Influence of total beam current on HRTEM image resolution in differentially pumped ETEM with nitrogen gas.

Environmental transmission electron microscopy (ETEM) enables the study of catalytic and other reaction processes as they occur with Angstrom-level resolution. The microscope used is a dedicated ETEM (Titan ETEM, FEI Company) with a differential pumping vacuum system and apertures, allowing aberration corrected high-resolution transmission electron microscopy (HRTEM) imaging to be performed with gas pressures up to 20 mbar in the sample area and with significant advantages over membrane-type E-cell holders. The effect on image resolution of varying the nitrogen gas pressure, electron beam current density and total beam current were measured using information limit (Young's fringes) on a standard cross grating sample and from silicon crystal lattice imaging. As expected, increasing gas pressure causes a decrease in HRTEM image resolution. However, the total electron beam current also causes big changes in the image resolution (lower beam current giving better resolution), whereas varying the beam current density has almost no effect on resolution, a result that has not been reported previously. This behavior is seen even with zero-loss filtered imaging, which we believe shows that the drop in resolution is caused by elastic scattering at gas ions created by the incident electron beam. Suitable conditions for acquiring high resolution images in a gas environment are discussed. Lattice images at nitrogen pressures up to 16 mbar are shown, with 0.12 nm information transfer at 4 mbar.

Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy.

This paper describes the microstructure of ohmic contacts to an AlGaN/GaN heterostructure, of interest for high power transistors, and an analysis of V-defects in an InGaN/GaN multi-quantum well (MQW) light-emitting structure. A combination of different transmission electron microscopy (TEM) techniques has been employed, as they provide complementary information. These include bright field and dark field TEM, high-resolution electron microscopy, X-ray mapping, energy filtered TEM and high angle annular dark field. A full determination of the phase distribution in the ohmic contacts was achieved. The onset of low contact resistance was found to correspond with the formation of an interfacial layer containing both TiN and AlN, and of an intermetallic layer containing Al, Ti and Au in contact with it. The MQW structures were capped with a p-type GaN layer, and TEM and ADF studies of the samples show a number of V-defects 100-200 nm apart along the MQW. Each V-defect incorporates a pure edge (b = 1/3 <11-20>) dislocation, which runs through its apex up to the free surface. The defects contain GaN with no InGaN layers, suggesting the V-pits have been filled in by the capping layer.