Structure and electron affinity of the 4H-SiC (0001) surfaces: a methodological approach for polar systems.

The ability to accurately and consistently determine the surface electronic properties of polar materials is of great importance for device applications. Polar surface modelling is fundamentally limited by the spontaneous polarisation of these materials in a periodic boundary condition scheme. Surface data are sensitive to supercell parameters, including slab and vacuum thicknesses, as well as the non-equivalence of surface adsorbates on opposite surfaces. Using 4H-SiC as a specific case, this study explores calculation of electron affinities (EAs) of (0001̄) and (0001) surfaces varying chemical termination as a function of computational parameters. We report the impact in terms of band-gap, electric fields across the vacuum and slab for single and double cell slab models, where the latter is constructed with inversional symmetry to eliminate the electric field in the vacuum regions. We find that single cells are sensitive to both slab and vacuum thickness. The band-gap narrows with slab thickness, ultimately vanishing and inducing charge transfer between opposite surfaces. This has a consequence for predicted EAs. Adsorbate species are found to play a crucial role in the rate of narrowing. Back to back cells with inversional symmetry have larger electric fields present across the slab than the single slab cases, resulting in a greater band-gap narrowing effect, but the vacuum thickness dependence is completely removed. We discuss the relative merits of the two approaches.

Silicon and germanium terminated (0 0 1)-(2 [Formula: see text] 1) diamond surface.

Control over the chemical termination of diamond surfaces has shown great promise in the realization of field-emission applications, the selection of charge states of near-surface colour-centres such as NV, and the realisation of surface-conductive channels for electronic device applications. Experimental investigations of ultra-thin Si and Ge layers yield surface states both within the band-gap and resonant with the underlying diamond valence band. In this report, we report the results of density-functional simulations of a range of coverages of Si and Ge on diamond (0 0 1) surfaces. We have found that surface coverage with crystallogen:carbon ratios of 67% and 75% are more stable than both higher and lower coverages on the (0 0 1)-diamond surface, and that they can explain the observation of an occupied band around 1.7 eV below the valence band top. We also report geometries, adsorption energies and electron affinities of these surface structures, and show that the resonant state is made up from conventional spd-covalent [Formula: see text]-bonding orbitals between the surface adsorbates.

Interlayer vacancy defects in AA-stacked bilayer graphene: density functional theory predictions.

AA-stacked graphite and closely related structures, where carbon atoms are located in registry in adjacent graphene layers, are a feature of graphitic systems including twisted and folded bilayer graphene, and turbostratic graphite. We present the results of ab initio density functional theory calculations performed to investigate the complexes that are formed from the binding of vacancy defects across neighbouring layers in AA-stacked bilayers. As with AB stacking, the carbon atoms surrounding lattice vacancies can form interlayer structures with sp 2 bonding that are lower in energy than in-plane reconstructions. The sp 2 interlayer bonding of adjacent multivacancy defects in registry creates a type of stable sp 2 bonded 'wormhole' or tunnel defect between the layers. We also identify a new class of 'mezzanine' structure characterised by sp 3 interlayer bonding, resembling a prismatic vacancy loop. The V 6 hexavacancy variant, where six sp 3 carbon atoms sit midway between two carbon layers and bond to both, is substantially more stable than any other vacancy aggregate in AA-stacked layers. Our focus is on vacancy generation and aggregation in the absence of extreme temperatures or intense beams.

Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots.

Density functional calculations are performed for OH-, F- and H-terminated 4H-SiC 10-20 Å diameter clusters to investigate the effect of surface species upon the optical absorption properties. H-termination results in a pronounced size-dependent quantum-confinement in the absorption, whereas F- and OH-terminations exhibit much reduced size dependent absorption due to surface states. Our findings are in good agreement with recent experimental studies, and are able to explain the little explored dual-feature photoluminescence spectra of SiC quantum dots. We propose that along with controlling the size, suitable surface termination is the key for optimizing optical properties of 4H-SiC quantum structures, such as might be exploited in optoelectronics, photovoltaics and biological applications.

On the validity of empirical potentials for simulating radiation damage in graphite: a benchmark.

In this work, the ability of methods based on empirical potentials to simulate the effects of radiation damage in graphite is examined by comparing results for point defects, found using ab initio calculations based on density functional theory (DFT), with those given by two state of the art potentials: the Environment-Dependent Interatomic Potential (EDIP) and the Adaptive Intermolecular Reactive Empirical Bond Order potential (AIREBO). Formation energies for the interstitial, the vacancy and the Stone-Wales (5775) defect are all reasonably close to DFT values. Both EDIP and AIREBO can thus be suitable for the prompt defects in a cascade, for example. Both potentials suffer from arefacts. One is the pinch defect, where two α-atoms adopt a fourfold-coordinated sp(3) configuration, that forms a cross-link between neighbouring graphene sheets. Another, for AIREBO only, is that its ground state vacancy structure is close to the transition state found by DFT for migration. The EDIP fails to reproduce the ground state self-interstitial structure given by DFT, but has nearly the same formation energy. Also, for both potentials, the energy barriers that control diffusion and the evolution of a damage cascade, are not well reproduced. In particular the EDIP gives a barrier to removal of the Stone-Wales defect as 0.9 eV against DFT's 4.5 eV. The suite of defect structures used is provided as supplementary information as a benchmark set for future potentials.

