Electric Field Manipulation of Defects and Schottky Barrier Control inside ZnO Nanowires.

We directly measure the three-dimensional movement of intrinsic point defects driven by applied electric fields inside ZnO nano- and micro-wire metal-semiconductor-metal device structures. Using depth- and spatially resolved cathodoluminescence spectroscopy (CLS) in situ to map the spatial distributions of local defect densities with increasing applied bias, we drive the reversible conversion of metal-ZnO contacts from rectifying to Ohmic and back. These results demonstrate how defect movements systematically determine Ohmic and Schottky barriers to ZnO nano- and microwires and how they can account for the widely reported instability in nanowire transport. Exceeding a characteristic threshold voltage, in situ CLS reveals a current-induced thermal runaway that drives the radial diffusion of defects toward the nanowire free surface, causing VO defects to accumulate at the metal-semiconductor interfaces. In situ post- vs pre-breakdown CLS reveal micrometer-scale wire asperities, which X-ray photoelectron spectroscopy (XPS) finds to have highly oxygen-deficient surface layers that can be attributed to the migration of preexisting VO species. These findings show the importance of in-operando intrinsic point-defect migration during nanoscale electric field measurements in general. This work also demonstrates a novel method for ZnO nanowire refinement and processing.

Oxidation of quantum dots encapsulated in block copolymer micelles as a function of polymer terminal charge.

Most high-quality quantum dots (QDs) are synthesized in the organic phase, and are often coated with polymers for use in aqueous biological environments. QDs can exhibit fluorescence losses during phase transfer, but evaluating underlying mechanisms (e.g., oxidation, surface etching, loss of colloidal stability) can be challenging because of variation in synthesis methods. Here, fluorescence stability of QDs encapsulated in block co-polymer (BCP) micelles was investigated as a function of BCP terminal functionalization (i.e., -OH, -COOH, and -NH2 groups) and synthesis method (i.e., electrohydrodynamic emulsification-mediated selfassembly (EE-SA), sonication, and manual shaking). Fluorescence losses, fluorescence intensity, energy spectra, and surface composition were assessed using spectrofluorometry and cathodoluminescence spectroscopy (CL) with integrated X-ray photoemission spectroscopy (XPS). QDs passivated using charged BCPs exhibited 50-80% lower fluorescence intensity than those displaying neutral groups (e.g., -OH), which CL/XPS revealed to result from oxidation of surface Cd to CdO. Fluorescence losses were higher for processes with slow formation speed, but minimized in the presence of poly(vinyl alcohol) (PVA) surfactant. These data suggest slower BCP aggregation kinetics rather than electrostatic chain repulsion facilitated QD oxidation. Thus, polymer coating method and BCP structure influence QD oxidation during phase transfer and should be selected to maximize fast aggregation kinetics.

Native Point Defect Measurement and Manipulation in ZnO Nanostructures.

This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.

Defect Manipulation To Control ZnO Micro-/Nanowire-Metal Contacts.

Surface states that induce depletion regions are commonly believed to control the transport of charged carriers through semiconductor nanowires. However, direct, localized optical, and electrical measurements of ZnO nanowires show that native point defects inside the nanowire bulk and created at metal-semiconductor interfaces are electrically active and play a dominant role electronically, altering the semiconductor doping, the carrier density along the wire length, and the injection of charge into the wire. We used depth-resolved cathodoluminescence spectroscopy to measure the densities of multiple point defects inside ZnO nanowires, substitutional Cu on Zn sites, zinc vacancy, and oxygen vacancy defects, showing that their densities varied strongly both radially and lengthwise for tapered wires. These defect profiles and their variation with wire diameter produce trap-assisted tunneling and acceptor trapping of free carriers, the balance of which determines the low contact resistivity (2.6 × 10-3 Ω·cm-2) ohmic, Schottky (Φ ≥ 0.35 eV) or blocking nature of Pt contacts to a single nano/microwire. We show how these defects can now be manipulated by ion beam methods and nanowire design, opening new avenues to control nanowire charge injection and transport.

ImmunoFET feasibility in physiological salt environments.

Field-effect transistors (FETs) are solid-state electrical devices featuring current sources, current drains and semiconductor channels through which charge carriers migrate. FETs can be inexpensive, detect analyte without label, exhibit exponential responses to surface potential changes mediated by analyte binding, require limited sample preparation and operate in real time. ImmunoFETs for protein sensing deploy bioaffinity elements on their channels (antibodies), analyte binding to which modulates immunoFET electrical properties. Historically, immunoFETs were assessed infeasible owing to ion shielding in physiological environments. We demonstrate reliable immunoFET sensing of chemokines by relatively ion-impermeable III-nitride immunoHFETs (heterojunction FETs) in physiological buffers. Data show that the specificity of detection follows the specificity of the antibodies used as receptors, allowing us to discriminate between individual highly related protein species (human and murine CXCL9) as well as mixed samples of analytes (native and biotinylated CXCL9). These capabilities demonstrate that immunoHFETs can be feasible, contrary to classical FET-sensing assessment. FET protein sensors may lead to point-of-care diagnostics that are faster and cheaper than immunoassay in clinical, biotechnological and environmental applications.

Detection of clinically relevant levels of protein analyte under physiologic buffer using planar field effect transistors.

Electrochemical detection of protein binding at physiological salt concentration by planar field effect transistor platforms has yet to be documented convincingly. Here we report detection of streptavidin and clinically relevant levels of biotinylated monokine induced by interferon gamma (MIG) at physiological salt concentrations with AlGaN heterojunction field effect transistors (HFETs). The AlGaN HFETs are functionalized with a silane linker and analyte-specific affinity elements. Polarity of sensor responses is as expected from n-type HFETs to negatively and positively charged analytes. Sensitivity of the HFET sensors increases when salt concentration decreases, and the devices also exhibit dose-dependent responses to analyte. Detection of clinically relevant MIG concentrations at physiological salt levels demonstrates the potential for AlGaN devices to be used in development of in vivo biosensors.

Engineering functional protein interfaces for immunologically modified field effect transistor (ImmunoFET) by molecular genetic means.

The attachment and interactions of analyte receptor biomolecules at solid-liquid interfaces are critical to development of hybrid biological-synthetic sensor devices across all size regimes. We use protein engineering approaches to engineer the sensing interface of biochemically modified field effect transistor sensors (BioFET). To date, we have deposited analyte receptor proteins on FET sensing channels by direct adsorption, used self-assembled monolayers to tether receptor proteins to planar FET SiO2 sensing gates and demonstrated interface biochemical function and electrical function of the corresponding sensors. We have also used phage display to identify short peptides that recognize thermally grown SiO2. Our interest in these peptides is as affinity domains that can be inserted as translational fusions into receptor proteins (antibody fragments or other molecules) to drive oriented interaction with FET sensing surfaces. We have also identified single-chain fragment variables (scFvs, antibody fragments) that recognize an analyte of interest as potential sensor receptors. In addition, we have developed a protein engineering technology (scanning circular permutagenesis) that allows us to alter protein topography to manipulate the position of functional domains of the protein relative to the BioFET sensing surface.

Selection and characteristics of peptides that bind thermally grown silicon dioxide films.

Dodecapeptides with affinity for thermally grown silicon dioxide were isolated by phage display. Selectants had high histidine content, though distributions of histidine are distinct from reported silica particle-precipitating peptides. Our peptides will have utility as nanoscale affinity domains when inserted into proteins intended for deposition on thermal oxide surfaces/interfaces in micro/nanodevices.