, followed, for both CDWs in NbSe3, by a staircase fine structure. T dependencies of Vt(T) and Delta(T) scale together for each CDW, while the low T values Vt(0) correlate with the CDWs' transition temperatures Tp. Fine structures of CDWs perfectly coincide when scaled along V/Delta. The results evidence the sequential entering of CDW vortices (dislocations) in the junction area with the tunneling current concentrated in their cores. The subgap tunneling proceeds via the phase channel: coherent phase slips at neighboring chains.

Observation of charge density wave solitons in overlapping tunnel junctions.

We report on direct observation of microscopic solitons in single electronic processes of the coherent interlayer tunneling in charge density waves. Special nanoscale devices were fabricated from the chain compound using focused ion beams. The spectra were drastically refined by working at high (up to 27 T) magnetic fields. Internal quantum tunneling of electrons can go through solitons that are energetically more favorable quantum particles than electrons. In addition to the interband tunneling across the gap 2Delta, we observe a clear peak at the intermediate voltage approximately 2Delta/3, which we associate with the creation of microscopic solitons, the energy of which must be 2Delta/pi. These solitons might correspond to the long sought special quasiparticle--the spinon.

Sliding-induced decoupling and charge transfer between the coexisting Q1 and Q2 charge density waves in NbSe3.

Using high-resolution x-ray scattering in the presence of an applied current, we report evidence for a dynamical decoupling between the two NbSe3 charge-density waves (CDWs), Q1 (T(C1)=145 K) and Q2 (T(C2)=59 K), coexisting below T(C2). Simultaneous and oppositely directed shifts of the relevant CDW superlattice spots develop above a threshold current which we identify as the depinning threshold I(C1) for the more strongly pinned upper CDW Q1 (I(C1) approximately 10I(C2)). In contrast with shifts induced by current conversion processes, the present effect is not current polarized and is not limited to the current-contact regions. We propose a model which explains this instability through a sliding-induced charge transfer between the two electronic reservoirs corresponding to the Q1 and Q2 CDWs.

Ferroelectric Mott-Hubbard phase of organic (TMTTF)2X conductors.

We present experimental evidence and a corresponding theory for the ferroelectric transition in the family of quasi-one-dimensional conductors (TMTTF)2X. We interpret this new transition in the frame of the combined Mott-Hubbard state taking into account the double action of the spontaneous charge disproportionation on the TMTTF molecular stacks and of the X anionic potentials.