Identification of the structure of the 3107 cm(-1) H-related defect in diamond.

A prominent hydrogen-related infrared absorption peak seen in many types of diamonds at 3107 cm(-1) has been the subject of investigation for many years. It is present in natural type-Ia material and can be introduced by heat-treating synthetic or CVD diamond. Based upon the most recent experimental data, it is thought that the defect giving rise to this vibrational mode is vacancy-related and is likely to contain nitrogen. Using first-principles simulations we present a VN3H model for the originating centre that simultaneously satisfies the different experimental observations including the strain response.

Electric-field control of magnetic order above room temperature.

Controlling magnetism by means of electric fields is a key issue for the future development of low-power spintronics. Progress has been made in the electrical control of magnetic anisotropy, domain structure, spin polarization or critical temperatures. However, the ability to turn on and off robust ferromagnetism at room temperature and above has remained elusive. Here we use ferroelectricity in BaTiO3 crystals to tune the sharp metamagnetic transition temperature of epitaxially grown FeRh films and electrically drive a transition between antiferromagnetic and ferromagnetic order with only a few volts, just above room temperature. The detailed analysis of the data in the light of first-principles calculations indicate that the phenomenon is mediated by both strain and field effects from the BaTiO3. Our results correspond to a magnetoelectric coupling larger than previous reports by at least one order of magnitude and open new perspectives for the use of ferroelectrics in magnetic storage and spintronics.

Extended interplanar linking in graphite formed from vacancy aggregates.

The mechanical and electrical properties of graphite and related materials such as multilayer graphene depend strongly on the presence of defects in the lattice structure, particularly those which create links between adjacent planes. We present findings which suggest the existence of a new type of defect in the graphite or graphene structure which connects adjacent planes through continuous hexagonal sp2 bonding alone and can form through the aggregation of individual vacancy defects. The energetics and kinetics of the formation of this type of defect are investigated with atomistic density functional theory calculations. The resultant structures are then employed to simulate high resolution transmission electron microscopy images, which are compared to recent experimental images of electron irradiation damaged graphite.

The contribution made by lattice vacancies to the Wigner effect in radiation-damaged graphite.

Models for radiation damage in graphite are reviewed and compared, leading to a re-examination of the contribution made by vacancies to annealing processes. A method based on density functional theory, using large supercells with orthorhombic and hexagonal symmetry, is employed to calculate the properties and behaviour of lattice vacancies and displacement defects. It is concluded that annihilation of intimate Frenkel defects marks the onset of recovery in electrical resistivity, which occurs when the temperature exceeds about 160 K. The migration of isolated monovacancies is estimated to have an activation energy of E(a) ≈ 1.1 eV. Coalescence into divacancy defects occurs in several stages, with different barriers at each stage, depending on the path. The formation of pairs ultimately yields up to 8.9 eV energy, which is nearly 1.0 eV more than the formation energy for an isolated monovacancy. Processes resulting in vacancy coalescence and annihilation appear to be responsible for the main Wigner energy release peak in radiation-damaged graphite, occurring at about 475 K.

Hyperfine interactions at nitrogen interstitial defects in diamond.

Diamond has many extreme physical properties and it can be used in a wide range of applications. In particular it is a highly effective particle detection material, where radiation damage is an important consideration. The WAR9 and WAR10 are electron paramagnetic resonance centres seen in irradiated, nitrogen-containing diamond. These S = 1/2 defects have C(2v) and C(1h) symmetry, respectively, and the experimental spectra have been interpreted as arising from nitrogen split-interstitial centres. Based upon the experimental and theoretical understanding of interstitial nitrogen defect structures, the AIMPRO density functional code has been used to assess the assignments for the structures of WAR9 and WAR10. Although the calculated hyperfine interaction tensors are consistent with the measured values for WAR9, the thermal stability renders the assignment problematic. The model for the WAR10 centre yields principal directions of the hyperfine tensor at variance with observation. Alternative models for both centres are discussed in this paper, but no convincing structures have been found.

Ab initio studies of fluorine passivation on the electronic structure of the NV- defect in nanodiamond.

We have investigated using density functional theory the effect of fluorine termination of a (001) diamond surface on the electronic energy levels of an NV- centre buried beneath the surface. We find that, like OH termination, fluorine passivates the surface and reduces the influence of the surface on the electronic properties of the NV- centre. The results have significance for the optical properties of NV- defects in nanodiamonds.

Electronic structure of Zn, Cu and Ni impurities in germanium.

We present a density functional modelling study of Zn, Cu and Ni impurities in hydrogen-terminated germanium clusters. Their electronic structure is investigated in detail, especially their Jahn-Teller instabilities and electrical levels. Interstitial and substitutional defects were considered and the latter were found to be the most stable defect form for nearly all Fermi level positions. Relative formation energies are estimated semi-empirically with the help of the measured formation energy of the single Ge vacancy. We find that while Zn is a double shallow acceptor, Cu and Ni are deep acceptors with levels close to the available experimental data. Donor levels were only found for interstitial Cu and Zn.

A density functional theory study of models for the N3 and OK1 EPR centres in diamond.

The defects observed in natural and synthetic diamonds provide a fingerprint of their differing growth conditions, as well as the thermal and mechanical processes they have experienced. Of the first row elements it is perhaps surprising that little evidence exists for oxygen in the form of distributed point-defects. Paramagnetic centres labelled N3 and OK1 have been assigned to two structural arrangements of pairs of substitutional nitrogen and oxygen, but there is no direct evidence for the involvement of the oxygen. In this paper we present the results of density functional simulations of N-O pairs in diamond, and review them in light of the experimental evidence. We also present analysis for other structures proposed in the literature (Ti-N, Ti-V-N, NV(2) and NVO), and show that none are particularly plausible.

Density functional studies of muonium in nitrogen aggregate containing diamond: the Mu(X) centre.

Diamond has potential as a wide band-gap semiconductor with high intrinsic carrier mobility, thermal conductivity and hardness. Hydrogen is involved in electrically active defects in chemical vapour deposited diamond, and muonium, via muon spin spectroscopy, can provide useful characterization for the configurations adopted by H atoms in a crystalline material. We present the results of a computational investigation into the structure of the Mu(X) centre proposed to be associated with nitrogen aggregates. We find that the propensity of hydrogen or muonium to chemically react with the lattice makes the correlation of Mu(X) with nitrogen aggregates problematic, and suggest alternative structures.

p-type doping of graphene with F4-TCNQ.

We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.

Stability of singly hydrated silanone on silicon quantum dot surfaces: density functional simulations.

A key to understanding the optical characteristics of silicon quantum dots is the role of surface bonded species that introduce states to the band-gap. In particular, oxygen bonded in a silanone configuration is thought to be a source of shifts in emission during oxidation. We report the results of density-functional calculations examining the properties of such surface structures. We find single hydration of a simple, neutral silanone molecule leads to a barrierless conversion into a di-hydroxyl structure, and that similar processes are weakly activated on larger systems. However, we show that charging has a significant impact upon stability, with the attachment of an electron greatly increasing the barrier for converting silanone to di-hydroxyl termination. The relatively stable, negatively-charged silanone structures are predicted to lead to large red-shifts in the onset of optical absorption.

Self-interstitial in germanium.

Low-temperature radiation damage in n- and p-type Ge is strikingly different, reflecting the charge-dependent properties of vacancies and self-interstitials. We find, using density functional theory, that in Ge the interstitial is bistable, preferring a split configuration when neutral and an open cage configuration when positively charged. The split configuration is inert while the cage configuration acts as a double donor. We evaluate the migration energies of the defects and show that the theory is able to explain the principal results of low-temperature electron-irradiation experiments.

E center in silicon has a donor level in the band gap.

It has been an accepted fact for more than 40 years that the E center in Si (the group-V impurity--vacancy pair)--one of the most studied defects in semiconductors--has only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction band. We now demonstrate that it has a second level, situated in the lower half of the band gap at 0.27 eV above the valence band. The existence of this level, having a donor character, is disclosed by a combination of different transient-capacitance techniques and electronic-structure calculations. The finding seriously questions some diffusion-modeling approaches performed in the past.

First-principles study of the diffusion of hydrogen in ZnO.

Zinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than approximately 0.5 eV. This indicates isolated hydrogen is mobile at low temperature and that thermally stable H-related donors must logically be trapped at other defects. We argue this is also true for other oxides where H is a shallow donor.

Importance of quantum tunneling in vacancy-hydrogen complexes in diamond.

Our ab initio calculations of the hyperfine parameters for negatively charged vacancy-hydrogen and nitrogen-vacancy-hydrogen complexes in diamond compare static defect models and models which account for the quantum tunneling behavior of hydrogen. The static models give rise to hyperfine splittings that are inconsistent with the experimental electron paramagnetic resonance data. In contrast, the hyperfine parameters for the quantum dynamical models are in agreement with the experimental observations. We show that the quantum motion of the proton is crucial to the prediction of symmetry and hyperfine constants for two simple defect centers in diamond. Static a priori methods fail for these systems.